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ZXTP25040DFHTA

Diodes Incorporated

ZXTP25040DFHTA by Diodes Incorporated

ZXTP25040DFHTA by Diodes Inc. is a PNP BJT transistor with 3 terminals, capable of handling 1.81W power dissipation and 3A collector current. It operates up to 150°C, with a max voltage of 40V for switching applications at a transition frequency of 270MHz in surface-mount configurations.

Median Price

$0.341

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,240 parts In-Stock

1+ parts

$0.950

100+ parts

$0.387

1k+ parts

$0.269

10k+ parts

$0.204

2,240

$0.950

$0.387

$0.269

$0.204

Arrow

USA . 3,000 parts In-Stock

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$0.243

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$0.243

Verical

USA . 3,000 parts In-Stock

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$0.341

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$0.341

Distributors (In-Stock)

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Ozdisan Elektronik

Türkiye . 12,787 parts In-Stock

1+ parts

$0.202

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12,787

$0.202

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Nova Conductors

Japan . 50 parts In-Stock

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$0.256

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50

$0.256

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Sensible Micro Corp

USA . 854,660 parts In-Stock

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854,660

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Bristol Electronics

USA . 89,883 parts In-Stock

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Vyrian

USA . 83,887 parts In-Stock

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Chip Stock

USA . 33,500 parts In-Stock

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33,500

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IBS Electronics

USA . 9,000 parts In-Stock

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$0.217

9,000

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$0.217

Prism Electronics

USA . 3,069 parts In-Stock

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3,069

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Holdelec - ElecDif-Pro

France . 3,000 parts In-Stock

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3,000

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LIBRA Elektronik GmbH

Germany . 3,000 parts In-Stock

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3,000

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Cyclops Electronics Ltd

UK . 2,137 parts In-Stock

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2,137

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,125 parts In-Stock

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NAC Semi

USA . 500 parts In-Stock

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$0.320

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$0.260

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500

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$0.320

$0.260

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Semtec, LLC

USA . 328 parts In-Stock

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328

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Martec Srl

Italy . 90 parts In-Stock

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90

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Semicontronic

India . 84,122 parts In-Stock

1+ parts

$0.146

100+ parts

$0.142

1k+ parts

$0.142

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84,122

$0.146

$0.142

$0.142

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Component Stockers USA

USA . 436,789 parts In-Stock

1+ parts

$0.210

100+ parts

$0.210

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$0.210

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$0.170

436,789

$0.210

$0.210

$0.210

$0.170

Argo Parts USA

USA . 2,037 parts In-Stock

1+ parts

$0.256

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$0.249

2,037

$0.256

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$0.249

Continental Prestige Electronics

USA . 840 parts In-Stock

1+ parts

$0.256

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$0.251

840

$0.256

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$0.251

Aztec Data Supply Inc.

USA . 1,050 parts In-Stock

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$0.440

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$0.440

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Corohmni

South Africa . 161 parts In-Stock

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$0.579

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161

$0.579

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Modulus Dynamics

Lithuania . 10,482 parts In-Stock

1+ parts

$1.432

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$1.432

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$1.432

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10,482

$1.432

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Perfect Parts

USA . 46,906 parts In-Stock

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Eastek

USA . 30,000 parts In-Stock

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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Lixinc

USA . 9,742 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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iodParts Technologies Inc.

India . 3,899 parts In-Stock

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$0.528

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3,899

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$0.528

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Infinite Electronics LLP (Excess)

. 3,005 parts In-Stock

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3,005

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S.R.D Solutions

India . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Overview

Upgrade your power control systems with the ZXTP25040DFHTA by Diodes Incorporated. This high-quality PNP Power Bipolar Junction Transistor offers reliable switching capabilities in a compact, surface-mount package. Whether you're designing industrial equipment or consumer electronics, this transistor's 40V maximum collector-emitter voltage and 3A maximum collector current ensure optimal performance. Trust in Diodes Incorporated's reputation for excellence and innovation, and experience the value and benefits of the ZXTP25040DFHTA in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and reliability for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP polarity is suitable for switching applications, providing efficient and effective performance.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor, making it easier to use in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation.

Surface Mount: YES

Being surface mount compatible allows for easy and compact mounting on circuit boards, saving space and making assembly simpler.

Maximum Power Dissipation (Abs): 1.81 W

The high power dissipation capability allows for the transistor to handle higher loads, making it versatile in various applications.

Nominal Transition Frequency (fT): 270 MHz

The high transition frequency enables fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZXTP25040DFHTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTP25040DFHTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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