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DMMT3904W-7-F

Diodes Incorporated

DMMT3904W-7-F by Diodes Incorporated

DMMT3904W-7-F by Diodes Inc. is a NPN BJT with 2 elements, 6 terminals, and max power dissipation of 0.2 W. Ideal for small signal applications requiring a max collector-emitter voltage of 40 V and transition frequency of 300 MHz in surface mount designs.

Median Price

$0.094

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 34,709 parts In-Stock

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$0.412

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$0.159

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$0.104

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34,709

$0.412

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Mouser Electronics

USA . 49,860 parts In-Stock

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$0.480

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$0.180

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$0.118

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$0.480

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Verical

USA . 123,000 parts In-Stock

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Arrow

USA . 99,000 parts In-Stock

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$0.056

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Avnet

USA . 60,000 parts In-Stock

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DigiKey

USA . 50,209 parts In-Stock

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$0.069

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Element14

Singapore . 36,485 parts In-Stock

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$11.020

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$8.240

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RS (Exports)

UK . 3,250 parts In-Stock

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$0.120

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$0.101

3,250

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$0.101

Future Electronics

Canada . 3,000 parts In-Stock

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$0.066

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$0.066

Distributors (In-Stock)

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Nova Conductors

Japan . 600 parts In-Stock

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$0.146

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600

$0.146

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Tomark Electronics Ltd

UK . 21,000 parts In-Stock

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$0.280

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$0.280

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TME

Poland . 2,149 parts In-Stock

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$0.370

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$0.116

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$0.087

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$0.082

2,149

$0.370

$0.116

$0.087

$0.082

Bristol Electronics

USA . 430 parts In-Stock

1+ parts

$0.375

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$0.188

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$0.131

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430

$0.375

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$0.131

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Component Electronics Inc.

Canada . 3,767 parts In-Stock

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$1.540

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$1.150

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$1.000

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3,767

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Vyrian

USA . 100,527 parts In-Stock

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Component Sense

UK . 93,000 parts In-Stock

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Chip Stock

USA . 76,000 parts In-Stock

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IBS Electronics

USA . 42,000 parts In-Stock

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$0.037

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$0.037

NAC Semi

USA . 24,000 parts In-Stock

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$0.135

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$0.135

Carlin Systems, Inc.

USA . 9,000 parts In-Stock

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Sunrise Surplus Inc.

USA . 3,000 parts In-Stock

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Sensible Micro Corp

USA . 1,950 parts In-Stock

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Prism Electronics

USA . 454 parts In-Stock

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Contempo Components LLC

USA . 338 parts In-Stock

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Bas Electronics GmbH & Co. KG

Germany . 85 parts In-Stock

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ComSIT Distribution GmbH

Germany . 60 parts In-Stock

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Astute Electronics Inc

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Connector Distribution Corp

USA . 34 parts In-Stock

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Right Parts Inc.

USA . 34 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 107,505 parts In-Stock

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$0.066

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$0.064

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107,505

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Ampacity Inc.

Singapore . 100,257 parts In-Stock

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Argo Parts USA

USA . 1,255 parts In-Stock

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$0.146

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$0.141

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Netroflash

USA . 500 parts In-Stock

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$0.146

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$0.143

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500

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$0.143

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Modulus Dynamics

Lithuania . 18,771 parts In-Stock

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$0.449

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$0.449

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$0.449

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18,771

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Aztec Data Supply Inc.

USA . 513 parts In-Stock

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$1.050

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513

$1.050

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Corohmni

South Africa . 222 parts In-Stock

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$1.659

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$1.659

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Andel Nordic

Denmark . 696 parts In-Stock

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$8.771

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$8.420

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$8.420

696

$8.771

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$8.420

Eastek

USA . 111,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 60,565 parts In-Stock

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Continental Prestige Electronics

USA . 37,410 parts In-Stock

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$0.184

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$0.102

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Lixinc

USA . 14,625 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,917 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Kepictronics

USA . 2,328 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Overview

Enhance your electronic projects with the DMMT3904W-7-F from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Bipolar Junction Transistors for various applications. The DMMT3904W-7-F offers exceptional value, providing customers with high performance and reliability. Whether you're working on amplifiers, signal processing, or switching circuits, this NPN transistor with a maximum collector-emitter voltage of 40V is the perfect choice. Trust Diodes Incorporated to meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance in various environments.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it versatile for a wide range of applications.

Maximum Power Dissipation (Abs): 0.2 W

Suitable for low power applications, ensuring efficient operation without overheating.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, allowing for reliable performance in harsh conditions.

Transistor Element Material: SILICON

Silicon transistors offer high performance and efficiency compared to other materials.

Nominal Transition Frequency (fT): 300 MHz

Capable of high-speed switching, making it ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DMMT3904W-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

DMMT3904W-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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