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BLF6G10LS-135RN,11

Ampleon Netherlands B V

BLF6G10LS-135RN,11 by Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: FLAT; Maximum Drain Current (ID): 32 A;

Median Price

$73.630

Lifecycle Status

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5

In-Stock Inventory

1k+

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RFMW

USA . 800 parts In-Stock

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Rochester

USA . 92 parts In-Stock

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100+ parts

$73.630

1k+ parts

$65.880

10k+ parts

$62.010

92

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$73.630

$65.880

$62.010

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Digiode

USA . 3,099 parts In-Stock

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$77.928

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Vyrian

USA . 8,324 parts In-Stock

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Anansix

USA . 2,042 parts In-Stock

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Native Components

USA . 500 parts In-Stock

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$0.611

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$0.611

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Northwest PG Solutions

USA . 277 parts In-Stock

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$0.672

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277

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Corphita

USA . 4,852 parts In-Stock

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$73.827

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4,852

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UNI Independent Distributors

Spain . 3,929 parts In-Stock

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Perfect Parts

USA . 67 parts In-Stock

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Technical Specifications

RF Power Field Effect Transistors (FET) BLF6G10LS-135RN,11 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Ampleon Netherlands B V

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (ID):

32 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFP-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLF6G10LS-135RN,11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Ampleon Netherlands B V

The Leading Global Partner in RF Power Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership. The company envisions to make the world a better place through innovation in high frequency applications based on the advanced GaN and LDMOS technologies. Ampleon has more than 1,600 employees worldwide, dedicated to enable their customers to be successful with RF Power products through close cooperation and partnership, innovation, and excellent execution. Its innovative, yet consistent portfolio offers products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio applications.

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