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BCX53TA

Diodes Incorporated

BCX53TA by Diodes Incorporated

BCX53TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 25, and can handle up to 1A collector current. With a small outline package style, it operates b/w -55°C to 150°C and features a peak reflow temperature of 260°C.

Median Price

$0.264

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 4 parts In-Stock

1+ parts

$0.403

100+ parts

$0.167

1k+ parts

$0.130

10k+ parts

-

4

$0.403

$0.167

$0.130

-

Mouser Electronics

USA . 458 parts In-Stock

1+ parts

$0.530

100+ parts

$0.233

1k+ parts

$0.128

10k+ parts

$0.085

458

$0.530

$0.233

$0.128

$0.085

Verical

USA . 783,000 parts In-Stock

1+ parts

-

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-

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$0.057

783,000

-

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-

$0.057

Arrow

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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$0.433

10k+ parts

$0.411

2,000

-

-

$0.433

$0.411

Element14

Singapore . 775 parts In-Stock

1+ parts

-

100+ parts

$0.126

1k+ parts

$0.087

10k+ parts

$0.086

775

-

$0.126

$0.087

$0.086

Farnell

UK . 685 parts In-Stock

1+ parts

-

100+ parts

$0.102

1k+ parts

$0.094

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-

685

-

$0.102

$0.094

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.106

100+ parts

-

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-

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750

$0.106

-

-

-

NAC Semi

USA . 426,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.077

426,000

-

-

-

$0.077

Vyrian

USA . 262,936 parts In-Stock

1+ parts

-

100+ parts

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262,936

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ComSIT Distribution GmbH

Germany . 5,000 parts In-Stock

1+ parts

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5,000

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ComSIT USA

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Speed Components Ltd

Israel . 903 parts In-Stock

1+ parts

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903

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Euro-Tech

UK . 800 parts In-Stock

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800

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,519 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

-

10k+ parts

$0.095

3,519

$0.098

-

-

$0.095

Component Stockers USA

USA . 134,453 parts In-Stock

1+ parts

$0.400

100+ parts

$0.080

1k+ parts

$0.070

10k+ parts

$0.060

134,453

$0.400

$0.080

$0.070

$0.060

Continental Prestige Electronics

USA . 800 parts In-Stock

1+ parts

$0.428

100+ parts

$0.175

1k+ parts

$0.079

10k+ parts

$0.071

800

$0.428

$0.175

$0.079

$0.071

Corohmni

South Africa . 437 parts In-Stock

1+ parts

$0.561

100+ parts

-

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-

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437

$0.561

-

-

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Andel Nordic

Denmark . 32 parts In-Stock

1+ parts

$1.263

100+ parts

-

1k+ parts

$1.213

10k+ parts

$1.213

32

$1.263

-

$1.213

$1.213

Aztec Data Supply Inc.

USA . 207 parts In-Stock

1+ parts

$1.858

100+ parts

-

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207

$1.858

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Perfect Parts

USA . 368,045 parts In-Stock

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368,045

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Eastek

USA . 106,000 parts In-Stock

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$0.059

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106,000

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-

$0.059

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

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20,000

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iodParts Technologies Inc.

India . 20,000 parts In-Stock

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Lixinc

USA . 17,839 parts In-Stock

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17,839

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Kepictronics

USA . 12,000 parts In-Stock

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12,000

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.104

1k+ parts

$0.101

10k+ parts

$0.099

2,000

-

$0.104

$0.101

$0.099

GreenTree Electronics

Israel . 1,000 parts In-Stock

1+ parts

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1,000

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Overview

Unlock the power of efficient switching with the BCX53TA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). Perfect for various applications, this PNP transistor offers a low VCEsat of 0.5V, maximizing performance while minimizing power consumption. With a small outline package and high operating temperature, the BCX53TA is the ideal choice for your switching needs. Trust in Diodes Incorporated to deliver superior products that provide unmatched value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good protection for the transistor and ensures durability in various working conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used for switching applications and voltage amplification, making this transistor suitable for a wide range of electronic projects.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to incorporate into different electrical systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and efficiency in controlling electrical signals.

Surface Mount: YES

The surface mount feature allows for easy and secure mounting on PCBs, saving space and enabling automated assembly processes.

Maximum VCEsat: 0.5 V

The low maximum VCEsat value indicates minimal power loss and efficient operation in switching circuits.

Package Shape: RECTANGULAR

The rectangular package shape facilitates placement on PCBs and ensures compatibility with standard mounting techniques.

Terminal Form: FLAT

The flat terminal form simplifies soldering and ensures a secure connection in circuit applications.

No. of Terminals: 3

The three-terminal design provides necessary connections for the transistor to function effectively in a circuit setup.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle higher power levels without overheating, ensuring reliability in operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact designs in electronic devices.

Minimum DC Current Gain (hFE): 25

The minimum DC current gain of 25 ensures consistent amplification of current in the transistor's operation, enhancing its performance in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the transistor to withstand elevated temperatures, making it suitable for demanding environments.

Maximum Collector-Base Capacitance: 25 pF

The low maximum collector-base capacitance helps in reducing signal distortion and improving the transistor's high-frequency response.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80V enables the transistor to withstand high voltage levels in circuit applications.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material that provides good electrical properties and reliability in transistor performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows the transistor to function in cold environments without compromising its performance.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, the transistor can handle higher current loads, making it suitable for various applications requiring power switching.

Terminal Finish: MATTE TIN

The matte tin finish on terminals ensures good solderability and corrosion resistance, enhancing the reliability and longevity of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and ensures easy integration of the transistor into electronic assemblies.

Case Connection: COLLECTOR

The collector case connection offers ease of circuit configuration and allows for efficient heat dissipation in power applications.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reflow processes for reliable circuit connections.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, the transistor can withstand high-temperature soldering processes without any damage.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency of 150MHz indicates excellent high-frequency performance for signal amplification and switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX53TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCX53TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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