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ZXTN25040DFLTA

Diodes Incorporated

ZXTN25040DFLTA by Diodes Incorporated

ZXTN25040DFLTA by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 1.5A, and min. DC current gain of 25 hFE. Ideal for switching applications due to its small outline package style and high transition frequency of 190MHz.

Median Price

$0.228

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,673 parts In-Stock

1+ parts

$0.690

100+ parts

$0.272

1k+ parts

$0.186

10k+ parts

$0.156

4,673

$0.690

$0.272

$0.186

$0.156

DigiKey

USA . 12,800 parts In-Stock

1+ parts

$0.730

100+ parts

$0.289

1k+ parts

$0.197

10k+ parts

$0.147

12,800

$0.730

$0.289

$0.197

$0.147

Newark

USA . 590 parts In-Stock

1+ parts

$0.756

100+ parts

$0.338

1k+ parts

$0.306

10k+ parts

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590

$0.756

$0.338

$0.306

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Avnet

USA . 33,000 parts In-Stock

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33,000

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Verical

USA . 27,000 parts In-Stock

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$0.139

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$0.139

Future Electronics

Canada . 6,000 parts In-Stock

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$0.148

6,000

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$0.148

Element14

Singapore . 4,580 parts In-Stock

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100+ parts

$0.260

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$0.178

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4,580

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$0.260

$0.178

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Farnell

UK . 1,160 parts In-Stock

1+ parts

-

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$0.196

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$0.150

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$0.129

1,160

-

$0.196

$0.150

$0.129

Arrow

USA . 1,098 parts In-Stock

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$0.128

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1,098

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$0.128

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Distributors (In-Stock)

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Nova Conductors

Japan . 28 parts In-Stock

1+ parts

$0.172

100+ parts

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28

$0.172

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Ozdisan Elektronik

Türkiye . 12,805 parts In-Stock

1+ parts

$63.851

100+ parts

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12,805

$63.851

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Rutronik

Germany . 18,000 parts In-Stock

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$0.196

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$0.196

Vyrian

USA . 12,595 parts In-Stock

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Chip Stock

USA . 10,698 parts In-Stock

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10,698

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NAC Semi

USA . 6,000 parts In-Stock

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$0.275

6,000

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$0.275

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 4,107 parts In-Stock

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ComSIT Distribution GmbH

Germany . 803 parts In-Stock

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803

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Semicontronic

India . 12,215 parts In-Stock

1+ parts

$0.100

100+ parts

$0.098

1k+ parts

$0.097

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12,215

$0.100

$0.098

$0.097

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.169

100+ parts

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$0.162

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500

$0.169

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$0.162

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Argo Parts USA

USA . 2,646 parts In-Stock

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$0.172

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$0.167

2,646

$0.172

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$0.167

Continental Prestige Electronics

USA . 785 parts In-Stock

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$0.172

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$0.169

785

$0.172

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$0.169

Aztec Data Supply Inc.

USA . 2,863 parts In-Stock

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$1.132

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2,863

$1.132

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Corohmni

South Africa . 274 parts In-Stock

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$1.927

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274

$1.927

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 54,912 parts In-Stock

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Lixinc

USA . 19,380 parts In-Stock

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GreenTree Electronics

Israel . 18,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,182 parts In-Stock

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Glotronic Ltd.

UK . 10,800 parts In-Stock

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iodParts Technologies Inc.

India . 5,850 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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Assy Fe

Spain . 2,950 parts In-Stock

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Overview

Enhance your electronic designs with the ZXTN25040DFLTA from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality and reliability. This power Bipolar Junction Transistor (BJT) is perfect for switching applications, offering customers exceptional value and performance. With its NPN polarity, small outline package style, and high transition frequency of 190 MHz, this transistor is ideal for a wide range of electronic projects. Trust Diodes Incorporated to provide you with the best components for your next design venture.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

Suitable for a wide range of applications, including amplification and switching circuits.

Configuration: SINGLE

Simplified design and easier integration into circuits.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient operation.

Surface Mount: YES

Ease of mounting on PCBs, saving space and simplifying assembly.

Terminal Form: GULL WING

Facilitates easy soldering and strong mechanical connection.

Maximum Power Dissipation (Abs): 0.35 W

Can handle moderate power levels, suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Compact size enables efficient use of space on PCBs.

Minimum DC Current Gain (hFE): 25

Provides consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon offers high performance and reliability in transistor operations.

Maximum Collector Current (IC): 1.5 A

Can handle moderate to high currents, suitable for various applications.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance, ensuring a strong connection.

Terminal Position: DUAL

Facilitates easy PCB layout and connection.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during reflow soldering processes.

Nominal Transition Frequency (fT): 190 MHz

High transition frequency enables fast switching speeds and high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZXTN25040DFLTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTN25040DFLTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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