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ZXTN25100DGTA

Diodes Incorporated

ZXTN25100DGTA by Diodes Incorporated

ZXTN25100DGTA by Diodes Inc. is a NPN BJT transistor with 100V VCE, 3A IC, and 7.3W Ptot. Ideal for switching applications in small outline packages due to its high transition frequency of 175MHz and operating temperature up to 150°C.

Median Price

$0.596

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 2,462 parts In-Stock

1+ parts

$0.596

100+ parts

$0.336

1k+ parts

$0.286

10k+ parts

-

2,462

$0.596

$0.336

$0.286

-

Mouser Electronics

USA . 14,866 parts In-Stock

1+ parts

$0.680

100+ parts

$0.336

1k+ parts

$0.237

10k+ parts

$0.187

14,866

$0.680

$0.336

$0.237

$0.187

DigiKey

USA . 46,153 parts In-Stock

1+ parts

$0.730

100+ parts

$0.336

1k+ parts

$0.242

10k+ parts

$0.188

46,153

$0.730

$0.336

$0.242

$0.188

Newark

USA . 947 parts In-Stock

1+ parts

$1.060

100+ parts

$0.516

1k+ parts

$0.399

10k+ parts

-

947

$1.060

$0.516

$0.399

-

Farnell

UK . 2,462 parts In-Stock

1+ parts

-

100+ parts

$0.328

1k+ parts

$0.258

10k+ parts

$0.252

2,462

-

$0.328

$0.258

$0.252

Arrow

USA . 699 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.201

10k+ parts

-

699

-

-

$0.201

-

Verical

USA . 699 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.314

10k+ parts

-

699

-

-

$0.314

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$0.254

-

-

-

Ozdisan Elektronik

Türkiye . 147 parts In-Stock

1+ parts

$56.010

100+ parts

-

1k+ parts

-

10k+ parts

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147

$56.010

-

-

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Vyrian

USA . 9,602 parts In-Stock

1+ parts

-

100+ parts

-

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9,602

-

-

-

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

-

-

-

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Sensible Micro Corp

USA . 872 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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872

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-

-

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Bristol Electronics

USA . 760 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.156

10k+ parts

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760

-

$0.317

$0.156

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Elcom Components

USA . 104 parts In-Stock

1+ parts

-

100+ parts

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104

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 6,435 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

10k+ parts

$0.249

6,435

$0.254

-

-

$0.249

Argo Parts USA

USA . 1,342 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

10k+ parts

$0.247

1,342

$0.254

-

-

$0.247

Corohmni

South Africa . 10 parts In-Stock

1+ parts

$0.921

100+ parts

-

1k+ parts

-

10k+ parts

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10

$0.921

-

-

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Aztec Data Supply Inc.

USA . 3,266 parts In-Stock

1+ parts

$1.079

100+ parts

-

1k+ parts

-

10k+ parts

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3,266

$1.079

-

-

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Modulus Dynamics

Lithuania . 17,337 parts In-Stock

1+ parts

$1.184

100+ parts

$1.184

1k+ parts

$1.184

10k+ parts

-

17,337

$1.184

$1.184

$1.184

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Perfect Parts

USA . 13,453 parts In-Stock

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13,453

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Lixinc

USA . 5,459 parts In-Stock

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5,459

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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-

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Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.294

10k+ parts

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1,000

-

-

$0.294

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GreenTree Electronics

Israel . 607 parts In-Stock

1+ parts

-

100+ parts

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607

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Overview

Enhance your power management solutions with the ZXTN25100DGTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated brings you a high-quality Power Bipolar Junction Transistor that excels in switching applications. With a maximum collector-emitter voltage of 100V and a peak reflow temperature of 260°C, this NPN transistor offers reliability and efficiency in small outline packaging. Trust in Diodes Incorporated to provide top-notch components for all your power needs. Elevate your projects with the ZXTN25100DGTA today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal conductivity and electrical insulation, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used in switching applications, amplification, and signal processing.

Configuration: SINGLE

Simplifies circuit design and offers ease of integration.

Transistor Application: SWITCHING

Designed specifically for high-speed switching applications, ensuring efficient performance.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and cost.

Package Shape: RECTANGULAR

Optimizes space utilization on the PCB and allows for efficient placement.

Terminal Form: GULL WING

Facilitates easy soldering and improves mechanical strength for reliable connections.

No. of Terminals: 4

Provides necessary connections for the transistor while maintaining a compact form factor.

Maximum Power Dissipation (Abs): 7.3 W

Handles high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and allows for compact and efficient circuit designs.

Minimum DC Current Gain (hFE): 40

Ensures consistent amplification and switching performance for various applications.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage: 100 V

Handles high voltage levels, ensuring reliable operation in different voltage scenarios.

Transistor Element Material: SILICON

Offers good switching characteristics and low leakage currents for efficient performance.

Maximum Collector Current (IC): 3 A

Handles high current levels, making it suitable for power switching applications.

Terminal Finish: MATTE TIN

Provides good solderability and prevents oxidation for reliable connections.

Terminal Position: DUAL

Allows for versatile mounting options and simplifies PCB layout.

Case Connection: COLLECTOR

Offers direct connection to the collector terminal, facilitating easy circuit design.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during assembly processes without damage.

Nominal Transition Frequency (fT): 175 MHz

Allows for high-frequency operation, suitable for switching applications and RF circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZXTN25100DGTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTN25100DGTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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