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DCX144EH-7

Diodes Incorporated

DCX144EH-7 by Diodes Incorporated

DCX144EH-7 by Diodes Inc. is a Small Signal BJT with NPN/PNP polarity, 2 elements with built-in resistor, and max power dissipation of 0.15W. Ideal for applications requiring small outline package style, such as signal amplification in electronic circuits operating up to 150°C with a collector-emitter voltage of 50V.

Median Price

$0.137

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 106 parts In-Stock

1+ parts

$0.410

100+ parts

$0.166

1k+ parts

$0.108

10k+ parts

$0.094

106

$0.410

$0.166

$0.108

$0.094

Newark

USA . 2,730 parts In-Stock

1+ parts

$0.422

100+ parts

$0.171

1k+ parts

$0.111

10k+ parts

-

2,730

$0.422

$0.171

$0.111

-

DigiKey

USA . 1,432 parts In-Stock

1+ parts

$0.430

100+ parts

$0.169

1k+ parts

$0.112

10k+ parts

$0.081

1,432

$0.430

$0.169

$0.112

$0.081

Verical

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

18,000

-

-

-

$0.070

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

-

-

-

-

Farnell

UK . 2,785 parts In-Stock

1+ parts

-

100+ parts

$0.126

1k+ parts

$0.073

10k+ parts

-

2,785

-

$0.126

$0.073

-

Element14

Singapore . 2,785 parts In-Stock

1+ parts

-

100+ parts

$0.137

1k+ parts

$0.121

10k+ parts

-

2,785

-

$0.137

$0.121

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Arrow

USA . 1,103 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.054

1,103

-

-

-

$0.054

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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3,000

-

-

-

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SPM Sales

USA . 93 parts In-Stock

1+ parts

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93

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Nova Conductors

Japan . 85 parts In-Stock

1+ parts

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85

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Cyclops Electronics Ltd

UK . 1 parts In-Stock

1+ parts

-

100+ parts

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1

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 12,998 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

-

12,998

$0.046

-

-

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Semicontronic

India . 12,901 parts In-Stock

1+ parts

$0.046

100+ parts

$0.045

1k+ parts

$0.045

10k+ parts

-

12,901

$0.046

$0.045

$0.045

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Modulus Dynamics

Lithuania . 2,911 parts In-Stock

1+ parts

$0.106

100+ parts

$0.106

1k+ parts

$0.106

10k+ parts

-

2,911

$0.106

$0.106

$0.106

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Corohmni

South Africa . 184 parts In-Stock

1+ parts

$0.106

100+ parts

-

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-

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184

$0.106

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-

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Continental Prestige Electronics

USA . 2,885 parts In-Stock

1+ parts

$0.428

100+ parts

$0.174

1k+ parts

$0.092

10k+ parts

$0.069

2,885

$0.428

$0.174

$0.092

$0.069

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.090

10k+ parts

-

3,000

-

-

$0.090

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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2,000

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-

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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Argo Parts USA

USA . 1,025 parts In-Stock

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1,025

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Overview

Discover the power of innovation with the DCX144EH-7 by Diodes Incorporated. As a leading manufacturer in small signal bipolar junction transistors, Diodes Incorporated delivers top-quality products with a focus on performance and reliability. The DCX144EH-7 offers customers a versatile solution with its NPN and PNP polarity options, separate configuration with built-in resistors, and small outline package style for easy integration. Whether you're working on consumer electronics, telecommunications, or industrial applications, this transistor provides the value, benefits, and advantages you need to bring your designs to life. Elevate your projects with the DCX144EH-7 and experience the difference of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN AND PNP

The availability of both NPN and PNP options allows for greater flexibility in circuit design and application.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and helps in controlling the current flow in the system.

Surface Mount: YES

Being surface mountable makes installation of this transistor easier and more convenient, especially in compact electronic devices.

Maximum Power Dissipation: 0.15 W

With a relatively high maximum power dissipation, this transistor can handle heat efficiently and operate reliably under demanding conditions.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for the transistor to be used in a wide range of applications without risking breakdown.

Nominal Transition Frequency: 250 MHz

A high transition frequency ensures fast switching speeds and high-frequency performance, making this transistor suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DCX144EH-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DCX144EH-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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