Loading...

.4 W Small Signal Field Effect Transistors (FET) 25

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N7002DWA-7 by Diodes Incorporated

2N7002DWA-7

Diodes Incorporated

2N7002DWA-7 by Diodes Inc. is an N-channel FET with max drain current of 0.2A and power dissipation of 0.4W. Ideal for surface mount applications, it operates up to 150°C making it suitable for various electronic devices requiring low-power switching capabilities.

.2 A

.2 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

260

N-CHANNEL

.4 W

FET General Purpose Powers

YES

MATTE TIN

30

NTMS10P02R2 by Onsemi

NTMS10P02R2

Onsemi

NTMS10P02R2 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 4.5A Drain Current, and 0.014 ohm On Resistance. With a max operating temperature of 150 °C, this MOSFET is ideal for high-power switching circuits in various electronic devices.

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

20 V

4.5 A

8.8 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

1010 pF

R-PDSO-G8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn80Pb20)

GULL WING

DUAL

30

SWITCHING

SILICON

DMP57D5UV-7 by Diodes Incorporated

DMP57D5UV-7

Diodes Incorporated

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 6 ohm; Terminal Position: DUAL;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.16 A

.16 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMN5L06DMK-7 by Diodes Incorporated

DMN5L06DMK-7

Diodes Incorporated

DMN5L06DMK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.305A max drain current, ideal for switching applications. It features separate configuration with built-in diode, small outline package style, and operates in enhancement mode at up to 150°C.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.305 A

.305 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.4 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN32D2LV-7 by Diodes Incorporated

DMN32D2LV-7

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.4 A

.4 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.4 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMP58D0SV-7 by Diodes Incorporated

DMP58D0SV-7

Diodes Incorporated

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.16 A

.16 A

8 ohm

METAL-OXIDE SEMICONDUCTOR

1.4 pF

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.4 W

Not Qualified

MIL-STD-202

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

J109,126 by NXP Semiconductors

J109,126

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; No. of Elements: 1;

SINGLE

25 V

12 ohm

JUNCTION

15 pF

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.4 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

J112,126 by NXP Semiconductors

J112,126

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Maximum Drain-Source On Resistance: 50 ohm;

SINGLE

40 V

50 ohm

JUNCTION

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.4 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

J113,126 by NXP Semiconductors

J113,126

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 100 ohm; JESD-30 Code: O-PBCY-T3;

SINGLE

40 V

100 ohm

JUNCTION

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.4 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

J175,116 by NXP Semiconductors

J175,116

NXP Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Style (Meter): CYLINDRICAL; Field Effect Transistor Technology: JUNCTION;

SINGLE

30 V

125 ohm

JUNCTION

TO-92

O-PBCY-W3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

P-CHANNEL

.4 W

Not Qualified

FET General Purpose Small Signal

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

J176,126 by NXP Semiconductors

J176,126

NXP Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Minimum DS Breakdown Voltage: 30 V;

SINGLE

30 V

250 ohm

JUNCTION

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

P-CHANNEL

.4 W

Not Qualified

FET General Purpose Small Signal

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

J177,126 by NXP Semiconductors

J177,126

NXP Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Terminal Form: THROUGH-HOLE; JESD-30 Code: O-PBCY-T3;

SINGLE

30 V

300 ohm

JUNCTION

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

P-CHANNEL

.4 W

Not Qualified

FET General Purpose Small Signal

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

NTR1P02T1 by Onsemi

NTR1P02T1

Onsemi

NTR1P02T1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1A, 0.18 ohm RDS(on), and operates in ENHANCEMENT MODE. This small outline transistor with GULL WING terminals is designed for high temperature environments up to 150 °C.

SINGLE WITH BUILT-IN DIODE

20 V

1 A

1 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTR1P02T3 by Onsemi

NTR1P02T3

Onsemi

NTR1P02T3 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 1A Drain Current, and 0.18 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating at up to 150 °C.

