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FMBM5551

Onsemi

FMBM5551 by Onsemi

FMBM5551 by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.7W, max collector-emitter voltage of 160V, and fT of 100MHz. This transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.165

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 47,934 parts In-Stock

1+ parts

$0.710

100+ parts

$0.284

1k+ parts

$0.187

10k+ parts

-

47,934

$0.710

$0.284

$0.187

-

Rochester

USA . 14,157 parts In-Stock

1+ parts

-

100+ parts

$0.157

1k+ parts

$0.130

10k+ parts

$0.116

14,157

-

$0.157

$0.130

$0.116

Verical

USA . 9,437 parts In-Stock

1+ parts

-

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$0.145

9,437

-

-

-

$0.145

RS (Exports)

UK . 5,750 parts In-Stock

1+ parts

-

100+ parts

$0.262

1k+ parts

$0.179

10k+ parts

$0.139

5,750

-

$0.262

$0.179

$0.139

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

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$0.136

3,000

-

-

-

$0.136

DigiKey

USA . 1,813 parts In-Stock

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-

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$0.142

1,813

-

-

-

$0.142

Farnell

UK . 1,275 parts In-Stock

1+ parts

-

100+ parts

$0.182

1k+ parts

$0.141

10k+ parts

$0.138

1,275

-

$0.182

$0.141

$0.138

Element14

Singapore . 925 parts In-Stock

1+ parts

-

100+ parts

$0.222

1k+ parts

$0.215

10k+ parts

$0.199

925

-

$0.222

$0.215

$0.199

Newark

USA . 815 parts In-Stock

1+ parts

-

100+ parts

$0.173

1k+ parts

$0.130

10k+ parts

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815

-

$0.173

$0.130

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Chip1Stop

Japan . 651 parts In-Stock

1+ parts

-

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$0.122

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$0.118

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651

-

$0.122

$0.118

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 967 parts In-Stock

1+ parts

$0.122

100+ parts

-

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967

$0.122

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.167

100+ parts

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50

$0.167

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Chip Stock

USA . 16,250 parts In-Stock

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16,250

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Vyrian

USA . 11,665 parts In-Stock

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11,665

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Flip Electronics

USA . 6,407 parts In-Stock

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6,407

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NAC Semi

USA . 6,000 parts In-Stock

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$0.168

6,000

-

-

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$0.168

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.237

3,000

-

-

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$0.237

Cyclops Electronics Ltd

UK . 1,880 parts In-Stock

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1,880

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Distributors (Availability)

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Ampacity Inc.

Singapore . 11,482 parts In-Stock

1+ parts

$0.104

100+ parts

-

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11,482

$0.104

-

-

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Corphita

USA . 2,116 parts In-Stock

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$0.115

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2,116

$0.115

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Corohmni

South Africa . 446 parts In-Stock

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$0.122

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446

$0.122

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Continental Prestige Electronics

USA . 1,340 parts In-Stock

1+ parts

$0.230

100+ parts

$0.157

1k+ parts

$0.113

10k+ parts

-

1,340

$0.230

$0.157

$0.113

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Andel Nordic

Denmark . 4,437 parts In-Stock

1+ parts

$2.229

100+ parts

-

1k+ parts

$2.140

10k+ parts

$2.140

4,437

$2.229

-

$2.140

$2.140

Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 15,261 parts In-Stock

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15,261

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SupplyDigital Components

Austria . 8,027 parts In-Stock

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8,027

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TANS Electronics

Latvia . 7,927 parts In-Stock

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7,927

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A-Z Elektronik GmbH

Germany . 7,350 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,900 parts In-Stock

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Lixinc

USA . 4,612 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,504 parts In-Stock

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Kulean Microsystems

USA . 4,491 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 2,587 parts In-Stock

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2,587

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Supply Digital

USA . 1,216 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 248 parts In-Stock

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248

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Overview

Elevate your audio and electronic projects with the FMBM5551 by Onsemi. As a leading manufacturer in small signal bipolar junction transistors, Onsemi delivers top-quality components for a wide range of applications including amplifiers. With a maximum collector-emitter voltage of 160V and a nominal transition frequency of 100MHz, this NPN transistor offers unparalleled performance and reliability. Trust Onsemi to provide innovative solutions that add value, boost efficiency, and enhance overall functionality to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components.

Polarity or Channel Type: NPN

Commonly used in amplification applications and is compatible with a wide range of circuits.

Configuration: SEPARATE, 2 ELEMENTS

Allows for more flexibility in circuit design and implementation.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance.

Surface Mount: YES

Facilitates easier and more efficient PCB assembly.

Package Shape: RECTANGULAR

Allows for compact and space-saving placement on the PCB.

No. of Elements: 2

Provides a dual functionality in a single component, saving on space and cost.

Maximum Power Dissipation (Abs): 0.7 W

Can handle relatively high power levels, making it suitable for a variety of applications.

Package Style (Meter): SMALL OUTLINE

Contributes to the compact size of the component, ideal for space-constrained designs.

Minimum DC Current Gain (hFE): 30

Ensures reliable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

Can operate in relatively high-temperature environments without a significant decrease in performance.

Maximum Collector-Emitter Voltage: 160 V

Suitable for applications requiring higher voltage levels.

Transistor Element Material: SILICON

Provides good performance and reliability characteristics.

Maximum Collector Current (IC): 0.6 A

Able to handle moderate current levels, suitable for many applications.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance for the terminals.

Terminal Position: DUAL

Facilitates easy integration into circuits and PCB layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a sufficient period during assembly.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Nominal Transition Frequency (fT): 100 MHz

Provides good frequency response for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FMBM5551 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FMBM5551 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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