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DMMT3904WQ-7-F

Diodes Incorporated

DMMT3904WQ-7-F by Diodes Incorporated

DMMT3904WQ-7-F by Diodes Inc. is a NPN BJT with 2 elements, hFE of 30, VCE of 40V, and fT of 300MHz. Ideal for amplifier applications due to its small outline package style and Gull Wing terminals for surface mount assembly. AEC-Q101 compliant, it offers fast turn-on/off times (70ns/250ns) and can handle up to 0.2A collector current.

Median Price

$0.187

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,120 parts In-Stock

1+ parts

$0.639

100+ parts

$0.254

1k+ parts

$0.172

10k+ parts

-

2,120

$0.639

$0.254

$0.172

-

DigiKey

USA . 6,396 parts In-Stock

1+ parts

$0.660

100+ parts

$0.261

1k+ parts

$0.177

10k+ parts

-

6,396

$0.660

$0.261

$0.177

-

Mouser Electronics

USA . 5,009 parts In-Stock

1+ parts

$0.660

100+ parts

$0.262

1k+ parts

$0.198

10k+ parts

-

5,009

$0.660

$0.262

$0.198

-

Verical

USA . 363,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.104

363,000

-

-

-

$0.104

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.105

3,000

-

-

-

$0.105

Farnell

UK . 2,530 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

$0.119

10k+ parts

$0.112

2,530

-

$0.185

$0.119

$0.112

Element14

Singapore . 2,530 parts In-Stock

1+ parts

-

100+ parts

$0.187

1k+ parts

$0.124

10k+ parts

-

2,530

-

$0.187

$0.124

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.158

100+ parts

-

1k+ parts

-

10k+ parts

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200

$0.158

-

-

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Vyrian

USA . 107,786 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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107,786

-

-

-

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NAC Semi

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.420

27,000

-

-

-

$0.420

IBS Electronics

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.074

24,000

-

-

-

$0.074

Component Sense

UK . 9,138 parts In-Stock

1+ parts

-

100+ parts

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9,138

-

-

-

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PC Components Company LLC

USA . 1,500 parts In-Stock

1+ parts

-

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1,500

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-

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Bristol Electronics

USA . 1,500 parts In-Stock

1+ parts

-

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1,500

-

-

-

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Prism Electronics

USA . 556 parts In-Stock

1+ parts

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556

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 98,162 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

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98,162

$0.078

-

-

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Argo Parts USA

USA . 3,672 parts In-Stock

1+ parts

$0.158

100+ parts

-

1k+ parts

-

10k+ parts

$0.153

3,672

$0.158

-

-

$0.153

Corohmni

South Africa . 315 parts In-Stock

1+ parts

$0.159

100+ parts

-

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315

$0.159

-

-

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Semicontronic

India . 88,305 parts In-Stock

1+ parts

$0.187

100+ parts

$0.182

1k+ parts

$0.181

10k+ parts

-

88,305

$0.187

$0.182

$0.181

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Aztec Data Supply Inc.

USA . 2,762 parts In-Stock

1+ parts

$1.460

100+ parts

-

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-

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2,762

$1.460

-

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GreenTree Electronics

Israel . 42,000 parts In-Stock

1+ parts

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42,000

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iodParts Technologies Inc.

India . 5,510 parts In-Stock

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5,510

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-

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Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.130

10k+ parts

-

3,000

-

-

$0.130

-

Continental Prestige Electronics

USA . 2,580 parts In-Stock

1+ parts

-

100+ parts

$0.205

1k+ parts

$0.117

10k+ parts

$0.092

2,580

-

$0.205

$0.117

$0.092

Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.155

1k+ parts

$0.150

10k+ parts

$0.147

1,000

-

$0.155

$0.150

$0.147

Overview

Discover the power of the DMMT3904WQ-7-F by Diodes Incorporated, a top-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. With its NPN polarity, 2 separate elements, and high DC current gain, this transistor offers unmatched performance and reliability. Trust in the expertise of Diodes Incorporated to deliver cutting-edge technology in a compact, surface-mount package, allowing for easy integration into your designs. Elevate your projects with the DMMT3904WQ-7-F and experience the exceptional value and benefits it brings to your circuits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Enables easy and convenient mounting on printed circuit boards, saving space and facilitating automated assembly processes.

Minimum DC Current Gain (hFE): 30

Ensures stable and reliable amplification of signals with a minimum amplification factor of 30.

Maximum Collector-Emitter Voltage: 40 V

Can handle relatively high voltages, providing a safe operating range for the transistor in various electronic circuits.

Maximum Collector Current (IC): 0.2 A

Capable of handling current up to 0.2 A, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 300 MHz

Offers high frequency performance up to 300 MHz, making it ideal for high-speed switching and signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DMMT3904WQ-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

DMMT3904WQ-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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