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ZXTN19060CFFTA

Diodes Incorporated

ZXTN19060CFFTA by Diodes Incorporated

ZXTN19060CFFTA by Diodes Inc. is a NPN BJT transistor with 60V VCEO, 5.5A IC, and 130MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low turn-on/off times. Its compact package style and surface-mount capability make it suitable for space-constrained designs.

Median Price

$0.940

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,408 parts In-Stock

1+ parts

$0.940

100+ parts

$0.443

1k+ parts

$0.318

10k+ parts

$0.276

5,408

$0.940

$0.443

$0.318

$0.276

Adafruit Industries

USA . 85 parts In-Stock

1+ parts

$1.073

100+ parts

$0.976

1k+ parts

$0.880

10k+ parts

-

85

$1.073

$0.976

$0.880

-

DigiKey

USA . 6,301 parts In-Stock

1+ parts

$1.170

100+ parts

$0.482

1k+ parts

$0.338

10k+ parts

$0.259

6,301

$1.170

$0.482

$0.338

$0.259

Arrow

USA . 2,935 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.288

10k+ parts

$0.222

2,935

-

-

$0.288

$0.222

Verical

USA . 2,935 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.392

10k+ parts

-

2,935

-

-

$0.392

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 120,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.185

120,000

-

-

-

$0.185

NAC Semi

USA . 108,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.242

108,000

-

-

-

$0.242

Chip Stock

USA . 18,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,500

-

-

-

-

ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Semtec, LLC

USA . 785 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

785

-

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

350

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 32,043 parts In-Stock

1+ parts

$0.360

100+ parts

$0.290

1k+ parts

$0.260

10k+ parts

$0.200

32,043

$0.360

$0.290

$0.260

$0.200

Advanced Electronics

New Zealand . 85 parts In-Stock

1+ parts

$1.073

100+ parts

$0.976

1k+ parts

$0.880

10k+ parts

-

85

$1.073

$0.976

$0.880

-

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90,000

-

-

-

-

Perfect Parts

USA . 38,080 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

38,080

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 19,961 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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19,961

-

-

-

-

Kepictronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,000

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

-

-

-

-

Cyclops Electronics Ltd (Excess)

UK . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Glotronic Ltd.

UK . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,600

-

-

-

-

Overview

Experience superior performance and reliability with the ZXTN19060CFFTA by Diodes Incorporated. As a leading manufacturer of high-quality Small Signal Bipolar Junction Transistors (BJTs), Diodes Incorporated delivers exceptional products for a wide range of applications. The ZXTN19060CFFTA offers customers unparalleled value, benefits, and advantages, making it the ideal choice for your electronic needs. Trust in Diodes Incorporated to provide you with top-notch quality and innovation in every product they offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration with other NPN transistors in a circuit, enhancing compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in applications.

Surface Mount: YES

The surface mount capability enables easy installation and soldering onto PCBs, facilitating manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on the PCB and facilitates placement in compact electronic devices.

Terminal Form: FLAT

The flat terminal form ensures secure connections and allows for easy soldering during assembly.

No. of Terminals: 3

The three terminals provide essential connections for base, emitter, and collector, enabling proper functioning within a circuit.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high power levels without overheating, ensuring reliability in operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for efficient heat dissipation.

Minimum DC Current Gain (hFE): 30

The minimum DC current gain of 30 ensures consistent and reliable amplification of current in the transistor.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, expanding its range of applications.

Maximum Collector-Emitter Voltage: 60 V

The maximum collector-emitter voltage of 60V allows for safe operation within specified voltage limits, ensuring longevity and reliability.

Transistor Element Material: SILICON

The use of silicon material for the transistor element ensures high performance, reliability, and efficiency in electronic circuits.

Maximum Turn On Time (ton): 40.5 ns

The fast turn-on time of 40.5ns allows for quick response to input signals, enhancing the overall performance of the transistor.

Maximum Collector Current (IC): 5.5 A

With a maximum collector current of 5.5A, this transistor can handle high current loads, making it suitable for power applications.

Maximum Turn Off Time (toff): 159.1 ns

The fast turn-off time of 159.1ns ensures efficient switching performance, reducing power losses and improving overall efficiency.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and ensures reliable electrical connections for extended product lifespan.

Terminal Position: DUAL

The dual terminal position allows for easy connection to external components, simplifying circuit design and assembly.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and bonding during manufacturing processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C facilitates reliable soldering and ensures stable connections during assembly.

Nominal Transition Frequency (fT): 130 MHz

With a nominal transition frequency of 130MHz, this transistor can operate at high frequencies, making it suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTN19060CFFTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

159.1 ns

Maximum Turn On Time (ton):

40.5 ns

Trade Compliance

ZXTN19060CFFTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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