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DMMT3906-7-F

Diodes Incorporated

DMMT3906-7-F by Diodes Incorporated

DMMT3906-7-F by Diodes Inc. is a PNP BJT with 2 elements, hFE of 30, and VCEO of 40V. Commonly used in small signal applications due to its high transition frequency of 250MHz, low power dissipation of 0.225W, and compact small outline package for surface mount assembly.

Median Price

$0.153

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,945 parts In-Stock

1+ parts

$0.465

100+ parts

$0.258

1k+ parts

$0.177

10k+ parts

-

2,945

$0.465

$0.258

$0.177

-

DigiKey

USA . 28,189 parts In-Stock

1+ parts

$0.540

100+ parts

$0.213

1k+ parts

$0.143

10k+ parts

$0.089

28,189

$0.540

$0.213

$0.143

$0.089

Mouser Electronics

USA . 12,308 parts In-Stock

1+ parts

$0.540

100+ parts

$0.213

1k+ parts

$0.144

10k+ parts

$0.088

12,308

$0.540

$0.213

$0.144

$0.088

Verical

USA . 63,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.085

63,000

-

-

-

$0.085

Arrow

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.085

12,000

-

-

-

$0.085

Farnell

UK . 2,975 parts In-Stock

1+ parts

-

100+ parts

$0.153

1k+ parts

$0.096

10k+ parts

$0.095

2,975

-

$0.153

$0.096

$0.095

Element14

Singapore . 2,975 parts In-Stock

1+ parts

-

100+ parts

$0.129

1k+ parts

$0.092

10k+ parts

$0.091

2,975

-

$0.129

$0.092

$0.091

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 4,325 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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4,325

-

-

-

-

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,000

-

-

-

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Prism Electronics

USA . 15 parts In-Stock

1+ parts

-

100+ parts

-

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15

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 62,003 parts In-Stock

1+ parts

$0.250

100+ parts

$0.120

1k+ parts

$0.090

10k+ parts

$0.080

62,003

$0.250

$0.120

$0.090

$0.080

Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.408

100+ parts

$0.198

1k+ parts

$0.110

10k+ parts

$0.088

3,000

$0.408

$0.198

$0.110

$0.088

Native Components

USA . 868 parts In-Stock

1+ parts

$109.265

100+ parts

-

1k+ parts

-

10k+ parts

$104.894

868

$109.265

-

-

$104.894

Northwest PG Solutions

USA . 1,100 parts In-Stock

1+ parts

$120.191

100+ parts

-

1k+ parts

-

10k+ parts

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1,100

$120.191

-

-

-

Perfect Parts

USA . 15,724 parts In-Stock

1+ parts

-

100+ parts

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15,724

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Kepictronics

USA . 9,000 parts In-Stock

1+ parts

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9,000

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-

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Lixinc

USA . 4,769 parts In-Stock

1+ parts

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100+ parts

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4,769

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-

-

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Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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3,000

-

-

-

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iodParts Technologies Inc.

India . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,000

-

-

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,000

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Overview

Upgrade your electronic designs with the high-quality DMMT3906-7-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures reliability and performance in their products. The DMMT3906-7-F is part of the Small Signal Bipolar Junction Transistors (BJT) category, offering versatility for various applications. With its common base configuration and PNP polarity, this transistor provides efficiency and precision in your circuits. Experience the value and benefits of this product, from its compact package shape to its high transition frequency, the DMMT3906-7-F delivers superior performance for your projects. Trust Diodes Incorporated for top-notch components that elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable or space-constrained applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require PNP transistors, expanding the versatility of the product.

Configuration: COMMON BASE, 2 ELEMENTS

The common base configuration with 2 elements provides good high-frequency performance and allows for low noise operation.

Maximum Power Dissipation (Abs): 0.225 W

The high maximum power dissipation rating ensures the transistor can handle moderate power levels without overheating, increasing reliability.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to be used in a wide range of temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating provides a wide voltage handling capability, making the transistor suitable for various voltage levels.

Maximum Collector Current (IC): 0.2 A

The high maximum collector current rating allows the transistor to handle relatively high current levels, ensuring reliable performance in demanding applications.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency indicates that the transistor can operate at high frequencies, making it suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DMMT3906-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

DMMT3906-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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