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DMN5L06TK-7

Diodes Incorporated

DMN5L06TK-7 by Diodes Incorporated

DMN5L06TK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.28A max drain current, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.15W and peak reflow temp of 260°C, it offers reliable performance in small outline packages.

Median Price

$0.450

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10,788 parts In-Stock

1+ parts

$0.450

100+ parts

-

1k+ parts

$0.215

10k+ parts

$0.115

10,788

$0.450

-

$0.215

$0.115

Distributors (In-Stock)

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Chip Stock

USA . 15,500 parts In-Stock

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-

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15,500

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Vyrian

USA . 10,330 parts In-Stock

1+ parts

-

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10,330

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Dan-Mar Components

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

-

-

-

-

Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.309

1k+ parts

$0.231

10k+ parts

$0.214

3,000

-

$0.309

$0.231

$0.214

Sensible Micro Corp

USA . 350 parts In-Stock

1+ parts

-

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-

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350

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

-

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300

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ComSIT Distribution GmbH

Germany . 263 parts In-Stock

1+ parts

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263

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Prism Electronics

USA . 76 parts In-Stock

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76

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Rotakorn

Sweden . 75 parts In-Stock

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75

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10,619 parts In-Stock

1+ parts

$0.383

100+ parts

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10,619

$0.383

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Aztec Data Supply Inc.

USA . 2,859 parts In-Stock

1+ parts

$1.082

100+ parts

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2,859

$1.082

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.632

100+ parts

$1.485

1k+ parts

$1.338

10k+ parts

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350

$1.632

$1.485

$1.338

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Corohmni

South Africa . 367 parts In-Stock

1+ parts

$1.691

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367

$1.691

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Lixinc

USA . 16,218 parts In-Stock

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16,218

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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4,000

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iodParts Technologies Inc.

India . 3,350 parts In-Stock

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3,350

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Argo Parts USA

USA . 2,987 parts In-Stock

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2,987

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Continental Prestige Electronics

USA . 1,824 parts In-Stock

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1,824

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Microchip USA

USA . 445 parts In-Stock

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445

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Overview

Discover the power and efficiency of the DMN5L06TK-7 by Diodes Incorporated! This small signal field effect transistor is a game-changer in switching applications, offering a maximum drain current of 0.28A and a minimum DS breakdown voltage of 50V. With a single configuration and built-in diode, this N-channel transistor provides enhanced performance and reliability. Trust in the quality and expertise of Diodes Incorporated to deliver cutting-edge technology that exceeds expectations. Upgrade your electronics with the DMN5L06TK-7 and experience seamless operation and superior functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is lightweight and durable, making the product suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better conductivity and faster switching speed compared to P-channel transistors, making this product ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for improved efficiency and protection against reverse current, enhancing the overall performance of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable and efficient switching operations.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and improving overall system efficiency.

Maximum Drain Current (Abs) (ID): 0.28 A

The high maximum drain current enables the transistor to handle higher loads, making it suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 0.15 W

With a low power dissipation rating, the transistor operates efficiently without overheating, ensuring long-term reliability.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows the transistor to operate in a wide range of environments without overheating or malfunctioning.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN5L06TK-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

.28 A

Maximum Drain Current (ID):

.28 A

Maximum Drain-Source On Resistance:

3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN5L06TK-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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