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DCX114EUQ-13R-F

Diodes Incorporated

DCX114EUQ-13R-F by Diodes Incorporated

DCX114EUQ-13R-F by Diodes Inc. is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor, VCEsat of 0.3V, hFE of 100, and max IC of 0.1A. Ideal for automotive applications due to AEC-Q101 compliance, operating temp range -55 to 150°C, and high transition frequency of 250MHz.

Median Price

$0.041

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10,000 parts In-Stock

1+ parts

$0.360

100+ parts

$0.151

1k+ parts

$0.077

10k+ parts

$0.053

10,000

$0.360

$0.151

$0.077

$0.053

Verical

USA . 220,000 parts In-Stock

1+ parts

-

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$0.041

220,000

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-

$0.041

Future Electronics

Canada . 30,000 parts In-Stock

1+ parts

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$0.031

30,000

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$0.031

Avnet

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Cyclops Electronics Ltd

UK . 500 parts In-Stock

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500

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 494 parts In-Stock

1+ parts

$38.530

100+ parts

-

1k+ parts

-

10k+ parts

$36.989

494

$38.530

-

-

$36.989

Northwest PG Solutions

USA . 860 parts In-Stock

1+ parts

$42.384

100+ parts

-

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860

$42.384

-

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Eastek

USA . 10,000 parts In-Stock

1+ parts

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$0.045

10,000

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$0.045

RC Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

9,000

-

$0.090

$0.080

$0.080

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Overview

Elevate your electronic projects with the DCX114EUQ-13R-F from Diodes Incorporated. As a leader in small signal bipolar junction transistors, Diodes Incorporated delivers top-notch quality and reliability in every component. Ideal for a wide range of applications, this transistor offers separate NPN and PNP elements with built-in resistors, ensuring seamless integration into your designs. With a low VCEsat of just 0.3V and a minimum DC current gain of 100, this transistor provides exceptional performance and efficiency. Trust Diodes Incorporated to provide the superior components you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides good insulation and protects the transistor from external factors, increasing its durability.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatile applications in both analog and digital circuit designs.

Maximum VCEsat: 0.3 V

Low VCEsat ensures minimal voltage drop across the collector-emitter junction, leading to efficient performance.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures amplified output signals with stability and accuracy.

Maximum Collector-Emitter Voltage: 50 V

Ability to handle up to 50V ensures safe operation within a wide range of circuit voltage levels.

Maximum Collector Current (IC): 0.1 A

Capable of handling a collector current of up to 0.1A, making it suitable for low-power applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for reliable performance in high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DCX114EUQ-13R-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IATF 16949; MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DCX114EUQ-13R-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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