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2 W Small Signal Bipolar Junction Transistors (BJT) 26

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCP51E6327HTSA1 by Infineon Technologies

BCP51E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

40

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

BCP5216E6327HTSA1 by Infineon Technologies

BCP5216E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

2 W

AEC-Q101

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

125 MHz

BCP5310E6327HTSA1 by Infineon Technologies

BCP5310E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

AEC-Q101

Other Transistors

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

2SA1797T100/Q by ROHM

2SA1797T100/Q

ROHM

ROHM 2SA1797T100/Q is a PNP BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 3A. It has a min. DC current gain of 120, ideal for amplifier applications due to its high transition frequency of 200MHz and small outline package style.

COLLECTOR

3 A

50 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

AMPLIFIER

SILICON

200 MHz

2SB1386T100R by ROHM

2SB1386T100R

ROHM

ROHM 2SB1386T100R is a PNP BJT transistor with VCEsat of 1V, hFE of 180, and IC of 5A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 120MHz. Its small outline package makes it suitable for surface mount designs.

COLLECTOR

5 A

20 V

SINGLE

180

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

120 MHz

1 V

2SC5053T100Q by ROHM

2SC5053T100Q

ROHM

ROHM 2SC5053T100Q is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 120, and IC of 1A. Suitable for surface mount designs with a max operating temperature of 150°C.

COLLECTOR

1 A

50 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

150 MHz

.4 V

2SD1664T100Q by ROHM

2SD1664T100Q

ROHM

ROHM 2SD1664T100Q is a NPN BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max voltage of 32V.

COLLECTOR

1 A

32 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

150 MHz

.4 V

DZT3150-13 by Diodes Incorporated

DZT3150-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

25 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DCP52-13 by Diodes Incorporated

DCP52-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP52-16-13 by Diodes Incorporated

DCP52-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP55-13 by Diodes Incorporated

DCP55-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP55-16-13 by Diodes Incorporated

DCP55-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

BCX5610H6327XTSA1 by Infineon Technologies

BCX5610H6327XTSA1

Infineon Technologies

BCX5610H6327XTSA1 by Infineon is a NPN BJT transistor with 80V VCEO, 1A IC, and 2W Ptot. Ideal for amplifier applications, it has a hFE of 63 and fT of 100MHz. This small outline package with flat terminals operates up to 150°C, making it suitable for various electronic designs.

COLLECTOR

1 A

80 V

SINGLE

63

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

Other Transistors

YES

TIN

FLAT

SINGLE

40

AMPLIFIER

SILICON

100 MHz

DZT751-13 by Diodes Incorporated

DZT751-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

145 MHz

2DB1697-13 by Diodes Incorporated

2DB1697-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

12 V

SINGLE

270

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

140 MHz

2DB1714-13 by Diodes Incorporated

2DB1714-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

30 V

SINGLE

270

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

200 MHz

2DD2661-13 by Diodes Incorporated

2DD2661-13

Diodes Incorporated

2DD2661-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 2W, hFE of 270, and fT of 170MHz. Ideal for switching applications, it has a max collector-emitter voltage of 12V and max collector current of 2A. Suitable for surface mount with matte tin finish in a small outline package style.

COLLECTOR

2 A

12 V

SINGLE

270

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

170 MHz

2DD2678-13 by Diodes Incorporated

2DD2678-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

12 V

SINGLE

270

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

170 MHz

2SCR514PT100 by ROHM

2SCR514PT100

ROHM

ROHM 2SCR514PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.7A. It has a min. DC current gain of 120, suitable for switching applications in small outline packages at up to 150°C operating temperature.

COLLECTOR

.7 A

80 V

SINGLE

120

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

320 MHz

2SCR554PT100 by ROHM

2SCR554PT100

ROHM

ROHM's 2SCR554PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1.5A, ideal for switching applications. With a min. DC current gain of 120 and nominal transition frequency of 300MHz, it offers high performance in a small outline package suitable for surface mount technology.

COLLECTOR

1.5 A

80 V

SINGLE

120

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

2SAR533PT100 by ROHM

2SAR533PT100

ROHM

ROHM 2SAR533PT100 is a PNP BJT transistor with max. power dissipation of 2W, hFE of 180, and max. collector-emitter voltage of 50V. Ideal for switching applications in small outline packages, it operates at up to 150°C with a max. collector current of 3A and transition frequency of 300MHz.

COLLECTOR

3 A

50 V

SINGLE

180

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

2SCR512PT100 by ROHM

2SCR512PT100

ROHM

ROHM 2SCR512PT100 is a NPN BJT transistor with max. collector-emitter voltage of 30V and max. collector current of 2A. It has a min. DC current gain of 200, making it ideal for switching applications at up to 150°C operating temperature. The small outline package with flat terminals and surface mount capability enhances its versatility in various electronic designs.

COLLECTOR

2 A

30 V

SINGLE

200

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

320 MHz

BCP5310H6327XTSA1 by Infineon Technologies

BCP5310H6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

Other Transistors

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

BCP5316H6327XTSA1 by Infineon Technologies

BCP5316H6327XTSA1

Infineon Technologies

BCP5316H6327XTSA1 by Infineon is a PNP BJT with 4 terminals, 2W power dissipation, and 80V collector-emitter voltage. Ideal for amplifier applications, it has a min hFE of 100 and operates up to 150°C. This surface-mount transistor in a small outline package offers high performance with a transition frequency of 125MHz.

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

Other Transistors

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

2SAR554P5T100 by ROHM

2SAR554P5T100

ROHM

ROHM 2SAR554P5T100 is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1.5A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max fT of 340MHz.

COLLECTOR

1.5 A

15 pF

80 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

YES

TIN

FLAT

SINGLE

10

SWITCHING

SILICON

340 MHz

.4 V

FCX458QTA by Diodes Incorporated

FCX458QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .225 A;

COLLECTOR

.225 A

5 pF

400 V

SINGLE

15

R-PSSO-F3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SILICON

50 MHz

.5 V