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DCX114EU-7-F

Diodes Incorporated

DCX114EU-7-F by Diodes Incorporated

DCX114EU-7-F by Diodes Inc. is a Small Signal BJT with NPN and PNP channels, VCEsat of 0.3V, hFE of 100. It's a dual-element transistor in a small outline package suitable for applications requiring low power dissipation and high transition frequency up to 250MHz.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 5,996 parts In-Stock

1+ parts

$0.020

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

-

5,996

$0.020

$0.020

$0.020

-

DigiKey

USA . 149,501 parts In-Stock

1+ parts

$0.240

100+ parts

$0.092

1k+ parts

$0.059

10k+ parts

$0.042

149,501

$0.240

$0.092

$0.059

$0.042

Mouser Electronics

USA . 4,678 parts In-Stock

1+ parts

$0.240

100+ parts

$0.092

1k+ parts

$0.060

10k+ parts

$0.049

4,678

$0.240

$0.092

$0.060

$0.049

Avnet

USA . 393,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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393,000

-

-

-

-

Verical

USA . 5,996 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.028

5,996

-

-

-

$0.028

Arrow

USA . 1,496 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.024

1,496

-

-

-

$0.024

Farnell

UK . 265 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.052

10k+ parts

$0.042

265

-

$0.079

$0.052

$0.042

Element14

Singapore . 265 parts In-Stock

1+ parts

-

100+ parts

$0.134

1k+ parts

$0.072

10k+ parts

$0.055

265

-

$0.134

$0.072

$0.055

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 390 parts In-Stock

1+ parts

$0.220

100+ parts

$0.093

1k+ parts

$0.057

10k+ parts

$0.039

390

$0.220

$0.093

$0.057

$0.039

Vyrian

USA . 461,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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461,780

-

-

-

-

NAC Semi

USA . 393,000 parts In-Stock

1+ parts

-

100+ parts

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393,000

-

-

-

-

IBS Electronics

USA . 198,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.081

198,000

-

-

-

$0.081

Chip Stock

USA . 33,500 parts In-Stock

1+ parts

-

100+ parts

-

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33,500

-

-

-

-

Bristol Electronics

USA . 4,314 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,314

-

-

-

-

PC Components Company LLC

USA . 719 parts In-Stock

1+ parts

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100+ parts

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719

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 412,057 parts In-Stock

1+ parts

$0.008

100+ parts

-

1k+ parts

-

10k+ parts

-

412,057

$0.008

-

-

-

Continental Prestige Electronics

USA . 1,235 parts In-Stock

1+ parts

$0.400

100+ parts

$0.149

1k+ parts

$0.076

10k+ parts

$0.052

1,235

$0.400

$0.149

$0.076

$0.052

Aztec Data Supply Inc.

USA . 2,134 parts In-Stock

1+ parts

$1.566

100+ parts

-

1k+ parts

-

10k+ parts

-

2,134

$1.566

-

-

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Corohmni

South Africa . 167 parts In-Stock

1+ parts

$1.749

100+ parts

-

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-

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167

$1.749

-

-

-

Eastek

USA . 294,000 parts In-Stock

1+ parts

-

100+ parts

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294,000

-

-

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GreenTree Electronics

Israel . 78,000 parts In-Stock

1+ parts

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78,000

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Perfect Parts

USA . 47,779 parts In-Stock

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47,779

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Glotronic Ltd.

UK . 14,400 parts In-Stock

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14,400

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Assy Fe

Spain . 13,877 parts In-Stock

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13,877

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Lixinc

USA . 9,323 parts In-Stock

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9,323

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Kepictronics

USA . 9,000 parts In-Stock

1+ parts

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9,000

-

-

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Argo Parts USA

USA . 3,146 parts In-Stock

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3,146

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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100+ parts

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2,000

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-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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1,000

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-

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Overview

Discover the superior performance of the DCX114EU-7-F by Diodes Incorporated, a top-of-the-line Small Signal Bipolar Junction Transistor. With its NPN and PNP configuration, this transistor offers unmatched reliability and efficiency in a compact package. Ideal for a wide range of applications, this product boasts a maximum VCEsat of 0.3V and a minimum DC current gain of 100. Experience the precision engineering and cutting-edge technology that Diodes Incorporated is known for, and elevate your projects to new heights with the DCX114EU-7-F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN AND PNP

Allows for versatile use in different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Offers flexibility in circuit design and simplifies component layout.

Maximum VCEsat: 0.3 V

Low voltage saturation helps minimize power losses and improve efficiency.

Surface Mount: YES

Enables easy and efficient PCB assembly.

Maximum Power Dissipation (Abs): 0.2 W

Suitable for low-power applications, helping to prevent overheating.

Package Shape: RECTANGULAR

Convenient for placement and soldering on a circuit board.

Minimum DC Current Gain (hFE): 100

Ensures stable and reliable amplification in various circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, increasing reliability.

Maximum Collector-Emitter Voltage: 50 V

Offers a good margin of safety in voltage applications.

Transistor Element Material: SILICON

Provides high performance and reliability.

Minimum Operating Temperature: -55 °C

Suitable for use in cold environments without performance degradation.

Maximum Collector Current (IC): 0.1 A

Allows for moderate current handling capability in various applications.

Nominal Transition Frequency (fT): 250 MHz

Indicates high-speed performance for applications requiring fast switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DCX114EU-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL-STD-202

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DCX114EU-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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