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2DA1213YQ-13

Diodes Incorporated

2DA1213YQ-13 by Diodes Incorporated

2DA1213YQ-13 by Diodes Inc. is a PNP BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 20, and IC of 2A. Suitable for surface mount designs with a max operating temp of 150°C.

Median Price

$0.630

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,698 parts In-Stock

1+ parts

$0.630

100+ parts

$0.302

1k+ parts

$0.195

10k+ parts

$0.145

2,698

$0.630

$0.302

$0.195

$0.145

DigiKey

USA . 2,469 parts In-Stock

1+ parts

$0.750

100+ parts

$0.301

1k+ parts

$0.206

10k+ parts

$0.158

2,469

$0.750

$0.301

$0.206

$0.158

Verical

USA . 257,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.135

257,500

-

-

-

$0.135

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 556 parts In-Stock

1+ parts

$0.391

100+ parts

-

1k+ parts

-

10k+ parts

$0.376

556

$0.391

-

-

$0.376

Northwest PG Solutions

USA . 2,060 parts In-Stock

1+ parts

$0.430

100+ parts

-

1k+ parts

-

10k+ parts

$0.380

2,060

$0.430

-

-

$0.380

iodParts Technologies Inc.

India . 12,663 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,663

-

-

-

-

Overview

Enhance your electronic devices with the high-quality 2DA1213YQ-13 from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated brings you a reliable Small Signal Bipolar Junction Transistor (BJT) that is perfect for switching applications. With a maximum VCEsat of only 0.5V and a maximum Collector-Emitter Voltage of 50V, this PNP transistor offers superior performance and efficiency. Experience the benefits of its compact design, high power dissipation, and wide operating temperature range. Upgrade your projects with the 2DA1213YQ-13 and discover the difference that quality engineering can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components and ensures durability of the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility in circuit design.

Configuration: SINGLE

Simplifies use in circuits and makes it easier to manage connections.

Transistor Application: SWITCHING

Specifically designed for switching applications, offering efficient performance in such scenarios.

Surface Mount: YES

Facilitates easy installation on PCBs and saves space with its surface mount nature.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power loss in switching operations, enhancing energy efficiency.

Package Shape: RECTANGULAR

Helps in easy identification and handling during assembly and maintenance.

Terminal Form: FLAT

Ensures secure and stable connection with the circuit board for reliable performance.

No. of Terminals: 3

Simplified connection setup, reducing error possibilities during installation.

Maximum Power Dissipation (Abs): 1 W

Offers sufficient power handling capability for various applications, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

Compact design ideal for space-constrained applications and easy integration on PCBs.

Minimum DC Current Gain (hFE): 20

Consistent performance with a minimum gain value ensures reliable operation in various circuits.

Maximum Operating Temperature: 150 °C

A wide temperature range makes it suitable for diverse environmental conditions and applications.

Maximum Collector-Base Capacitance: 17 pF

Low capacitance minimizes external interference and ensures stable performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

Safely handles higher voltage levels, making it versatile for different circuit requirements.

Transistor Element Material: SILICON

Silicon material offers reliable performance and durability, ensuring long-term functionality.

Minimum Operating Temperature: -55 °C

Wide operating temperature range enables usage in extreme conditions without performance degradation.

Maximum Collector Current (IC): 2 A

Able to handle high current levels, making it suitable for various applications requiring such capabilities.

Terminal Finish: MATTE TIN

Durable terminal finish for reliable connections and improved soldering quality.

Terminal Position: SINGLE

Simplified connection setup and reduced chances of errors during installation.

Case Connection: COLLECTOR

Clear designation of case connection for proper circuit integration and reduced assembly errors.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperatures for a specified time, ensuring proper soldering and assembly.

Peak Reflow Temperature °C: 260

Capable of withstanding high peak reflow temperatures for reliable surface mount assembly.

Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202

Compliance with industry standards ensures quality, reliability, and consistency in performance.

Nominal Transition Frequency (fT): 160 MHz

High transition frequency enables fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DA1213YQ-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

17 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Reference Standard:

AEC-Q101; IATF 16949; MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2DA1213YQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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