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ZXTP25100BFHTA

Diodes Incorporated

ZXTP25100BFHTA by Diodes Incorporated

ZXTP25100BFHTA by Diodes Inc. is a PNP BJT transistor with max. VCE of 100V, IC of 2A, and hFE of 15. Ideal for switching applications due to its high transition frequency of 200MHz and temp rating up to 150°C. Features Gull Wing terminals in a small outline package style for surface mount assembly.

Median Price

$0.950

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,787 parts In-Stock

1+ parts

$0.950

100+ parts

$0.387

1k+ parts

$0.269

10k+ parts

$0.204

7,787

$0.950

$0.387

$0.269

$0.204

Mouser Electronics

USA . 293 parts In-Stock

1+ parts

$0.950

100+ parts

$0.385

1k+ parts

$0.268

10k+ parts

$0.232

293

$0.950

$0.385

$0.268

$0.232

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$1.079

100+ parts

$1.068

1k+ parts

-

10k+ parts

-

5,000

$1.079

$1.068

-

-

Arrow

USA . 21,000 parts In-Stock

1+ parts

-

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$0.185

21,000

-

-

-

$0.185

Verical

USA . 21,000 parts In-Stock

1+ parts

-

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$0.184

21,000

-

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-

$0.184

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.293

100+ parts

-

1k+ parts

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100

$0.293

-

-

-

Component Electronics Inc.

Canada . 6 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

10k+ parts

-

6

$0.770

$0.580

$0.500

-

IBS Electronics

USA . 93,000 parts In-Stock

1+ parts

-

100+ parts

$0.470

1k+ parts

$0.456

10k+ parts

$0.330

93,000

-

$0.470

$0.456

$0.330

NAC Semi

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.312

66,000

-

-

-

$0.312

Vyrian

USA . 19,789 parts In-Stock

1+ parts

-

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19,789

-

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Chip Stock

USA . 7,500 parts In-Stock

1+ parts

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7,500

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ComSIT Distribution GmbH

Germany . 1,190 parts In-Stock

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1,190

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Rebound Electronics

UK . 616 parts In-Stock

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616

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Distributors (Availability)

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Continental Prestige Electronics

USA . 6,447 parts In-Stock

1+ parts

$0.255

100+ parts

-

1k+ parts

-

10k+ parts

$0.250

6,447

$0.255

-

-

$0.250

Argo Parts USA

USA . 4,079 parts In-Stock

1+ parts

$0.255

100+ parts

-

1k+ parts

-

10k+ parts

$0.247

4,079

$0.255

-

-

$0.247

Component Stockers USA

USA . 79,629 parts In-Stock

1+ parts

$0.360

100+ parts

$0.290

1k+ parts

$0.240

10k+ parts

$0.190

79,629

$0.360

$0.290

$0.240

$0.190

Aztec Data Supply Inc.

USA . 387 parts In-Stock

1+ parts

$0.962

100+ parts

-

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-

10k+ parts

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387

$0.962

-

-

-

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.079

100+ parts

$1.068

1k+ parts

$1.025

10k+ parts

-

5,000

$1.079

$1.068

$1.025

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Corohmni

South Africa . 181 parts In-Stock

1+ parts

$1.500

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181

$1.500

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Perfect Parts

USA . 64,230 parts In-Stock

1+ parts

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64,230

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GreenTree Electronics

Israel . 15,000 parts In-Stock

1+ parts

-

100+ parts

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$0.257

15,000

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$0.257

Lixinc

USA . 5,581 parts In-Stock

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5,581

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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iodParts Technologies Inc.

India . 4,112 parts In-Stock

1+ parts

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$0.434

10k+ parts

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4,112

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$0.434

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Kepictronics

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.287

1k+ parts

$0.278

10k+ parts

$0.272

500

-

$0.287

$0.278

$0.272

Overview

Enhance your power management solutions with the ZXTP25100BFHTA by Diodes Incorporated. Known for their superior quality and reliability, Diodes Incorporated delivers top-notch Power Bipolar Junction Transistors like this PNP transistor designed for switching applications. With a maximum collector-emitter voltage of 100V and a peak reflow temperature of 260°C, this transistor offers exceptional performance in a compact package. Trust Diodes Incorporated to provide you with the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and enhances reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Surface Mount: YES

Enables easy and convenient integration onto PCBs for compact designs.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on PCBs.

Terminal Form: GULL WING

Allows for secure and reliable connections on PCBs.

No. of Terminals: 3

Simple and straightforward connection setup.

Package Style (Meter): SMALL OUTLINE

Conserves space on the PCB, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 15

Ensures consistency in amplification of current signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various operating environments.

Maximum Collector-Emitter Voltage: 100 V

Ability to handle higher voltage levels, enhancing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability.

Maximum Collector Current (IC): 2 A

Capable of handling moderate current levels, suitable for many applications.

Terminal Finish: MATTE TIN

Provides corrosion resistance and enhances solderability.

Terminal Position: DUAL

Facilitates easy PCB layout and connections.

Peak Reflow Temperature °C: 260

Suitable for reflow soldering processes.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency for faster switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZXTP25100BFHTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTP25100BFHTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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