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DMN53D0L-7

Diodes Incorporated

DMN53D0L-7 by Diodes Incorporated

DMN53D0L-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.5A max drain current, and 1.6 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.54W in a small outline package style.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 360,883 parts In-Stock

1+ parts

$0.300

100+ parts

$0.114

1k+ parts

$0.074

10k+ parts

$0.061

360,883

$0.300

$0.114

$0.074

$0.061

Newark

USA . 2,504 parts In-Stock

1+ parts

$0.365

100+ parts

$0.137

1k+ parts

$0.089

10k+ parts

-

2,504

$0.365

$0.137

$0.089

-

RS (Exports)

UK . 29,900 parts In-Stock

1+ parts

-

100+ parts

$0.039

1k+ parts

$0.173

10k+ parts

$0.146

29,900

-

$0.039

$0.173

$0.146

DigiKey

USA . 19,107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

19,107

-

-

-

$0.052

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.057

15,000

-

-

-

$0.057

Arrow

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

15,000

-

-

-

$0.049

Element14

Singapore . 2,415 parts In-Stock

1+ parts

-

100+ parts

$0.105

1k+ parts

$0.054

10k+ parts

$0.048

2,415

-

$0.105

$0.054

$0.048

Farnell

UK . 645 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.048

10k+ parts

$0.035

645

-

-

$0.048

$0.035

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$0.078

-

-

-

NAC Semi

USA . 237,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.172

237,000

-

-

-

$0.172

Vyrian

USA . 42,433 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42,433

-

-

-

-

Chip Stock

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,000

-

-

-

-

Rutronik

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

3,000

-

-

-

$0.041

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 983,125 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

983,125

$0.024

-

-

-

Argo Parts USA

USA . 3,984 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

$0.076

3,984

$0.078

-

-

$0.076

Continental Prestige Electronics

USA . 2,079 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

$0.076

2,079

$0.078

-

-

$0.076

Corohmni

South Africa . 29 parts In-Stock

1+ parts

$1.278

100+ parts

-

1k+ parts

-

10k+ parts

-

29

$1.278

-

-

-

Modulus Dynamics

Lithuania . 21,625 parts In-Stock

1+ parts

$1.533

100+ parts

$1.533

1k+ parts

$1.533

10k+ parts

-

21,625

$1.533

$1.533

$1.533

-

Aztec Data Supply Inc.

USA . 73 parts In-Stock

1+ parts

$1.870

100+ parts

-

1k+ parts

-

10k+ parts

-

73

$1.870

-

-

-

Authorized Procurement Solutions

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60,000

-

-

-

-

Lixinc

USA . 6,921 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,921

-

-

-

-

Kepictronics

USA . 3,280 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,280

-

-

-

-

GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Glotronic Ltd.

UK . 2,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,700

-

-

-

-

Overview

Enhance your electronic projects with the DMN53D0L-7 by Diodes Incorporated, a top-quality small signal field effect transistor (FET) that offers reliable performance and efficiency. This N-channel transistor, featuring a single configuration with a built-in diode, is perfect for switching applications. With a maximum drain current of 0.5A and a minimum DS breakdown voltage of 50V, this enhancement mode transistor guarantees optimal functionality even in challenging conditions. Trust Diodes Incorporated for cutting-edge technology and innovative solutions that deliver value and versatility to customers in the electronics industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides lightweight and durable packaging for the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient operation in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode in the package.

Transistor Application: SWITCHING

Optimized for fast switching applications.

Surface Mount: YES

Enables easy and efficient installation on PCBs.

Minimum DS Breakdown Voltage: 50 V

Provides a high breakdown voltage for reliable performance.

Maximum Power Dissipation (Abs): 0.54 W

Can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

Suitable for use in a wide range of operating conditions.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments.

Maximum Drain Current (ID): 0.5 A

Capable of handling up to 0.5A of current.

Maximum Drain-Source On Resistance: 1.6 ohm

Provides low resistance for efficient conduction.

Maximum Feedback Capacitance (Crss): 4 pF

Low feedback capacitance for stable performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN53D0L-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

1.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN53D0L-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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