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.025 A RF Small Signal Bipolar Junction Transistors (BJT) 16

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BF517E6327HTSA1 by Infineon Technologies

BF517E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2000 MHz; Maximum Power Dissipation (Abs): .28 W; Maximum Collector Current (IC): .025 A;

.025 A

.75 pF

15 V

SINGLE

40

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.28 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

2000 MHz

BFS17WE6327HTSA1 by Infineon Technologies

BFS17WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Base Capacitance: .8 pF;

.025 A

.8 pF

15 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

AMPLIFIER

SILICON

2500 MHz

BFS17SH6327XTSA1 by Infineon Technologies

BFS17SH6327XTSA1

Infineon Technologies

The Infineon Technologies BFS17SH6327XTSA1 is an NPN RF BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 15V, fT of 2500 MHz, and a small outline package style for surface mount assembly.

.025 A

.8 pF

15 V

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

2500 MHz

BFS17WH6327XTSA1 by Infineon Technologies

BFS17WH6327XTSA1

Infineon Technologies

BFS17WH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 15V and a nominal transition frequency of 2500MHz. It is commonly used as an amplifier in applications requiring ultra high frequency band performance.

.025 A

.8 pF

15 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

2500 MHz

BF199,112 by NXP Semiconductors

BF199,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .025 A;

.025 A

.5 pF

25 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

550 MHz

BFR92A,215 by NXP Semiconductors

BFR92A,215

NXP Semiconductors

NXP Semiconductors' BFR92A,215 is a NPN RF BJT transistor with 5000 MHz fT. It has a max power dissipation of 0.35 W and operates up to 175°C. Ideal for L Band applications, this transistor offers high gain (hFE=40) and low collector current (IC=0.025 A).

LOW NOISE

.025 A

15 V

SINGLE

40

L BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR92AW,115 by NXP Semiconductors

BFR92AW,115

NXP Semiconductors

NXP Semiconductors' BFR92AW,115 is an NPN RF BJT with a max fT of 5000 MHz. It has a max power dissipation of 0.3 W and operates in the ultra-high frequency band. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.

HIGH RELIABILITY

.025 A

15 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFS17,215 by NXP Semiconductors

BFS17,215

NXP Semiconductors

The NXP Semiconductors BFS17,215 is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 1600 MHz and can handle a collector-emitter voltage of 15V. This transistor is commonly used in amplifier applications due to its ultra-high frequency band capabilities.

.025 A

1.5 pF

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

1600 MHz

BFS17A,215 by NXP Semiconductors

BFS17A,215

NXP Semiconductors

NXP Semiconductors' BFS17A,215 is an NPN RF BJT transistor with a max fT of 2800 MHz. It has a small outline package style and can handle up to 15V collector-emitter voltage. Ideal for ultra-high frequency amplifier applications in surface mount configurations.

.025 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

2800 MHz

BFT92,215 by NXP Semiconductors

BFT92,215

NXP Semiconductors

NXP Semiconductors' BFT92,215 is a PNP RF BJT with 3 terminals. It operates in the ultra-high frequency band up to 5 GHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, this transistor can handle a max collector-emitter voltage of 15V at an operating temp of 150°C.

LOW NOISE

.025 A

15 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT92W,115 by NXP Semiconductors

BFT92W,115

NXP Semiconductors

NXP Semiconductors' BFT92W,115 is a PNP RF BJT transistor with 3 terminals. It operates in L Band with fT of 4000 MHz and hFE of 20. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 15V collector-emitter voltage.

HIGH RELIABILITY

.025 A

15 V

SINGLE

20

L BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

4000 MHz

BFR92AW,135 by NXP Semiconductors

BFR92AW,135

NXP Semiconductors

NXP Semiconductors' BFR92AW,135 is an NPN RF BJT transistor with a max fT of 5000 MHz. It's ideal for ultra-high frequency band applications like amplifiers due to its small outline package and high hFE of 40. With a max power dissipation of 0.3 W and VCE of 15V, it operates at up to 150°C ambient temperature.

HIGH RELIABILITY

.025 A

15 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

MMBTH10-4LT1 by Onsemi

MMBTH10-4LT1

Onsemi

MMBTH10-4LT1 by Onsemi is an NPN RF BJT with a max fT of 800 MHz. It has a max IC of 0.025 A and hFE of 120, suitable for UHF applications. This small outline transistor operates up to 150 °C, making it ideal for high-frequency circuits in compact designs.

.025 A

.7 pF

25 V

SINGLE

120

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.3 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

800 MHz

BFR92A,235 by NXP Semiconductors

BFR92A,235

NXP Semiconductors

NXP Semiconductors' BFR92A,235 is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a max power dissipation of 0.3W and operates up to 150°C. Ideal for amplifier applications in L Band due to its small outline package and high transition frequency.

LOW NOISE

.025 A

15 V

SINGLE

65

L BAND

TO-236AB

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

IEC-134

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFS17,235 by NXP Semiconductors

BFS17,235

NXP Semiconductors

The NXP Semiconductors BFS17,235 is a RF BJT transistor with NPN polarity and single configuration. It operates in the ultra high frequency band up to 1600 MHz, suitable for amplifier applications. With a max power dissipation of 0.3 W and operating temperature of 150°C, it offers reliable performance in small outline packages.

.025 A

15 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

IEC-134

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

1600 MHz

BF886H6327XTSA1 by Infineon Technologies

BF886H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .025 A; Additional Features: LOW NOISE;

LOW NOISE

.025 A

4 V

SINGLE

L BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

45000 MHz