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2DA1774QLP-7B

Diodes Incorporated

2DA1774QLP-7B by Diodes Incorporated

2DA1774QLP-7B by Diodes Inc. is a PNP BJT with 3 terminals, 0.25W power dissipation, and 120 min hFE. It operates up to 150°C, with a max VCE of 40V and IC of 0.1A. Ideal for applications requiring high DC current gain in compact electronic devices.

Median Price

$0.420

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,318 parts In-Stock

1+ parts

$0.420

100+ parts

$0.169

1k+ parts

$0.101

10k+ parts

$0.073

6,318

$0.420

$0.169

$0.101

$0.073

DigiKey

USA . 10,000 parts In-Stock

1+ parts

$0.440

100+ parts

$0.169

1k+ parts

$0.112

10k+ parts

$0.080

10,000

$0.440

$0.169

$0.112

$0.080

Verical

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

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$0.063

50,000

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$0.063

Avnet

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 9,468 parts In-Stock

1+ parts

$0.329

100+ parts

$0.165

1k+ parts

$0.066

10k+ parts

$0.041

9,468

$0.329

$0.165

$0.066

$0.041

Chip Stock

USA . 11,350 parts In-Stock

1+ parts

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11,350

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NAC Semi

USA . 10,000 parts In-Stock

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10,000

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ACDS - Activité Composants Distribution Service

France . 9,468 parts In-Stock

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9,468

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Dan-Mar Components

USA . 9,468 parts In-Stock

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9,468

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Perfect Parts

USA . 65,330 parts In-Stock

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65,330

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Eastek

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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$0.063

10,000

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$0.063

iodParts Technologies Inc.

India . 9,468 parts In-Stock

1+ parts

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9,468

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Native Components

USA . 996 parts In-Stock

1+ parts

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996

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Northwest PG Solutions

USA . 151 parts In-Stock

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151

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Overview

Elevate your electronic designs with the 2DA1774QLP-7B by Diodes Incorporated, a top-tier manufacturer known for delivering high-quality components. This small signal PNP BJT is perfect for a wide range of applications, offering reliability and performance that exceed expectations. With a maximum collector-emitter voltage of 40V and a minimum DC current gain of 120, this transistor provides outstanding value and benefits to customers seeking efficiency and precision in their projects. Trust Diodes Incorporated for cutting-edge technology that pushes the boundaries of innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material allows for the transistor to be durable and resistant to external factors, making it reliable for different applications.

Polarity or Channel Type: PNP

Suitable for various circuit designs and can work effectively in different polarities.

Configuration: SINGLE

Simplified circuit design and easy to integrate into different electronic systems.

Surface Mount: YES

Enables easy and efficient mounting on circuit boards, saving space and allowing for compact designs.

Package Shape: RECTANGULAR

Provides a standard shape for easy handling and installation in electronic devices.

No. of Terminals: 3

Simple and straightforward connection setup for circuit integration.

Maximum Power Dissipation (Abs): 0.25 W

Can handle moderate power levels without overheating or damage.

Minimum DC Current Gain (hFE): 120

Provides sufficient amplification for signal processing and control applications.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperature conditions, suitable for various environments.

Maximum Collector-Emitter Voltage: 40 V

Able to withstand high voltage levels, increasing reliability and safety in electronic systems.

Transistor Element Material: SILICON

Silicon material ensures good conductivity and stability, enhancing overall performance.

Maximum Collector Current (IC): 0.1 A

Capable of carrying moderate current loads, suitable for many electronic applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Provides a durable and reliable finish for long-term use and stable connections.

Terminal Position: BOTTOM

Convenient terminal positioning for easy installation and connection in circuit boards.

Case Connection: COLLECTOR

Specific connection for effective signal processing and control within the circuit.

Nominal Transition Frequency (fT): 100 MHz

High-frequency response for fast signal processing and efficient operation in communication and control systems.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DA1774QLP-7B attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DA1774QLP-7B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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