SINGLE WITH BUILT-IN DIODE

20 V

1 A

1 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTR4502PT1 by Onsemi

NTR4502PT1

Onsemi

NTR4502PT1 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 1.95A max drain current, and 0.2 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. This small outline transistor has GULL WING terminals and can withstand up to 150°C operating temperature.

SINGLE WITH BUILT-IN DIODE

30 V

1.95 A

1.95 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn80Pb20)

GULL WING

DUAL

30

SWITCHING

SILICON

NTR4502PT3 by Onsemi

NTR4502PT3

Onsemi

NTR4502PT3 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 1.95A max drain current, and 0.2 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. This small outline transistor has a peak reflow temp of 235 °C and is surface mountable.

SINGLE WITH BUILT-IN DIODE

30 V

1.95 A

1.95 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

MGSF1N02ELT1G by Onsemi

MGSF1N02ELT1G

Onsemi

MGSF1N02ELT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.085 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150 °C.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

20 V

.75 A

.75 A

.085 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.4 W

Not Qualified

FET General Purpose Powers

YES

Matte Tin (Sn)

GULL WING

DUAL

SWITCHING

SILICON

NTR4502PT3G by Onsemi

NTR4502PT3G

Onsemi

NTR4502PT3G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max ID of 1.95A and 0.2 ohm RDS(on), operating in enhancement mode at up to 150 °C. This small outline transistor with GULL WING terminals is designed for surface mount configurations.

SINGLE WITH BUILT-IN DIODE

30 V

1.95 A

1.95 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

VN2222LLRLRAG by Onsemi

VN2222LLRLRAG

Onsemi

VN2222LLRLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.15A Drain Current, 7.5 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 0.4W and peak reflow temperature of 260 °C, it offers reliable performance in various electronic circuits.

SINGLE WITH BUILT-IN DIODE

60 V

.15 A

.15 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

TO-92

O-PBCY-T3

e1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.4 W

Not Qualified

FET General Purpose Power

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

NTR1P02T3G by Onsemi

NTR1P02T3G

Onsemi

NTR1P02T3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1A, 0.18 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150 °C operating temperature.

SINGLE WITH BUILT-IN DIODE

20 V

1 A

1 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

J112G by Onsemi

J112G

Onsemi

J112G by Onsemi is a N-CHANNEL FET with 3 terminals in a ROUND package. Operating in DEPLETION MODE, it has a max power dissipation of 0.4W and max drain-source resistance of 50 ohm. Ideal for CHOPPER applications due to its low feedback capacitance of 5pF and temp rating up to 150 °C.

SINGLE

50 ohm

JUNCTION

5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.4 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

CHOPPER

SILICON

J112RL1G by Onsemi

J112RL1G

Onsemi

J112RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max drain-source resistance of 50 ohm. Its cylindrical package body is made of plastic/epoxy material.

EUROPEAN PART NUMBER

SINGLE

50 ohm

JUNCTION

5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.4 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

CHOPPER

SILICON

J112RLRAG by Onsemi

J112RLRAG

Onsemi

J112RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max drain-source resistance of 50 ohm, this transistor has a cylindrical package shape.

SINGLE

50 ohm

JUNCTION

5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.4 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

CHOPPER

SILICON

NTJD1155LT1 by Onsemi

NTJD1155LT1

Onsemi

NTJD1155LT1 by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It has a max drain current of 1.3A, on-resistance of 0.175 ohm, and operates at up to 150°C. The package is a small outline with Gull Wing terminals, made of metal-oxide semiconductor technology.

COMPLEX

8 V

1.3 A

1.3 A

.175 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e0

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL AND P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

SWITCHING

SILICON

DMN31D5UFZQ-7B by Diodes Incorporated

DMN31D5UFZQ-7B

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 1.8 pF;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

.41 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

1.8 pF

R-PBCC-N3

e4

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.4 W

AEC-Q101; IATF 16949

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON