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ZXTN25100BFHTA

Diodes Incorporated

ZXTN25100BFHTA by Diodes Incorporated

ZXTN25100BFHTA by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 100V, max. collector current of 3A, and transition frequency of 160MHz. Ideal for switching applications due to its small outline package and high operating temperature range from -55°C to 150°C.

Median Price

$0.244

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 10 parts In-Stock

1+ parts

$0.070

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

-

10

$0.070

$0.070

$0.070

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Mouser Electronics

USA . 11,664 parts In-Stock

1+ parts

$0.950

100+ parts

$0.385

1k+ parts

$0.296

10k+ parts

-

11,664

$0.950

$0.385

$0.296

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DigiKey

USA . 9,693 parts In-Stock

1+ parts

$0.950

100+ parts

$0.387

1k+ parts

$0.269

10k+ parts

$0.204

9,693

$0.950

$0.387

$0.269

$0.204

Verical

USA . 219,000 parts In-Stock

1+ parts

-

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$0.183

219,000

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-

-

$0.183

Future Electronics

Canada . 18,000 parts In-Stock

1+ parts

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$0.194

18,000

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$0.194

Arrow

USA . 16,912 parts In-Stock

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$0.244

10k+ parts

$0.183

16,912

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$0.244

$0.183

Avnet

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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$0.181

3,000

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$0.181

Farnell

UK . 1,663 parts In-Stock

1+ parts

-

100+ parts

$0.278

1k+ parts

$0.198

10k+ parts

$0.194

1,663

-

$0.278

$0.198

$0.194

Element14

Singapore . 1,663 parts In-Stock

1+ parts

-

100+ parts

$0.498

1k+ parts

$0.353

10k+ parts

$0.346

1,663

-

$0.498

$0.353

$0.346

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.255

100+ parts

-

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10

$0.255

-

-

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Maritex

Poland . 5,671 parts In-Stock

1+ parts

$1.433

100+ parts

$0.325

1k+ parts

$0.184

10k+ parts

-

5,671

$1.433

$0.325

$0.184

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Component Electronics Inc.

Canada . 50 parts In-Stock

1+ parts

$1.540

100+ parts

$1.150

1k+ parts

$1.000

10k+ parts

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50

$1.540

$1.150

$1.000

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IBS Electronics

USA . 522,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.358

522,000

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$0.358

Vyrian

USA . 78,370 parts In-Stock

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78,370

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Chip Stock

USA . 30,655 parts In-Stock

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30,655

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NAC Semi

USA . 18,000 parts In-Stock

1+ parts

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$0.332

18,000

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$0.332

Bristol Electronics

USA . 1,590 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.156

10k+ parts

$0.137

1,590

-

$0.317

$0.156

$0.137

Prism Electronics

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Argo Parts USA

USA . 2,315 parts In-Stock

1+ parts

$0.255

100+ parts

-

1k+ parts

-

10k+ parts

$0.247

2,315

$0.255

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-

$0.247

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.255

100+ parts

$0.249

1k+ parts

-

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1,000

$0.255

$0.249

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Corohmni

South Africa . 159 parts In-Stock

1+ parts

$1.379

100+ parts

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159

$1.379

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Metaverse IC Inc.

Canada . 88,800 parts In-Stock

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88,800

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RC Electronics

USA . 74,095 parts In-Stock

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$0.290

1k+ parts

$0.270

10k+ parts

$0.260

74,095

-

$0.290

$0.270

$0.260

Perfect Parts

USA . 44,704 parts In-Stock

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Futuretech Components

Singapore . 30,000 parts In-Stock

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Lixinc

USA . 16,797 parts In-Stock

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iodParts Technologies Inc.

India . 10,240 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,721 parts In-Stock

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5,721

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Continental Prestige Electronics

USA . 3,899 parts In-Stock

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100+ parts

$0.330

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$0.209

10k+ parts

$0.183

3,899

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$0.330

$0.209

$0.183

Kepictronics

USA . 3,530 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Assy Fe

Spain . 1,690 parts In-Stock

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1,690

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Overview

Unleash the power of innovation with the ZXTN25100BFHTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated brings you a high-quality Power Bipolar Junction Transistor that excels in switching applications. With its NPN configuration and small outline package style, this transistor offers exceptional performance and reliability. Whether you're looking to optimize your power management system or enhance your electronic designs, the ZXTN25100BFHTA provides the value and benefits you need to take your projects to the next level. Trust in Diodes Incorporated for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier and switching circuits, offering high efficiency and reliability.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: SWITCHING

Designed for efficient switching applications, suitable for use in power supplies and motor control.

Surface Mount: YES

Allows for easy and compact PCB assembly with surface mount technology.

Package Shape: RECTANGULAR

Space-efficient design for integration into various electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering and enhances mechanical strength of the terminals.

No. of Terminals: 3

Simple 3-terminal setup for basic transistor connections.

Maximum Power Dissipation (Abs): 0.00181 W

Efficient power handling capability for reliable performance.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications.

Minimum DC Current Gain (hFE): 50

Consistent and reliable amplification with a minimum current gain of 50.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for industrial and automotive environments.

Maximum Collector-Emitter Voltage: 100 V

Higher voltage rating provides wider range of applications for the transistor.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Minimum Operating Temperature: -55 °C

Can operate in low temperature environments without impacting performance.

Maximum Collector Current (IC): 3 A

Sufficient current handling capacity for various electronic circuits.

Terminal Finish: MATTE TIN

Corrosion-resistant terminal finish for enhanced durability.

Terminal Position: DUAL

Dual terminal position for flexible PCB mounting options.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reflow during assembly process.

Peak Reflow Temperature °C: 260

Suitable peak reflow temperature for surface mount soldering process.

Nominal Transition Frequency (fT): 160 MHz

High transition frequency for fast switching and signal amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZXTN25100BFHTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTN25100BFHTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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