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2DA1213Y-13

Diodes Incorporated

2DA1213Y-13 by Diodes Incorporated

2DA1213Y-13 by Diodes Inc. is a PNP BJT transistor with 50V VCEO, 2A IC, and 160MHz fT. Ideal for switching applications, it comes in a small outline package with matte tin finish and operates up to 150°C.

Median Price

$0.620

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,700 parts In-Stock

1+ parts

$0.620

100+ parts

$0.245

1k+ parts

$0.166

10k+ parts

$0.126

6,700

$0.620

$0.245

$0.166

$0.126

Mouser Electronics

USA . 4,134 parts In-Stock

1+ parts

$0.620

100+ parts

$0.246

1k+ parts

$0.166

10k+ parts

$0.118

4,134

$0.620

$0.246

$0.166

$0.118

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 2,490 parts In-Stock

1+ parts

$0.560

100+ parts

$0.239

1k+ parts

$0.161

10k+ parts

$0.119

2,490

$0.560

$0.239

$0.161

$0.119

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 143 parts In-Stock

1+ parts

$0.242

100+ parts

-

1k+ parts

-

10k+ parts

$0.232

143

$0.242

-

-

$0.232

Northwest PG Solutions

USA . 1,115 parts In-Stock

1+ parts

$0.266

100+ parts

-

1k+ parts

-

10k+ parts

$0.235

1,115

$0.266

-

-

$0.235

Ampacity Inc.

Singapore . 6,607 parts In-Stock

1+ parts

$0.408

100+ parts

-

1k+ parts

-

10k+ parts

-

6,607

$0.408

-

-

-

Lixinc

USA . 15,659 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,659

-

-

-

-

Perfect Parts

USA . 14,234 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14,234

-

-

-

-

Kepictronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Overview

Discover the power of the 2DA1213Y-13 by Diodes Incorporated, a top-of-the-line Small Signal Bipolar Junction Transistor. With a commitment to quality and innovation, Diodes Incorporated delivers unparalleled performance in switching applications. From its durable plastic/epoxy package body to its PNP polarity and high collector current capability, this transistor offers reliability and efficiency like no other. Experience seamless operation and exceptional functionality with the 2DA1213Y-13, the ultimate choice for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for versatile switching capabilities in circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and layout, making it easier to integrate into projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability makes it easy to mount on PCBs, saving space and enabling mass production.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and alignment in circuit designs.

Terminal Form: FLAT

Flat terminal form simplifies soldering and connection processes.

No. of Terminals: 3

Three terminals allow for easy and precise connections in circuits.

Maximum Power Dissipation (Abs): 1 W

High power dissipation capacity ensures reliable performance under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style enhances space efficiency in circuit designs.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures stable and consistent amplification in circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating of 50V ensures safe operation in high voltage circuits.

Transistor Element Material: SILICON

Silicon material construction provides excellent reliability and performance characteristics.

Maximum Collector Current (IC): 2 A

High maximum collector current rating of 2A allows for handling of larger currents in circuits.

Terminal Finish: MATTE TIN

Matte tin finish offers excellent solderability and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and soldering processes.

Case Connection: COLLECTOR

Case connection at collector terminal enhances thermal dissipation and overall reliability.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures safe soldering processes without damaging the component.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C allows for reliable soldering and rework processes.

Nominal Transition Frequency (fT): 160 MHz

High nominal transition frequency of 160MHz enables fast switching speeds and performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DA1213Y-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DA1213Y-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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