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ZXTN19100CFFTA

Diodes Incorporated

ZXTN19100CFFTA by Diodes Incorporated

ZXTN19100CFFTA by Diodes Inc. is a NPN BJT transistor with max 100V VCE, 4.5A IC, and 150MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and -55°C to 150°C operating temp range.

Median Price

$0.884

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 13,201 parts In-Stock

1+ parts

$1.110

100+ parts

$0.454

1k+ parts

$0.319

10k+ parts

$0.245

13,201

$1.110

$0.454

$0.319

$0.245

Newark

USA . 1,748 parts In-Stock

1+ parts

$1.140

100+ parts

$0.469

1k+ parts

$0.329

10k+ parts

-

1,748

$1.140

$0.469

$0.329

-

Mouser Electronics

USA . 19,490 parts In-Stock

1+ parts

$1.280

100+ parts

$0.523

1k+ parts

$0.351

10k+ parts

$0.273

19,490

$1.280

$0.523

$0.351

$0.273

Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$1.789

100+ parts

$1.628

1k+ parts

$1.467

10k+ parts

-

2,000

$1.789

$1.628

$1.467

-

Arrow

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.206

24,000

-

-

-

$0.206

Verical

USA . 18,000 parts In-Stock

1+ parts

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$0.229

18,000

-

-

-

$0.229

Farnell

UK . 2,489 parts In-Stock

1+ parts

-

100+ parts

$0.386

1k+ parts

$0.298

10k+ parts

$0.270

2,489

-

$0.386

$0.298

$0.270

Element14

Singapore . 2,489 parts In-Stock

1+ parts

-

100+ parts

$0.659

1k+ parts

$0.462

10k+ parts

$0.456

2,489

-

$0.659

$0.462

$0.456

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 52 parts In-Stock

1+ parts

$0.314

100+ parts

-

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-

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52

$0.314

-

-

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TME

Poland . 2,805 parts In-Stock

1+ parts

$1.030

100+ parts

$0.447

1k+ parts

$0.308

10k+ parts

$0.294

2,805

$1.030

$0.447

$0.308

$0.294

Vyrian

USA . 113,857 parts In-Stock

1+ parts

-

100+ parts

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113,857

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Connect4Technologies Inc.

Canada . 52,115 parts In-Stock

1+ parts

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52,115

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IBS Electronics

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.229

33,000

-

-

-

$0.229

NAC Semi

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.369

27,000

-

-

-

$0.369

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,310 parts In-Stock

1+ parts

-

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2,310

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Bristol Electronics

USA . 1,865 parts In-Stock

1+ parts

-

100+ parts

$0.414

1k+ parts

$0.178

10k+ parts

-

1,865

-

$0.414

$0.178

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Speed Components Ltd

Israel . 80 parts In-Stock

1+ parts

-

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80

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NPI Materials, Inc.

USA . 46 parts In-Stock

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46

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,804 parts In-Stock

1+ parts

$0.314

100+ parts

-

1k+ parts

-

10k+ parts

$0.304

3,804

$0.314

-

-

$0.304

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$0.314

100+ parts

$0.298

1k+ parts

$0.283

10k+ parts

$0.279

300

$0.314

$0.298

$0.283

$0.279

Aztec Data Supply Inc.

USA . 219 parts In-Stock

1+ parts

$1.081

100+ parts

-

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219

$1.081

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Corohmni

South Africa . 11 parts In-Stock

1+ parts

$1.256

100+ parts

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11

$1.256

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.789

100+ parts

$1.628

1k+ parts

$1.467

10k+ parts

-

2,000

$1.789

$1.628

$1.467

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Eastek

USA . 222,000 parts In-Stock

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222,000

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 39,732 parts In-Stock

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39,732

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Kepictronics

USA . 33,000 parts In-Stock

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33,000

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QUARKTWIN TECHNOLOGY LTD

USA . 17,897 parts In-Stock

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17,897

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Lixinc

USA . 5,818 parts In-Stock

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5,818

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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iodParts Technologies Inc.

India . 1,386 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.300

10k+ parts

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1,386

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-

$0.300

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Continental Prestige Electronics

USA . 1,193 parts In-Stock

1+ parts

-

100+ parts

$0.406

1k+ parts

$0.257

10k+ parts

$0.224

1,193

-

$0.406

$0.257

$0.224

Overview

Enhance your electronic designs with the ZXTN19100CFFTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality small signal bipolar junction transistors that are perfect for switching applications. With a maximum collector-emitter voltage of 100V and a peak transition frequency of 150MHz, this NPN transistor offers reliability and efficiency. Whether you're working on consumer electronics, automotive systems, or industrial equipment, the ZXTN19100CFFTA provides the performance and value you need to bring your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a durable and lightweight construction for the transistor, making it ideal for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for high current amplification and switching capabilities, making this transistor versatile in its use.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, enhancing ease of use for electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance.

Surface Mount: YES

With surface mount capabilities, this transistor is easy to install and suitable for compact electronic designs.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and secure mounting on circuit boards.

Terminal Form: FLAT

The flat terminals provide a stable connection for reliable performance in various electronic systems.

No. of Terminals: 3

With three terminals, this transistor is easy to connect and integrate into electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards and allows for efficient layout of components.

Minimum DC Current Gain (hFE): 25

The minimum DC current gain ensures stable and consistent amplification in a variety of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage allows for robust operation in demanding electronic systems.

Transistor Element Material: SILICON

The silicon element material provides excellent conductivity and reliability for enhanced performance.

Maximum Turn On Time (ton): 51.9 ns

The fast turn-on time ensures quick response and efficient switching capabilities for time-sensitive applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for reliable performance in cold environments.

Maximum Collector Current (IC): 4.5 A

The high maximum collector current enables the transistor to handle heavy loads with ease.

Maximum Turn Off Time (toff): 1095 ns

The extended turn-off time allows for controlled switching and reduced power loss in applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable and corrosion-resistant connection for long-term use.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and facilitates easy installation.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure soldering during assembly processes for reliable connections.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, this transistor meets automotive industry requirements for quality and reliability.

Nominal Transition Frequency (fT): 150 MHz

With a high nominal transition frequency, this transistor is capable of handling high-frequency signals with precision.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTN19100CFFTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1095 ns

Maximum Turn On Time (ton):

51.9 ns

Trade Compliance

ZXTN19100CFFTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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