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.3 A Small Signal Bipolar Junction Transistors (BJT) 19

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MCH6542-TL-E by Onsemi

MCH6542-TL-E

Onsemi

MCH6542-TL-E by Onsemi is a Small Signal BJT available in NPN and PNP types. With a max power dissipation of 0.55W, min hFE of 300, and max IC of 0.3A, it operates up to 150 °C. Ideal for surface mount applications with Tin/Bismuth finish, this transistor suits various electronic designs.

.3 A

300

e6

1

150 Cel

NPN AND PNP

.55 W

BIP General Purpose Small Signal

YES

Tin/Bismuth (Sn/Bi)

SMMBTA14LT3G by Onsemi

SMMBTA14LT3G

Onsemi

SMMBTA14LT3G by Onsemi is a NPN BJT transistor with max power dissipation of 0.3W, hFE of 5000, and fT of 125MHz. Ideal for applications requiring high DC current gain and fast transition frequency in surface mount configurations.

.3 A

SINGLE

5000

e3

1

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

MATTE TIN

30

125 MHz

MMSTA28T146 by ROHM

MMSTA28T146

ROHM

ROHM MMSTA28T146 is a NPN BJT transistor with max VCEsat of 1.5V, hFE of 10000, and fT of 200MHz. Ideal for amplifier applications due to its small outline package style and high transition frequency. Suitable for surface mount designs with Gull Wing terminals and operates up to 150°C.

.3 A

8 pF

80 V

SINGLE

10000

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

200 MHz

1.5 V

2N5401,116 by NXP Semiconductors

2N5401,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .63 W; Maximum Collector Current (IC): .3 A;

.3 A

6 pF

150 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.63 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.5 V

2N5401,412 by NXP Semiconductors

2N5401,412

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .63 W; Maximum Collector Current (IC): .3 A;

.3 A

6 pF

150 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.63 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.5 V

2N5551,116 by NXP Semiconductors

2N5551,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .3 A;

.3 A

6 pF

160 V

SINGLE

30

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.2 V

PMBT5401,215 by NXP Semiconductors

PMBT5401,215

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .3 A;

.3 A

6 pF

150 V

SINGLE

50

TO-236AB

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.35 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.5 V

PMBT5401,235 by NXP Semiconductors

PMBT5401,235

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .3 A; Qualification: Not Qualified;

.3 A

6 pF

150 V

SINGLE

50

TO-236AB

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.5 V

MPSA92-AP by Micro Commercial Components

MPSA92-AP

Micro Commercial Components

MPSA92-AP by Micro Commercial Components is a PNP BJT with hFE of 80, VCE of 300V, and fT of 50MHz. Ideal for low-power applications in electronics due to its high voltage and current capabilities.

.3 A

300 V

SINGLE

80

TO-92

O-PBCY-W3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

Not Qualified

NO

Matte Tin (Sn)

WIRE

BOTTOM

10

SILICON

50 MHz

KSD227YBU by Fairchild Semiconductor

KSD227YBU

Fairchild Semiconductor

Fairchild Semiconductor's KSD227YBU is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min DC current gain of 120 and can handle a max collector current of 0.3 A. With a max operating temperature of 150°C and collector-emitter voltage of 25 V, it comes in a cylindrical package suitable for through-hole mounting.

.3 A

25 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.4 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

MMBTA13-7 by Diodes Incorporated

MMBTA13-7

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .3 A;

.3 A

30 V

DARLINGTON

10000

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

MMBTA14-7 by Diodes Incorporated

MMBTA14-7

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .3 A;

.3 A

30 V

DARLINGTON

20000

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

MPSA12RLRA by Onsemi

MPSA12RLRA

Onsemi

MPSA12RLRA by Onsemi is a NPN Darlington BJT with hFE of 20000, VCE of 20V, and IC of 0.3A. It is used in applications requiring high DC current gain and operates up to 150 °C. Ideal for amplification tasks due to its high transition frequency of 100MHz.

.3 A

20 V

DARLINGTON

20000

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

Not Qualified

Other Transistors

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

BOTTOM

30

SILICON

100 MHz

MPS3646G by Onsemi

MPS3646G

Onsemi

MPS3646G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 15V and max collector current of 0.3A. With a transition frequency of 350MHz, it offers fast turn on/off times making it suitable for high-speed circuits.

.3 A

15 V

SINGLE

15

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

350 MHz

28 ns

18 ns

MPSA44RLRAG by Onsemi

MPSA44RLRAG

Onsemi

MPSA44RLRAG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a min. DC current gain of 40 and max. operating temp of 150 °C, making it suitable for high-power dissipation up to 0.625W in cylindrical package style.

.3 A

400 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

20 MHz

MPSA44RL1G by Onsemi

MPSA44RL1G

Onsemi

MPSA44RL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. Featuring a min. DC current gain of 40 and max. power dissipation of 0.625W, it operates at up to 150 °C. Its through-hole package style makes it suitable for various electronic circuits.

EUROPEAN PART NUMBER

.3 A

400 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

BC447G by Onsemi

BC447G

Onsemi

BC447G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 1.5W, and max collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor with hFE of at least 50, operating up to 150 °C, and featuring a nominal transition frequency of 200MHz.

.3 A

80 V

SINGLE

50

TO-226AA

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

200 MHz

MPS3646RLRAG by Onsemi

MPS3646RLRAG

Onsemi

MPS3646RLRAG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 15V and max current of 0.3A. It has a min DC current gain of 15, ideal for switching applications with a transition frequency of 350MHz. The package style is cylindrical, suitable for through-hole mounting in various electronic circuits.

.3 A

15 V

SINGLE

15

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

350 MHz

28 ns

18 ns

2SD2705STP by ROHM

2SD2705STP

ROHM

ROHM's 2SD2705STP is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 820, and fT of 35MHz. Ideal for amplifier applications due to its single configuration and max. collector current of 0.3A at an operating temp of up to 150°C in a cylindrical package with through-hole terminals.

.3 A

20 V

SINGLE

820

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

35 MHz