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ZXTN2031FTA

Diodes Incorporated

ZXTN2031FTA by Diodes Incorporated

ZXTN2031FTA by Diodes Inc. is a NPN BJT transistor with hFE of 80, Vce of 50V, and Ic of 5A. Ideal for switching applications due to fast ton of 43ns and toff of 512ns. Operates at max temp of 150°C in small outline package suitable for surface mount technology.

Median Price

$0.946

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 15,786 parts In-Stock

1+ parts

$1.210

100+ parts

$0.483

1k+ parts

$0.353

10k+ parts

$0.282

15,786

$1.210

$0.483

$0.353

$0.282

DigiKey

USA . 8,964 parts In-Stock

1+ parts

$1.210

100+ parts

$0.501

1k+ parts

$0.353

10k+ parts

$0.273

8,964

$1.210

$0.501

$0.353

$0.273

Newark

USA . 10,072 parts In-Stock

1+ parts

$1.250

100+ parts

$0.516

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$0.401

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10,072

$1.250

$0.516

$0.401

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Verical

USA . 33,000 parts In-Stock

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$0.479

33,000

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$0.479

Element14

Singapore . 16,939 parts In-Stock

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-

100+ parts

$0.683

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$0.511

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16,939

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$0.683

$0.511

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Farnell

UK . 10,042 parts In-Stock

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-

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$0.419

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$0.330

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$0.300

10,042

-

$0.419

$0.330

$0.300

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.440

100+ parts

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600

$0.440

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TME

Poland . 1,528 parts In-Stock

1+ parts

$0.780

100+ parts

$0.405

1k+ parts

$0.358

10k+ parts

-

1,528

$0.780

$0.405

$0.358

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Vyrian

USA . 154,739 parts In-Stock

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154,739

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Rutronik

Germany . 93,000 parts In-Stock

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$0.388

93,000

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$0.388

Chip Stock

USA . 33,500 parts In-Stock

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33,500

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NAC Semi

USA . 6,000 parts In-Stock

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$0.400

6,000

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$0.400

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

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$0.407

3,000

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$0.407

Bristol Electronics

USA . 1,891 parts In-Stock

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1,891

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Atlantic Semiconductor

USA . 1,891 parts In-Stock

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Prism Electronics

USA . 18 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 153,046 parts In-Stock

1+ parts

$0.221

100+ parts

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153,046

$0.221

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Semicontronic

India . 148,963 parts In-Stock

1+ parts

$0.221

100+ parts

$0.215

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$0.214

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148,963

$0.221

$0.215

$0.214

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.440

100+ parts

$0.431

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2,000

$0.440

$0.431

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Argo Parts USA

USA . 1,707 parts In-Stock

1+ parts

$0.440

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$0.426

1,707

$0.440

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$0.426

Corohmni

South Africa . 134 parts In-Stock

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$0.554

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134

$0.554

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Continental Prestige Electronics

USA . 11,557 parts In-Stock

1+ parts

$0.834

100+ parts

$0.489

1k+ parts

$0.311

10k+ parts

$0.275

11,557

$0.834

$0.489

$0.311

$0.275

Aztec Data Supply Inc.

USA . 1,923 parts In-Stock

1+ parts

$1.237

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$1.237

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Perfect Parts

USA . 93,155 parts In-Stock

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Glotronic Ltd.

UK . 79,050 parts In-Stock

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Eastek

USA . 69,000 parts In-Stock

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iodParts Technologies Inc.

India . 31,075 parts In-Stock

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$0.482

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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Robosynatics

Brazil . 4,377 parts In-Stock

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$1.814

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$1.777

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$1.777

4,377

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$1.814

$1.777

$1.777

Lucentia Tech

USA . 4,377 parts In-Stock

1+ parts

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100+ parts

$1.814

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$1.777

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$1.777

4,377

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$1.814

$1.777

$1.777

Lixinc

USA . 3,112 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 1,303 parts In-Stock

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1,303

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Unlock the power of cutting-edge technology with the ZXTN2031FTA by Diodes Incorporated. This high-quality Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability, making it the go-to choice for switching applications. With its NPN configuration and maximum collector current of 5A, this transistor delivers superior efficiency and precision. Trust in Diodes Incorporated's expertise in semiconductor manufacturing to provide you with a product that exceeds expectations. Elevate your projects with the ZXTN2031FTA and experience unmatched value and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for the housing of the transistor.

Polarity or Channel Type: NPN

Common bipolar junction transistor type used in a variety of electronic applications.

Transistor Application: SWITCHING

Suitable for applications that require fast switching speeds.

Surface Mount: YES

Easy to mount on PCBs, saving space and facilitating automated assembly.

Minimum DC Current Gain (hFE): 80

Ensures efficient amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

Provides a high voltage rating for the transistor for safe operation.

Maximum Collector Current (IC): 5 A

Allows for handling of relatively high current levels in the circuit.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency enables operation at higher frequencies.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTN2031FTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

512 ns

Maximum Turn On Time (ton):

43 ns

Trade Compliance

ZXTN2031FTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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