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2DA1201YQTC

Diodes Incorporated

2DA1201YQTC by Diodes Incorporated

2DA1201YQTC by Diodes Inc. is a PNP BJT with 120V VCEO, 0.8A IC, and 160MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high hFE of 120. Package: SOT-23, Surface Mount, Single Configuration.

Median Price

$0.148

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,962 parts In-Stock

1+ parts

$0.610

100+ parts

$0.336

1k+ parts

$0.204

10k+ parts

$0.154

3,962

$0.610

$0.336

$0.204

$0.154

Verical

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

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$0.148

24,000

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$0.148

Future Electronics

Canada . 4,000 parts In-Stock

1+ parts

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$0.074

4,000

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$0.074

Distributors (In-Stock)

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NAC Semi

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

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$0.115

8,000

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$0.115

IBS Electronics

USA . 8,000 parts In-Stock

1+ parts

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$0.096

8,000

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$0.096

ComSIT Distribution GmbH

Germany . 77 parts In-Stock

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77

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.474

100+ parts

$0.431

1k+ parts

$0.389

10k+ parts

-

40

$0.474

$0.431

$0.389

-

Perfect Parts

USA . 11,305 parts In-Stock

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11,305

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Eastek

USA . 4,000 parts In-Stock

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4,000

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Northwest PG Solutions

USA . 2,348 parts In-Stock

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2,348

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Lixinc

USA . 2,217 parts In-Stock

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Native Components

USA . 706 parts In-Stock

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706

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Overview

Enhance your electronics projects with the high-quality 2DA1201YQTC by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers reliable small signal bipolar junction transistors that cater to various applications. With its PNP polarity, single configuration, and surface mount capability, this product offers exceptional performance and versatility. Experience the value and benefits of this transistor with its maximum power dissipation of 1.5W, minimum DC current gain of 120, and maximum collector-emitter voltage of 120V. Trust Diodes Incorporated to provide you with top-notch components for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching applications, making this transistor versatile for various circuit designs.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle higher power loads without overheating, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 120

A high minimum DC current gain ensures stable and predictable amplification, allowing for consistent performance in different circuit configurations.

Maximum Collector-Emitter Voltage: 120 V

The high maximum collector-emitter voltage rating allows for the transistor to be used in circuits with higher voltage requirements.

Maximum Collector Current (IC): 0.8 A

With a high maximum collector current rating, this transistor can handle higher current levels, making it suitable for power applications.

Nominal Transition Frequency (fT): 160 MHz

The high nominal transition frequency indicates fast switching speeds, making this transistor ideal for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DA1201YQTC attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DA1201YQTC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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