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ZXTN2018FTA

Diodes Incorporated

ZXTN2018FTA by Diodes Incorporated

ZXTN2018FTA by Diodes Inc. is a NPN BJT transistor with max. 60V VCE, 5A IC, and 130MHz fT. Ideal for switching applications due to its single configuration and small outline package style. Features Gull Wing terminals, matte tin finish, and can operate up to 150°C peak reflow temp.

Median Price

$0.414

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 101,960 parts In-Stock

1+ parts

$0.560

100+ parts

$0.336

1k+ parts

$0.263

10k+ parts

$0.263

101,960

$0.560

$0.336

$0.263

$0.263

Mouser Electronics

USA . 18,909 parts In-Stock

1+ parts

$0.560

100+ parts

$0.329

1k+ parts

$0.263

10k+ parts

$0.262

18,909

$0.560

$0.329

$0.263

$0.262

Avnet

USA . 6,000 parts In-Stock

1+ parts

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6,000

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Arrow

USA . 2,394 parts In-Stock

1+ parts

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$0.269

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2,394

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$0.269

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Verical

USA . 2,394 parts In-Stock

1+ parts

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100+ parts

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$0.269

10k+ parts

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2,394

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$0.269

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

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$0.374

24,000

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$0.374

ACDS - Activité Composants Distribution Service

France . 1,859 parts In-Stock

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1,859

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Semi Source

USA . 199 parts In-Stock

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199

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Distributors (Availability)

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Perfect Parts

USA . 61,036 parts In-Stock

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61,036

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Lixinc

USA . 8,727 parts In-Stock

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8,727

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iodParts Technologies Inc.

India . 7,095 parts In-Stock

1+ parts

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100+ parts

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$0.903

10k+ parts

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7,095

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$0.903

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Cyclops Electronics Ltd (Excess)

UK . 1,859 parts In-Stock

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1,859

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Overview

Enhance your electronic projects with the ZXTN2018FTA by Diodes Incorporated! This Small Signal Bipolar Junction Transistor (BJT) offers high-quality performance and reliability, perfect for switching applications. With a maximum collector-emitter voltage of 60V and a maximum collector current of 5A, this NPN transistor provides efficient operation at a wide temperature range. Its compact design and surface-mount capability make it ideal for various projects where space is limited. Trust in Diodes Incorporated's reputation for excellence and innovation, and experience the value and benefits that the ZXTN2018FTA brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Suitable for various switching applications in electronic circuits.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed for efficient switching operations.

Surface Mount: YES

Allows for easy and direct mounting on PCBs.

Package Shape: RECTANGULAR

Facilitates space-saving and efficient PCB layout.

Terminal Form: GULL WING

Offers secure and reliable connections on the PCB.

No. of Terminals: 3

Simple and straightforward interface for circuit connections.

Package Style (Meter): SMALL OUTLINE

Compact and suitable for applications with limited space.

Minimum DC Current Gain (hFE): 15

Ensures consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments for reliable operation.

Maximum Collector-Emitter Voltage: 60 V

Suitable for a wide range of voltage applications.

Transistor Element Material: SILICON

Provides good amplification and switching characteristics.

Maximum Collector Current (IC): 5 A

Capable of handling high current applications.

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and solderability.

Terminal Position: DUAL

Allows for flexibility in circuit connections.

Maximum Time At Peak Reflow Temperature (s): 30

Provides a suitable reflow profile for manufacturing processes.

Peak Reflow Temperature °C: 260

Meets industry standards for soldering processes.

Nominal Transition Frequency (fT): 130 MHz

Suitable for high-frequency applications requiring fast switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTN2018FTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTN2018FTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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