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DMMT5551S-7-F

Diodes Incorporated

DMMT5551S-7-F by Diodes Incorporated

DMMT5551S-7-F by Diodes Inc. is a NPN BJT with 2 elements for switching applications. Features include max. collector-emitter voltage of 160V, max. collector current of 0.2A, and nominal transition frequency of 100MHz. Its small outline package makes it suitable for surface mount designs in various electronic circuits.

Median Price

$0.186

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 11,863 parts In-Stock

1+ parts

$0.440

100+ parts

$0.169

1k+ parts

$0.112

10k+ parts

$0.081

11,863

$0.440

$0.169

$0.112

$0.081

Mouser Electronics

USA . 10,933 parts In-Stock

1+ parts

$0.440

100+ parts

$0.169

1k+ parts

$0.111

10k+ parts

$0.073

10,933

$0.440

$0.169

$0.111

$0.073

Verical

USA . 129,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$0.063

129,000

-

-

-

$0.063

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

-

-

-

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Element14

Singapore . 2,530 parts In-Stock

1+ parts

-

100+ parts

$0.186

1k+ parts

$0.148

10k+ parts

$0.147

2,530

-

$0.186

$0.148

$0.147

Farnell

UK . 2,180 parts In-Stock

1+ parts

-

100+ parts

$0.139

1k+ parts

$0.091

10k+ parts

$0.077

2,180

-

$0.139

$0.091

$0.077

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 3,107 parts In-Stock

1+ parts

-

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3,107

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NAC Semi

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 350 parts In-Stock

1+ parts

$0.879

100+ parts

-

1k+ parts

-

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350

$0.879

-

-

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Northwest PG Solutions

USA . 1,795 parts In-Stock

1+ parts

$0.967

100+ parts

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1,795

$0.967

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Continental Prestige Electronics

USA . 2,740 parts In-Stock

1+ parts

-

100+ parts

$0.153

1k+ parts

$0.085

10k+ parts

$0.074

2,740

-

$0.153

$0.085

$0.074

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Perfect Parts

USA . 840 parts In-Stock

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840

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Overview

Enhance your electronic designs with the DMMT5551S-7-F by Diodes Incorporated. Known for their top-quality components, Diodes Incorporated delivers reliable and efficient small signal bipolar junction transistors that are perfect for switching applications. With a maximum collector-emitter voltage of 160V and a nominal transition frequency of 100MHz, this NPN transistor offers exceptional performance. Its compact rectangular package makes it easy to integrate into your projects, while its high DC current gain ensures optimal functionality. Trust Diodes Incorporated to provide you with the best components for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Offers durability and reliability, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, ensuring compatibility with existing designs.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for independent control and versatility in circuit design.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time and high efficiency.

Surface Mount: YES

Ease of installation and space-saving design for compact electronic devices.

Package Shape: RECTANGULAR

Efficient use of space and easy integration into circuit boards.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 30

Consistent amplification of input signals for improved signal strength.

Maximum Operating Temperature: 150 °C

Operates effectively under various temperature conditions, making it suitable for different environments.

Maximum Collector-Emitter Voltage: 160 V

Can withstand high voltage levels, adding to its reliability and robustness.

Transistor Element Material: SILICON

Known for its stability and efficiency in electronic components, ensuring long-term performance.

Maximum Collector Current (IC): 0.2 A

Suitable for low to moderate current applications, offering versatility in circuit design.

Terminal Finish: MATTE TIN

Provides a reliable electrical connection and corrosion resistance for extended lifespan.

Terminal Position: DUAL

Allows for easy connectivity in various circuit configurations, enhancing usability.

Nominal Transition Frequency (fT): 100 MHz

High frequency response for fast switching and signal processing in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DMMT5551S-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DMMT5551S-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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