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DCX143EU-7-F

Diodes Incorporated

DCX143EU-7-F by Diodes Incorporated

DCX143EU-7-F by Diodes Inc. is a Small Signal BJT with NPN and PNP channels, VCEsat of 0.3V, and hFE of 100. It's used in applications requiring low power dissipation, such as signal amplification in electronic circuits. With a max operating temp of 150°C and fT of 250MHz, it's ideal for compact designs needing high-speed switching capabilities.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 48,034 parts In-Stock

1+ parts

$0.280

100+ parts

$0.105

1k+ parts

$0.068

10k+ parts

$0.048

48,034

$0.280

$0.105

$0.068

$0.048

Mouser Electronics

USA . 35,647 parts In-Stock

1+ parts

$0.290

100+ parts

$0.112

1k+ parts

$0.073

10k+ parts

$0.060

35,647

$0.290

$0.112

$0.073

$0.060

Future Electronics

Canada . 6,000 parts In-Stock

1+ parts

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$0.034

6,000

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$0.034

Farnell

UK . 1,324 parts In-Stock

1+ parts

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$0.053

10k+ parts

$0.043

1,324

-

-

$0.053

$0.043

Element14

Singapore . 1,324 parts In-Stock

1+ parts

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100+ parts

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$0.073

10k+ parts

$0.066

1,324

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-

$0.073

$0.066

Arrow

USA . 1,035 parts In-Stock

1+ parts

-

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$0.027

1,035

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$0.027

Verical

USA . 1,035 parts In-Stock

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$0.027

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1,035

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$0.027

-

Distributors (In-Stock)

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TEDSS.com

USA . 687 parts In-Stock

1+ parts

$0.250

100+ parts

$0.160

1k+ parts

-

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687

$0.250

$0.160

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Vyrian

USA . 209,210 parts In-Stock

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209,210

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Chip Stock

USA . 15,500 parts In-Stock

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15,500

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ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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6,000

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.053

6,000

-

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$0.053

IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

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100+ parts

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$0.072

6,000

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$0.072

ComSIT USA

USA . 6,000 parts In-Stock

1+ parts

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100+ parts

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6,000

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Classic Components Corporation

USA . 272 parts In-Stock

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Nova Conductors

Japan . 52 parts In-Stock

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Semicontronic

India . 245,988 parts In-Stock

1+ parts

$0.028

100+ parts

$0.027

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$0.027

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-

245,988

$0.028

$0.027

$0.027

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Ampacity Inc.

Singapore . 209,257 parts In-Stock

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$0.061

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209,257

$0.061

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Corohmni

South Africa . 148 parts In-Stock

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$0.069

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148

$0.069

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Advanced Electronics

New Zealand . 21 parts In-Stock

1+ parts

$0.797

100+ parts

$0.725

1k+ parts

$0.654

10k+ parts

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21

$0.797

$0.725

$0.654

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Aztec Data Supply Inc.

USA . 3,448 parts In-Stock

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$0.841

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3,448

$0.841

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Eastek

USA . 528,000 parts In-Stock

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$0.030

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528,000

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$0.030

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Perfect Parts

USA . 28,575 parts In-Stock

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RC Electronics

USA . 16,200 parts In-Stock

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Kepictronics

USA . 9,000 parts In-Stock

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Lixinc

USA . 8,609 parts In-Stock

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8,609

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Continental Prestige Electronics

USA . 3,440 parts In-Stock

1+ parts

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$0.149

1k+ parts

$0.076

10k+ parts

$0.052

3,440

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$0.149

$0.076

$0.052

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 887 parts In-Stock

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887

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Discover the DCX143EU-7-F by Diodes Incorporated, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for seamless integration in various applications. With its NPN and PNP configurations and built-in resistors, this transistor offers exceptional performance and reliability. Whether you're working on audio amplifiers, LED drivers, or other electronic projects, this transistor delivers the value, benefits, and advantages you need to succeed. Trust Diodes Incorporated for cutting-edge technology that powers innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN AND PNP

Versatile usage in both NPN and PNP circuits, offering flexibility in design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy integration into circuits with built-in resistors, simplifying circuit design.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort.

Maximum VCEsat: 0.3 V

Low VCEsat reduces power consumption and improves efficiency in applications.

Package Shape: RECTANGULAR

Compact rectangular shape saves space on the PCB and allows for dense packaging.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connection and ease of soldering during assembly.

No. of Elements: 2

Dual elements in one package offer convenience and cost-effectiveness in circuit design.

Maximum Power Dissipation (Abs): 0.2 W

High power dissipation rating allows for reliable operation under heavy loads.

Package Style (Meter): SMALL OUTLINE

Small outline package fits well in compact designs and saves space on the PCB.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures stability and consistent performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliable performance under various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating allows for use in a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in electronic circuits.

Minimum Operating Temperature: -55 °C

Suitable for operation in cold environments, increasing the application versatility of the transistor.

Maximum Collector Current (IC): 0.1 A

High collector current rating for various current-hungry applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal positions allow for flexibility in PCB layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper solder reflow process during assembly for reliable connections.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for robust soldering during assembly.

Reference Standard: MIL-STD-202

Compliance with MIL-STD-202 standard ensures high quality and reliability in military and aerospace applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speed and high-frequency performance in RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DCX143EU-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL-STD-202

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DCX143EU-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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