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ZXTP2013GTA

Diodes Incorporated

ZXTP2013GTA by Diodes Incorporated

ZXTP2013GTA by Diodes Inc. is a PNP BJT transistor with 100V VCEO, 5A IC, and 3W Ptot. Ideal for switching applications, it has hFE of 15, operates up to 150°C, and comes in a small outline package with Gull Wing terminals.

Median Price

$0.313

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 91 parts In-Stock

1+ parts

$1.370

100+ parts

$0.574

1k+ parts

$0.408

10k+ parts

$0.314

91

$1.370

$0.574

$0.408

$0.314

Verical

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.313

10k+ parts

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27,000

-

-

$0.313

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Arrow

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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$0.227

10k+ parts

$0.211

2,000

-

-

$0.227

$0.211

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

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1,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.397

100+ parts

-

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300

$0.397

-

-

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IBS Electronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.638

10k+ parts

$0.617

13,000

-

-

$0.638

$0.617

Vyrian

USA . 6,613 parts In-Stock

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6,613

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ACDS - Activité Composants Distribution Service

France . 1,921 parts In-Stock

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1,921

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,436 parts In-Stock

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1,436

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

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1,000

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ComSIT Distribution GmbH

Germany . 198 parts In-Stock

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198

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ComSIT USA

USA . 198 parts In-Stock

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198

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,347 parts In-Stock

1+ parts

$0.193

100+ parts

-

1k+ parts

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10k+ parts

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6,347

$0.193

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Argo Parts USA

USA . 2,871 parts In-Stock

1+ parts

$0.397

100+ parts

-

1k+ parts

-

10k+ parts

$0.385

2,871

$0.397

-

-

$0.385

Continental Prestige Electronics

USA . 2,814 parts In-Stock

1+ parts

$0.397

100+ parts

-

1k+ parts

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10k+ parts

$0.389

2,814

$0.397

-

-

$0.389

Corohmni

South Africa . 181 parts In-Stock

1+ parts

$0.919

100+ parts

-

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181

$0.919

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Aztec Data Supply Inc.

USA . 4,510 parts In-Stock

1+ parts

$1.113

100+ parts

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4,510

$1.113

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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12,000

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Lixinc

USA . 6,909 parts In-Stock

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6,909

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Perfect Parts

USA . 4,303 parts In-Stock

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4,303

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Cyclops Electronics Ltd (Excess)

UK . 1,921 parts In-Stock

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1,921

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Eastek

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.460

10k+ parts

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1,000

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-

$0.460

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.389

1k+ parts

$0.377

10k+ parts

$0.369

100

-

$0.389

$0.377

$0.369

Overview

Discover the ZXTP2013GTA by Diodes Incorporated, a top-tier manufacturer of power bipolar junction transistors. This PNP transistor offers unparalleled switching capabilities in a compact rectangular package, making it ideal for a wide range of applications. With a maximum collector-emitter voltage of 100V and a peak reflow temperature of 260°C, this transistor ensures reliable performance even in demanding environments. Trust Diodes Incorporated to deliver quality, efficiency, and value with the ZXTP2013GTA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits and enhances its switching capabilities.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the product easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Surface mount capability enables easy and secure mounting on PCBs, saving space and facilitating assembly.

Maximum Power Dissipation (Abs): 3 W

With a high power dissipation capacity of 3 W, the product can handle demanding applications without overheating.

Maximum Collector-Emitter Voltage: 100 V

High maximum collector-emitter voltage provides a wide range of operating conditions for the transistor.

Nominal Transition Frequency (fT): 125 MHz

High nominal transition frequency of 125 MHz indicates fast switching speeds and high-frequency capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZXTP2013GTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTP2013GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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