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ZXTN25012EZTA

Diodes Incorporated

ZXTN25012EZTA by Diodes Incorporated

ZXTN25012EZTA by Diodes Inc. is a NPN BJT transistor with 12V max collector-emitter voltage, 6.5A max collector current, and 19.2W max power dissipation. Ideal for switching applications due to its high transition frequency of 260MHz and small outline package style for surface mount assembly.

Median Price

$0.763

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 361 parts In-Stock

1+ parts

$0.688

100+ parts

$0.354

1k+ parts

$0.252

10k+ parts

$0.227

361

$0.688

$0.354

$0.252

$0.227

Newark

USA . 251 parts In-Stock

1+ parts

$0.763

100+ parts

$0.421

1k+ parts

$0.281

10k+ parts

-

251

$0.763

$0.421

$0.281

-

DigiKey

USA . 32 parts In-Stock

1+ parts

$0.860

100+ parts

$0.347

1k+ parts

$0.239

10k+ parts

$0.179

32

$0.860

$0.347

$0.239

$0.179

Element14

Singapore . 587 parts In-Stock

1+ parts

$1.250

100+ parts

$0.503

1k+ parts

$0.342

10k+ parts

-

587

$1.250

$0.503

$0.342

-

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.163

10k+ parts

-

15,000

-

-

$0.163

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.234

100+ parts

-

1k+ parts

-

10k+ parts

-

550

$0.234

-

-

-

Vyrian

USA . 3,439 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,439

-

-

-

-

Chip Stock

USA . 1,095 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,095

-

-

-

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Prism Electronics

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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9

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,536 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

-

10k+ parts

-

3,536

$0.139

-

-

-

Semicontronic

India . 3,464 parts In-Stock

1+ parts

$0.139

100+ parts

$0.136

1k+ parts

$0.135

10k+ parts

-

3,464

$0.139

$0.136

$0.135

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Continental Prestige Electronics

USA . 6,011 parts In-Stock

1+ parts

$0.234

100+ parts

-

1k+ parts

-

10k+ parts

$0.230

6,011

$0.234

-

-

$0.230

Argo Parts USA

USA . 3,835 parts In-Stock

1+ parts

$0.234

100+ parts

-

1k+ parts

-

10k+ parts

$0.227

3,835

$0.234

-

-

$0.227

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.234

100+ parts

$0.230

1k+ parts

-

10k+ parts

-

1,000

$0.234

$0.230

-

-

Component Stockers USA

USA . 70,103 parts In-Stock

1+ parts

$0.560

100+ parts

$0.330

1k+ parts

$0.160

10k+ parts

$0.160

70,103

$0.560

$0.330

$0.160

$0.160

Corohmni

South Africa . 5 parts In-Stock

1+ parts

$1.459

100+ parts

-

1k+ parts

-

10k+ parts

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5

$1.459

-

-

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Aztec Data Supply Inc.

USA . 261 parts In-Stock

1+ parts

$1.521

100+ parts

-

1k+ parts

-

10k+ parts

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261

$1.521

-

-

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Kepictronics

USA . 27,860 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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27,860

-

-

-

-

Eastek

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.254

10k+ parts

-

8,000

-

-

$0.254

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Perfect Parts

USA . 3,110 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,110

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-

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,000

-

-

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Cyclops Electronics Ltd (Excess)

UK . 589 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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589

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-

-

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Overview

Power up your projects with the ZXTN25012EZTA by Diodes Incorporated. Known for their top-notch quality and reliability, Diodes Incorporated offers power bipolar junction transistors that are perfect for switching applications. This NPN transistor comes in a small outline package, making it easy to integrate into your designs. With a maximum collector-emitter voltage of 12V and a maximum collector current of 6.5A, this transistor delivers exceptional performance. Trust Diodes Incorporated to provide you with the tools you need for success. Upgrade your projects today with the ZXTN25012EZTA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protects the transistor from external elements, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and fast switching speeds.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, making the transistor easy to use in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast turn-on and turn-off times, making it ideal for high-speed circuitry.

Surface Mount: YES

With surface-mount capability, this transistor can be easily mounted on a PCB, saving space and allowing for compact device designs.

Maximum Power Dissipation: 19.2 W

The high power dissipation rating allows the transistor to handle large loads and operate at high power levels without overheating, ensuring reliability.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature makes this transistor suitable for use in various industrial and automotive applications where temperature fluctuations are common.

Maximum Collector-Emitter Voltage: 12 V

The maximum collector-emitter voltage rating of 12V ensures that the transistor can handle high voltages without breakdown, making it versatile for different circuit requirements.

Maximum Collector Current: 6.5 A

With a high collector current rating, this transistor can handle significant current loads, making it suitable for high-power applications.

Nominal Transition Frequency: 260 MHz

The high transition frequency enables this transistor to operate at high frequencies, making it suitable for applications that require fast switching speeds and high bandwidth.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZXTN25012EZTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTN25012EZTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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