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ZXTN2010ASTZ

Diodes Incorporated

ZXTN2010ASTZ by Diodes Incorporated

ZXTN2010ASTZ by Diodes Inc. is a NPN BJT transistor with hFE of 20, VCE of 60V, and IC of 4.5A. Ideal for switching applications, it operates up to 150°C with fT of 130MHz in a plastic package with matte tin finish and wire terminals.

Median Price

$1.347

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$1.174

100+ parts

$1.068

1k+ parts

$0.963

10k+ parts

-

350

$1.174

$1.068

$0.963

-

Mouser Electronics

USA . 2,378 parts In-Stock

1+ parts

$1.520

100+ parts

$0.640

1k+ parts

$0.458

10k+ parts

$0.374

2,378

$1.520

$0.640

$0.458

$0.374

DigiKey

USA . 1,938 parts In-Stock

1+ parts

$1.520

100+ parts

$0.641

1k+ parts

$0.458

10k+ parts

$0.360

1,938

$1.520

$0.641

$0.458

$0.360

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$0.360

8,000

-

-

-

$0.360

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 8,000 parts In-Stock

1+ parts

-

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8,000

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Vyrian

USA . 4,712 parts In-Stock

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4,712

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,590 parts In-Stock

1+ parts

$0.306

100+ parts

-

1k+ parts

-

10k+ parts

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4,590

$0.306

-

-

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Corohmni

South Africa . 34 parts In-Stock

1+ parts

$0.493

100+ parts

-

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34

$0.493

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Aztec Data Supply Inc.

USA . 4,704 parts In-Stock

1+ parts

$0.647

100+ parts

-

1k+ parts

-

10k+ parts

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4,704

$0.647

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.174

100+ parts

$1.068

1k+ parts

$0.963

10k+ parts

-

350

$1.174

$1.068

$0.963

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iodParts Technologies Inc.

India . 8,000 parts In-Stock

1+ parts

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100+ parts

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8,000

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Perfect Parts

USA . 6,336 parts In-Stock

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6,336

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Continental Prestige Electronics

USA . 3,949 parts In-Stock

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3,949

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Argo Parts USA

USA . 2,114 parts In-Stock

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2,114

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Enhance your electronic projects with the ZXTN2010ASTZ by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a maximum collector-emitter voltage of 60V and a peak reflow temperature of 260°C. With a minimum DC current gain of 20 and a maximum collector current of 4.5A, this NPN transistor provides exceptional performance. Trust Diodes Incorporated to deliver cutting-edge technology that surpasses expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and low cost, making it a good choice for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile and suitable for various projects.

Configuration: SINGLE

The single configuration simplifies design and increases reliability, making it a preferred choice for many applications.

Transistor Application: SWITCHING

With a designated switching application, this transistor is optimized for fast switching speeds and low power consumption.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and compact circuit design, making this transistor versatile in various applications.

Terminal Form: WIRE

The wire terminal form allows for easy soldering and connection, ensuring a secure and reliable electrical connection.

No. of Terminals: 3

The 3 terminals provide the necessary connections for different circuit configurations, making this transistor flexible for various applications.

Package Style (Meter): IN-LINE

The in-line package style provides a compact and space-saving design, making it suitable for applications with limited space constraints.

Minimum DC Current Gain (hFE): 20

With a minimum DC current gain of 20, this transistor ensures reliable amplification and signal processing in different circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature makes this transistor suitable for applications where temperature fluctuations may occur.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60V, this transistor can handle higher voltages, making it suitable for various power applications.

Transistor Element Material: SILICON

Silicon transistors offer good performance and reliability, making this transistor a preferred choice for many electronic circuits.

Maximum Collector Current (IC): 4.5 A

With a maximum collector current of 4.5A, this transistor can handle higher current loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures good solderability, making it suitable for demanding environments.

Terminal Position: SINGLE

The single terminal position simplifies connections and ensures proper alignment, enhancing the reliability of the transistor in circuit applications.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and connection reliability, making this transistor suitable for different assembly processes.

Nominal Transition Frequency (fT): 130 MHz

With a nominal transition frequency of 130MHz, this transistor offers fast signal processing, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTN2010ASTZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTN2010ASTZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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