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ZXTP2008GTA

Diodes Incorporated

ZXTP2008GTA by Diodes Incorporated

ZXTP2008GTA by Diodes Inc. is a PNP BJT transistor with 30V VCEO, 5.5A IC, and 110MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and operates up to 150°C.

Median Price

$1.350

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 764 parts In-Stock

1+ parts

$1.350

100+ parts

$0.742

1k+ parts

$0.496

10k+ parts

-

764

$1.350

$0.742

$0.496

-

DigiKey

USA . 1,513 parts In-Stock

1+ parts

$1.370

100+ parts

$0.574

1k+ parts

$0.408

10k+ parts

$0.314

1,513

$1.370

$0.574

$0.408

$0.314

Mouser Electronics

USA . 1,048 parts In-Stock

1+ parts

$1.370

100+ parts

$0.574

1k+ parts

$0.407

10k+ parts

-

1,048

$1.370

$0.574

$0.407

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Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$1.508

100+ parts

$1.372

1k+ parts

$1.237

10k+ parts

-

100

$1.508

$1.372

$1.237

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Verical

USA . 114,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.313

10k+ parts

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114,000

-

-

$0.313

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Farnell

UK . 1,356 parts In-Stock

1+ parts

-

100+ parts

$0.425

1k+ parts

$0.340

10k+ parts

$0.320

1,356

-

$0.425

$0.340

$0.320

Element14

Singapore . 1,356 parts In-Stock

1+ parts

-

100+ parts

$0.759

1k+ parts

$0.594

10k+ parts

$0.590

1,356

-

$0.759

$0.594

$0.590

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 78 parts In-Stock

1+ parts

$0.397

100+ parts

-

1k+ parts

-

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78

$0.397

-

-

-

NAC Semi

USA . 125,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.426

10k+ parts

-

125,000

-

-

$0.426

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Vyrian

USA . 20,670 parts In-Stock

1+ parts

-

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20,670

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ComSIT Distribution GmbH

Germany . 5,000 parts In-Stock

1+ parts

-

100+ parts

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5,000

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ComSIT USA

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Sea View Technologies

USA . 1,103 parts In-Stock

1+ parts

-

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1,103

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Bristol Electronics

USA . 1,103 parts In-Stock

1+ parts

-

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1,103

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Euro-Tech

UK . 230 parts In-Stock

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230

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EMSNET

USA . 91 parts In-Stock

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91

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 20,831 parts In-Stock

1+ parts

$0.266

100+ parts

$0.259

1k+ parts

$0.258

10k+ parts

-

20,831

$0.266

$0.259

$0.258

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Ampacity Inc.

Singapore . 20,717 parts In-Stock

1+ parts

$0.266

100+ parts

-

1k+ parts

-

10k+ parts

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20,717

$0.266

-

-

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Corohmni

South Africa . 43 parts In-Stock

1+ parts

$0.305

100+ parts

-

1k+ parts

-

10k+ parts

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43

$0.305

-

-

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$0.397

100+ parts

$0.377

1k+ parts

$0.358

10k+ parts

$0.353

300

$0.397

$0.377

$0.358

$0.353

Argo Parts USA

USA . 986 parts In-Stock

1+ parts

$0.397

100+ parts

-

1k+ parts

-

10k+ parts

$0.385

986

$0.397

-

-

$0.385

Continental Prestige Electronics

USA . 376 parts In-Stock

1+ parts

$0.864

100+ parts

$0.529

1k+ parts

$0.408

10k+ parts

$0.319

376

$0.864

$0.529

$0.408

$0.319

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.508

100+ parts

$1.372

1k+ parts

$1.237

10k+ parts

-

100

$1.508

$1.372

$1.237

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Aztec Data Supply Inc.

USA . 3,782 parts In-Stock

1+ parts

$1.822

100+ parts

-

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3,782

$1.822

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GreenTree Electronics

Israel . 54,000 parts In-Stock

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54,000

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Eastek

USA . 48,000 parts In-Stock

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$0.448

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48,000

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-

$0.448

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QUARKTWIN TECHNOLOGY LTD

USA . 28,203 parts In-Stock

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28,203

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Perfect Parts

USA . 27,231 parts In-Stock

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27,231

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Lixinc

USA . 5,993 parts In-Stock

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5,993

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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2,500

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Metaverse IC Inc.

Canada . 1,000 parts In-Stock

1+ parts

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1,000

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-

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iodParts Technologies Inc.

India . 945 parts In-Stock

1+ parts

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945

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S.R.D Solutions

India . 500 parts In-Stock

1+ parts

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100+ parts

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500

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Overview

Elevate your power management solutions with the ZXTP2008GTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers unparalleled quality and reliability in their Power Bipolar Junction Transistors (BJT). The ZXTP2008GTA offers exceptional value with its PNP configuration, making it perfect for switching applications. With a maximum collector-emitter voltage of 30V and a peak reflow temperature of 260°C, this transistor ensures optimal performance and durability. Upgrade your projects today with the ZXTP2008GTA and experience the difference Diodes Incorporated can make in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic material provides good protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for a variety of switching tasks.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation when used in electronic circuits.

Surface Mount: YES

Allows for easy and efficient PCB mounting, saving space and facilitating automated assembly processes.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this transistor can withstand demanding environments and operate reliably under varying conditions.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low-voltage applications, offering adequate voltage handling capacity for various electronic circuits.

Maximum Collector Current (IC): 5.5 A

Capable of handling moderate current levels, making it suitable for driving various loads in electronic systems.

Nominal Transition Frequency (fT): 110 MHz

High transition frequency allows for fast switching speeds, ensuring efficient operation in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZXTP2008GTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTP2008GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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