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DMN53D0LDW-13

Diodes Incorporated

DMN53D0LDW-13 by Diodes Incorporated

DMN53D0LDW-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features separate elements with built-in diode in a small outline package, operating in enhancement mode. With 1.6 ohm max drain-source resistance and 0.36A max drain current, it offers efficient performance from -55 to 150°C temperature range.

Median Price

$0.058

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 21 parts In-Stock

1+ parts

$0.330

100+ parts

$0.127

1k+ parts

$0.083

10k+ parts

$0.064

21

$0.330

$0.127

$0.083

$0.064

Newark

USA . 340 parts In-Stock

1+ parts

$0.340

100+ parts

$0.146

1k+ parts

$0.088

10k+ parts

-

340

$0.340

$0.146

$0.088

-

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.038

10,000

-

-

-

$0.038

Farnell

UK . 9,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.058

10k+ parts

$0.056

9,780

-

-

$0.058

$0.056

Element14

Singapore . 9,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.058

10k+ parts

$0.057

9,780

-

-

$0.058

$0.057

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.074

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$0.074

-

-

-

NAC Semi

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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60,000

-

-

-

-

Bristol Electronics

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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40,000

-

-

-

-

Chip Stock

USA . 23,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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23,500

-

-

-

-

Vyrian

USA . 16,201 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,201

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 16,148 parts In-Stock

1+ parts

$0.032

100+ parts

$0.031

1k+ parts

$0.031

10k+ parts

-

16,148

$0.032

$0.031

$0.031

-

Ampacity Inc.

Singapore . 15,915 parts In-Stock

1+ parts

$0.032

100+ parts

-

1k+ parts

-

10k+ parts

-

15,915

$0.032

-

-

-

Continental Prestige Electronics

USA . 4,852 parts In-Stock

1+ parts

$0.074

100+ parts

-

1k+ parts

-

10k+ parts

$0.072

4,852

$0.074

-

-

$0.072

Argo Parts USA

USA . 2,295 parts In-Stock

1+ parts

$0.074

100+ parts

-

1k+ parts

-

10k+ parts

$0.071

2,295

$0.074

-

-

$0.071

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.074

100+ parts

-

1k+ parts

-

10k+ parts

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1,000

$0.074

-

-

-

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.075

100+ parts

$0.075

1k+ parts

$0.075

10k+ parts

-

50

$0.075

$0.075

$0.075

-

Corohmni

South Africa . 600 parts In-Stock

1+ parts

$0.839

100+ parts

-

1k+ parts

-

10k+ parts

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600

$0.839

-

-

-

Aztec Data Supply Inc.

USA . 944 parts In-Stock

1+ parts

$1.610

100+ parts

-

1k+ parts

-

10k+ parts

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944

$1.610

-

-

-

Perfect Parts

USA . 22,400 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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22,400

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-

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iodParts Technologies Inc.

India . 8,660 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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8,660

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-

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,000

-

-

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-

Overview

Unlock the power of innovation with the DMN53D0LDW-13 by Diodes Incorporated. As a leader in small signal field effect transistors, Diodes Incorporated delivers top-quality products that are perfect for switching applications. With a 50V minimum DS breakdown voltage and a maximum drain-source on resistance of 1.6 ohms, this transistor offers unmatched performance and reliability. Whether you're designing a new electronic device or upgrading an existing system, the DMN53D0LDW-13 will provide the efficiency and precision you need to succeed. Elevate your projects with Diodes Incorporated and experience the difference in quality and value today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operations.

Transistor Application: SWITCHING

Ideal for applications requiring fast switching.

Minimum DS Breakdown Voltage: 50 V

Ensures reliable performance under varying voltages.

Surface Mount: YES

Saves space and simplifies the assembly process.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures.

Maximum Drain Current (ID): 0.36 A

Capable of handling moderate current levels.

Maximum Drain-Source On Resistance: 1.6 ohm

Low resistance leads to efficient power transfer.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN53D0LDW-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.36 A

Maximum Drain-Source On Resistance:

1.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN53D0LDW-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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