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DMMT5551-7-F

Diodes Incorporated

DMMT5551-7-F by Diodes Incorporated

DMMT5551-7-F by Diodes Inc. is a NPN BJT transistor with 2 elements, ideal for switching applications. Features include max. collector-emitter voltage of 160V, max. collector current of 0.2A, and min. DC current gain of 30 (hFE). With a package style of small outline and surface mount capability, it operates at up to 150°C and has a nominal transition frequency of 100MHz.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 81,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.073

81,000

-

-

-

$0.073

Verical

USA . 81,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.074

81,000

-

-

-

$0.074

Farnell

UK . 3,575 parts In-Stock

1+ parts

-

100+ parts

$0.131

1k+ parts

$0.103

10k+ parts

$0.101

3,575

-

$0.131

$0.103

$0.101

Element14

Singapore . 3,565 parts In-Stock

1+ parts

-

100+ parts

$10.040

1k+ parts

$8.040

10k+ parts

$7.880

3,565

-

$10.040

$8.040

$7.880

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

-

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-

450

$0.102

-

-

-

TME

Poland . 2 parts In-Stock

1+ parts

$0.490

100+ parts

$0.203

1k+ parts

$0.117

10k+ parts

$0.102

2

$0.490

$0.203

$0.117

$0.102

Chip Stock

USA . 45,500 parts In-Stock

1+ parts

-

100+ parts

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45,500

-

-

-

-

IBS Electronics

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.099

45,000

-

-

-

$0.099

Vyrian

USA . 23,850 parts In-Stock

1+ parts

-

100+ parts

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23,850

-

-

-

-

NAC Semi

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.188

15,000

-

-

-

$0.188

ComSIT Distribution GmbH

Germany . 5,928 parts In-Stock

1+ parts

-

100+ parts

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5,928

-

-

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R&J Components

USA . 2,780 parts In-Stock

1+ parts

-

100+ parts

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2,780

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-

-

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Ashlea Components Ltd

UK . 2,660 parts In-Stock

1+ parts

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100+ parts

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2,660

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-

-

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ACDS - Activité Composants Distribution Service

France . 2,391 parts In-Stock

1+ parts

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100+ parts

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2,391

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 26,933 parts In-Stock

1+ parts

$0.062

100+ parts

$0.060

1k+ parts

$0.060

10k+ parts

-

26,933

$0.062

$0.060

$0.060

-

Ampacity Inc.

Singapore . 26,532 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

10k+ parts

-

26,532

$0.062

-

-

-

Argo Parts USA

USA . 961 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

-

10k+ parts

$0.099

961

$0.102

-

-

$0.099

Corohmni

South Africa . 217 parts In-Stock

1+ parts

$1.948

100+ parts

-

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217

$1.948

-

-

-

Perfect Parts

USA . 55,128 parts In-Stock

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55,128

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-

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Glotronic Ltd.

UK . 16,800 parts In-Stock

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16,800

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-

-

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RC Electronics

USA . 11,700 parts In-Stock

1+ parts

-

100+ parts

$0.110

1k+ parts

$0.110

10k+ parts

$0.110

11,700

-

$0.110

$0.110

$0.110

Lixinc

USA . 9,494 parts In-Stock

1+ parts

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9,494

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-

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Eastek

USA . 9,000 parts In-Stock

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9,000

-

-

-

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Continental Prestige Electronics

USA . 5,055 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.091

10k+ parts

$0.069

5,055

-

$0.172

$0.091

$0.069

iodParts Technologies Inc.

India . 4,205 parts In-Stock

1+ parts

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4,205

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-

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Speed Components Ltd (Excess)

Israel . 2,892 parts In-Stock

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2,892

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-

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Cyclops Electronics Ltd (Excess)

UK . 2,391 parts In-Stock

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2,391

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Formix International (Excess)

India . 166 parts In-Stock

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166

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.100

1k+ parts

$0.097

10k+ parts

$0.094

100

-

$0.100

$0.097

$0.094

Overview

Upgrade your electronic projects with the DMMT5551-7-F transistor from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-quality components for all applications. This NPN small signal bipolar junction transistor is perfect for switching applications and offers a high DC current gain of 30. With a maximum collector-emitter voltage of 160V and a peak transition frequency of 100MHz, this transistor provides reliable performance in a compact, surface-mount package. Trust Diodes Incorporated to deliver value and efficiency with the DMMT5551-7-F transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

Suitable for a wide range of applications including amplification and switching.

Maximum Power Dissipation (Abs): 0.3 W

Capable of handling moderate power levels, making it suitable for various electronic circuits.

Maximum Collector-Emitter Voltage: 160 V

Can withstand high voltage levels, enhancing its versatility in different circuit designs.

Nominal Transition Frequency (fT): 100 MHz

Provides high frequency capability, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DMMT5551-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DMMT5551-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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