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DCX123JU-7-F

Diodes Incorporated

DCX123JU-7-F by Diodes Incorporated

DCX123JU-7-F by Diodes Inc. is a Small Signal BJT with NPN/PNP polarity, 2 elements, and built-in resistor. It has VCEsat of 0.3V, hFE of 100, and operates up to 150°C. Ideal for applications requiring high transition frequency (fT) of 250MHz in compact designs with limited power dissipation.

Median Price

$0.280

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 37,205 parts In-Stock

1+ parts

$0.280

100+ parts

$0.105

1k+ parts

$0.068

10k+ parts

$0.048

37,205

$0.280

$0.105

$0.068

$0.048

Mouser Electronics

USA . 7,218 parts In-Stock

1+ parts

$0.280

100+ parts

$0.105

1k+ parts

$0.069

10k+ parts

$0.054

7,218

$0.280

$0.105

$0.069

$0.054

Verical

USA . 1,377,000 parts In-Stock

1+ parts

-

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-

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$0.033

1,377,000

-

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$0.033

Arrow

USA . 9 parts In-Stock

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9

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Distributors (In-Stock)

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TME

Poland . 873 parts In-Stock

1+ parts

$0.230

100+ parts

$0.087

1k+ parts

$0.056

10k+ parts

$0.040

873

$0.230

$0.087

$0.056

$0.040

Cyclops Electronics Ltd

UK . 183,000 parts In-Stock

1+ parts

-

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183,000

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NAC Semi

USA . 18,000 parts In-Stock

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18,000

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Bristol Electronics

USA . 17,350 parts In-Stock

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17,350

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ComSIT Distribution GmbH

Germany . 11,901 parts In-Stock

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11,901

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Inventory MP

USA . 1,926 parts In-Stock

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1,926

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Nova Conductors

Japan . 70 parts In-Stock

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70

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Prism Electronics

USA . 41 parts In-Stock

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41

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Distributors (Availability)

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Ampacity Inc.

Singapore . 49,187 parts In-Stock

1+ parts

$0.028

100+ parts

-

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49,187

$0.028

-

-

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Component Stockers USA

USA . 67,171 parts In-Stock

1+ parts

$0.030

100+ parts

$0.030

1k+ parts

$0.030

10k+ parts

$0.020

67,171

$0.030

$0.030

$0.030

$0.020

Continental Prestige Electronics

USA . 2,690 parts In-Stock

1+ parts

$0.285

100+ parts

$0.120

1k+ parts

$0.062

10k+ parts

-

2,690

$0.285

$0.120

$0.062

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Modulus Dynamics

Lithuania . 4,867 parts In-Stock

1+ parts

$1.015

100+ parts

$1.015

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$1.015

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4,867

$1.015

$1.015

$1.015

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.260

100+ parts

$1.147

1k+ parts

$1.033

10k+ parts

-

350

$1.260

$1.147

$1.033

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Corohmni

South Africa . 686 parts In-Stock

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$1.684

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686

$1.684

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Andel Nordic

Denmark . 4,944 parts In-Stock

1+ parts

$8.989

100+ parts

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$8.629

10k+ parts

$8.629

4,944

$8.989

-

$8.629

$8.629

Component Connect

USA . 1,142,779 parts In-Stock

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BidChips

USA . 660,453 parts In-Stock

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Infinite Electronics LLP (Excess)

. 379,085 parts In-Stock

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Eastek

USA . 303,000 parts In-Stock

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GreenTree Electronics

Israel . 165,000 parts In-Stock

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Perfect Parts

USA . 108,677 parts In-Stock

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108,677

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Lixinc

USA . 13,303 parts In-Stock

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S.R.D Solutions

India . 5,450 parts In-Stock

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Argo Parts USA

USA . 4,414 parts In-Stock

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4,414

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Kepictronics

USA . 1,513 parts In-Stock

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1,513

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Overview

Unlock the power of innovation with the DCX123JU-7-F from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Bipolar Junction Transistors (BJT) that are ideal for a variety of applications. With NPN and PNP configurations, built-in resistors, and a compact design, this product offers unmatched performance and reliability. Experience the benefits of improved efficiency, enhanced functionality, and consistent results with the DCX123JU-7-F. Upgrade your projects today with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for flexibility in circuit design and compatibility with different configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor helps in simplifying the circuit design and reduces the need for additional components.

Surface Mount: YES

Being surface mountable makes the transistor easy to install on PCBs, saving space and enabling automated assembly processes.

Maximum VCEsat: 0.3 V

Low VCEsat helps in minimizing power losses and improving efficiency in switching applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Nominal Transition Frequency (fT): 250 MHz

A high transition frequency ensures fast response times and enables high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DCX123JU-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL-STD-202

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DCX123JU-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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