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ZXTN07045EFFTA

Diodes Incorporated

ZXTN07045EFFTA by Diodes Incorporated

ZXTN07045EFFTA by Diodes Inc. is a NPN BJT transistor with 45V VCEO, 4A IC, and 2W Ptot. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 190MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

Median Price

$0.866

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 103 parts In-Stock

1+ parts

$0.801

100+ parts

$0.316

1k+ parts

$0.224

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$0.193

103

$0.801

$0.316

$0.224

$0.193

DigiKey

USA . 12,179 parts In-Stock

1+ parts

$0.930

100+ parts

$0.375

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$0.260

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$0.197

12,179

$0.930

$0.375

$0.260

$0.197

Mouser Electronics

USA . 4,576 parts In-Stock

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$0.930

100+ parts

$0.375

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$0.288

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4,576

$0.930

$0.375

$0.288

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Element14

Singapore . 103 parts In-Stock

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$1.360

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$0.532

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$0.370

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103

$1.360

$0.532

$0.370

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Verical

USA . 264,000 parts In-Stock

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$0.180

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Avnet

USA . 21,000 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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$0.180

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$0.180

Distributors (In-Stock)

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Nova Conductors

Japan . 28 parts In-Stock

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$0.256

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28

$0.256

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NAC Semi

USA . 102,000 parts In-Stock

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$0.426

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$0.426

Vyrian

USA . 47,616 parts In-Stock

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Semi Source

USA . 26,700 parts In-Stock

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26,700

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IBS Electronics

USA . 15,000 parts In-Stock

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$0.166

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$0.166

Sensible Micro Corp

USA . 5,236 parts In-Stock

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Sea View Technologies

USA . 2,314 parts In-Stock

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2,314

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Bristol Electronics

USA . 2,314 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,100 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,986 parts In-Stock

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1,986

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 9 parts In-Stock

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Prism Electronics

USA . 7 parts In-Stock

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Ampacity Inc.

Singapore . 47,901 parts In-Stock

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$0.153

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$0.153

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Semicontronic

India . 46,974 parts In-Stock

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$0.153

100+ parts

$0.149

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$0.148

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46,974

$0.153

$0.149

$0.148

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Continental Prestige Electronics

USA . 6,250 parts In-Stock

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$0.256

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$0.251

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$0.256

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$0.251

Argo Parts USA

USA . 2,441 parts In-Stock

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$0.256

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$0.248

2,441

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$0.248

Netroflash

USA . 2,000 parts In-Stock

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$0.256

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$0.243

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$0.238

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$0.256

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$0.238

Corohmni

South Africa . 118 parts In-Stock

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$0.259

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118

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Eastek

USA . 69,000 parts In-Stock

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GreenTree Electronics

Israel . 54,000 parts In-Stock

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Kepictronics

USA . 33,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,263 parts In-Stock

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Lixinc

USA . 10,047 parts In-Stock

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Perfect Parts

USA . 6,523 parts In-Stock

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iodParts Technologies Inc.

India . 4,118 parts In-Stock

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$0.329

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Overview

Enhance your electronic projects with the ZXTN07045EFFTA from Diodes Incorporated, a leading manufacturer known for top-quality components. This NPN small signal bipolar junction transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 45V and a maximum collector current of 4A. With a minimum DC current gain of 70 and a maximum operating temperature of 150°C, this transistor ensures reliable performance in various scenarios. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs, providing value and efficiency for your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing versatile functionality.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient performance.

Surface Mount: YES

Surface mount capability allows for easy and efficient soldering onto circuit boards, saving time during assembly.

Maximum Power Dissipation (Abs): 2 W

With a high power dissipation capacity of 2W, this transistor can handle relatively high power loads without overheating.

Minimum DC Current Gain (hFE): 70

Having a minimum DC current gain of 70 ensures reliable and consistent amplification of signals in a circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments and maintain performance.

Maximum Collector-Emitter Voltage: 45 V

The maximum collector-emitter voltage of 45V allows for efficient control of higher voltage circuits.

Transistor Element Material: SILICON

Silicon material ensures high reliability and performance, making this transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4A, this transistor can handle moderate to high current loads in circuits.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and conductivity, enhancing the performance and reliability of the transistor.

Nominal Transition Frequency (fT): 190 MHz

The high nominal transition frequency of 190MHz enables fast response times and efficient switching capabilities in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTN07045EFFTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTN07045EFFTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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