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2DA1774R-7-F

Diodes Incorporated

2DA1774R-7-F by Diodes Incorporated

2DA1774R-7-F by Diodes Inc. is a PNP BJT with 50V VCE, 0.15A IC, and 180 hFE. Ideal for small signal applications in electronics due to its 140MHz fT, -40 to +150°C operating temp range, and compact SOT-23 package.

Median Price

$0.122

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,995 parts In-Stock

1+ parts

$0.288

100+ parts

$0.123

1k+ parts

$0.089

10k+ parts

-

2,995

$0.288

$0.123

$0.089

-

Mouser Electronics

USA . 1,745 parts In-Stock

1+ parts

$0.290

100+ parts

$0.085

1k+ parts

$0.077

10k+ parts

$0.052

1,745

$0.290

$0.085

$0.077

$0.052

DigiKey

USA . 4,489 parts In-Stock

1+ parts

$0.340

100+ parts

$0.132

1k+ parts

$0.087

10k+ parts

$0.062

4,489

$0.340

$0.132

$0.087

$0.062

Verical

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.045

42,000

-

-

-

$0.045

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.035

3,000

-

-

-

$0.035

Farnell

UK . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.122

1k+ parts

$0.067

10k+ parts

$0.059

3,000

-

$0.122

$0.067

$0.059

Element14

Singapore . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.120

1k+ parts

$0.070

10k+ parts

$0.063

3,000

-

$0.120

$0.070

$0.063

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semi Source

USA . 2,124 parts In-Stock

1+ parts

-

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-

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2,124

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-

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Prism Electronics

USA . 45 parts In-Stock

1+ parts

-

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-

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45

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 9,446 parts In-Stock

1+ parts

$0.210

100+ parts

$0.060

1k+ parts

$0.040

10k+ parts

-

9,446

$0.210

$0.060

$0.040

-

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.808

100+ parts

$1.645

1k+ parts

$1.483

10k+ parts

-

5,000

$1.808

$1.645

$1.483

-

Native Components

USA . 720 parts In-Stock

1+ parts

$103.545

100+ parts

-

1k+ parts

-

10k+ parts

$99.403

720

$103.545

-

-

$99.403

Northwest PG Solutions

USA . 1,876 parts In-Stock

1+ parts

$113.899

100+ parts

-

1k+ parts

-

10k+ parts

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1,876

$113.899

-

-

-

Metaverse IC Inc.

Canada . 99,000 parts In-Stock

1+ parts

-

100+ parts

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99,000

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QUARKTWIN TECHNOLOGY LTD

USA . 28,247 parts In-Stock

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28,247

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Lixinc

USA . 14,826 parts In-Stock

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14,826

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.151

1k+ parts

$0.077

10k+ parts

$0.072

3,000

-

$0.151

$0.077

$0.072

GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

-

-

-

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Authorized Procurement Solutions

USA . 1,945 parts In-Stock

1+ parts

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1,945

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Perfect Parts

USA . 560 parts In-Stock

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560

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Overview

Experience the exceptional quality and reliability of Diodes Incorporated with the 2DA1774R-7-F Small Signal Bipolar Junction Transistor. Perfect for a range of applications, this PNP transistor offers high DC current gain, low power dissipation, and a compact design for easy surface mounting. With a maximum operating temperature of 150°C and a collector-emitter voltage of 50V, this transistor delivers outstanding performance in a variety of electronic circuits. Trust Diodes Incorporated to provide top-notch components that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance between durability and cost, making the transistor cost-effective for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits requiring PNP transistors, increasing the versatility of the product.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easy installation, making it ideal for DIY projects or prototyping.

Surface Mount: YES

The surface mount capability makes this transistor suitable for compact electronic devices where space is limited.

Package Shape: RECTANGULAR

The rectangular shape of the package provides more surface area for heat dissipation, improving the reliability and performance of the transistor.

Maximum Power Dissipation (Abs): 0.15 W

With a decent power dissipation capability, this transistor can handle moderate power levels without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 180

The high minimum DC current gain ensures stable amplification and consistent performance in various circuit applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the transistor to withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides a safety margin for voltage spikes and ensures the transistor's reliability in high voltage circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance, good thermal stability, and low noise, making them a preferred choice for various electronic applications.

Maximum Collector Current (IC): 0.15 A

With a maximum collector current of 0.15 A, this transistor can handle moderate current loads in circuit applications, ensuring reliable operation.

Nominal Transition Frequency (fT): 140 MHz

The high transition frequency allows this transistor to operate at higher frequencies, suitable for RF amplification and high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DA1774R-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DA1774R-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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