Loading...

DMN53D0LQ-7

Diodes Incorporated

DMN53D0LQ-7 by Diodes Incorporated

DMN53D0LQ-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode. With a max ID of 0.5A and RDS(on) of 1.6 ohm, it offers reliable performance in small outline packages.

Median Price

$0.115

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 23,925 parts In-Stock

1+ parts

$0.438

100+ parts

$0.166

1k+ parts

$0.108

10k+ parts

-

23,925

$0.438

$0.166

$0.108

-

Verical

USA . 3,405,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.036

3,405,000

-

-

-

$0.036

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.033

6,000

-

-

-

$0.033

Element14

Singapore . 2,965 parts In-Stock

1+ parts

-

100+ parts

$0.165

1k+ parts

$0.108

10k+ parts

$0.106

2,965

-

$0.165

$0.108

$0.106

Farnell

UK . 20 parts In-Stock

1+ parts

-

100+ parts

$0.115

1k+ parts

$0.088

10k+ parts

$0.078

20

-

$0.115

$0.088

$0.078

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.080

-

-

-

Maritex

Poland . 11 parts In-Stock

1+ parts

$0.225

100+ parts

$0.053

1k+ parts

$0.040

10k+ parts

-

11

$0.225

$0.053

$0.040

-

TME

Poland . 1 parts In-Stock

1+ parts

$0.260

100+ parts

$0.114

1k+ parts

$0.069

10k+ parts

$0.049

1

$0.260

$0.114

$0.069

$0.049

Vyrian

USA . 405,285 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

405,285

-

-

-

-

Chip Stock

USA . 91,320 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

91,320

-

-

-

-

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

6,000

-

-

-

$0.049

IBS Electronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.101

4,000

-

-

-

$0.101

Prism Electronics

USA . 116 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

116

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 454,560 parts In-Stock

1+ parts

$0.028

100+ parts

$0.027

1k+ parts

$0.027

10k+ parts

-

454,560

$0.028

$0.027

$0.027

-

Ampacity Inc.

Singapore . 404,486 parts In-Stock

1+ parts

$0.028

100+ parts

-

1k+ parts

-

10k+ parts

-

404,486

$0.028

-

-

-

Argo Parts USA

USA . 4,779 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

$0.075

4,779

$0.078

-

-

$0.075

Corohmni

South Africa . 11 parts In-Stock

1+ parts

$1.041

100+ parts

-

1k+ parts

-

10k+ parts

-

11

$1.041

-

-

-

Aztec Data Supply Inc.

USA . 5,685 parts In-Stock

1+ parts

$1.160

100+ parts

-

1k+ parts

-

10k+ parts

-

5,685

$1.160

-

-

-

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$1.234

100+ parts

$1.172

1k+ parts

$1.172

10k+ parts

-

200

$1.234

$1.172

$1.172

-

Modulus Dynamics

Lithuania . 13,524 parts In-Stock

1+ parts

$1.842

100+ parts

$1.842

1k+ parts

$1.842

10k+ parts

-

13,524

$1.842

$1.842

$1.842

-

Infinite Electronics LLP (Excess)

. 82,882 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

82,882

-

-

-

-

Lixinc

USA . 18,989 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,989

-

-

-

-

Robosynatics

Brazil . 17,125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,125

-

-

-

-

Lucentia Tech

USA . 17,125 parts In-Stock

1+ parts

-

100+ parts

$1.523

1k+ parts

$1.492

10k+ parts

$1.492

17,125

-

$1.523

$1.492

$1.492

Futuretech Components

Singapore . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

GreenTree Electronics

Israel . 8,943 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,943

-

-

-

-

Formix International (Excess)

India . 6,570 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,570

-

-

-

-

Continental Prestige Electronics

USA . 4,545 parts In-Stock

1+ parts

-

100+ parts

$0.137

1k+ parts

$0.061

10k+ parts

$0.040

4,545

-

$0.137

$0.061

$0.040

Kepictronics

USA . 3,199 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,199

-

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.078

1k+ parts

$0.076

10k+ parts

$0.074

100

-

$0.078

$0.076

$0.074

Overview

Unlock the power of advanced technology with the DMN53D0LQ-7 by Diodes Incorporated. This small signal field effect transistor is a game-changer in the world of switching applications, offering unparalleled performance and reliability. With a sleek package style and innovative design, this N-channel transistor is a must-have for electronics enthusiasts looking to elevate their projects to the next level. Trust in Diodes Incorporated's reputation for excellence and experience the difference with the DMN53D0LQ-7. Elevate your electronics game today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the internal components of the transistor, making it reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have faster switching speeds and higher transconductance, making them suitable for applications requiring high performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design by providing protection against reverse voltage and allows for more efficient operation in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high-speed switching capabilities and efficient performance in electronic circuits.

Minimum DS Breakdown Voltage: 50 V

With a minimum breakdown voltage of 50V, this transistor can withstand higher voltage levels, enhancing its reliability and suitability for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into electronic circuits, saving space and facilitating efficient PCB layout.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability, low power consumption, and efficient performance, making this transistor a desirable choice for various applications.

Transistor Element Material: SILICON

Silicon-based transistors are known for their high performance, durability, and reliability, making this transistor suitable for demanding electronic applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures that the transistor can withstand soldering processes without damage, enhancing its reliability during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN53D0LQ-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

1.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN53D0LQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19