Loading...

48.4 W Power Field Effect Transistors (FET) 14

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN013-100XS,127 by NXP Semiconductors

PSMN013-100XS,127

NXP Semiconductors

PSMN013-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 35.2 A and power dissipation of 48.4 W, operating up to 175 °C. Perfect for efficient energy conversion in various electronic devices.

SINGLE

35.2 A

35.2 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

48.4 W

FET General Purpose Power

NO

NTB18N06LT4 by Onsemi

NTB18N06LT4

Onsemi

NTB18N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Max Pulsed Drain Current and 61mJ Avalanche Energy Rating. With a compact RECTANGULAR package and ENHANCEMENT MODE operation, it offers efficient power management in various electronic devices.

LOGIC LEVEL COMPATIBLE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTB18N06L by Onsemi

NTB18N06L

Onsemi

NTB18N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, suitable for SWITCHING applications. It features a max IDM of 45A and EAS of 61mJ, making it ideal for high-power requirements. With a low 0.1 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C, offering reliable performance in various electronic systems.

LOGIC LEVEL COMPATIBLE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTP18N06L by Onsemi

NTP18N06L

Onsemi

NTP18N06L by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 45A IDM, and 0.1 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175 °C, making it suitable for high-power tasks.

LOGIC LEVEL COMPATIBLE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

NO

Tin/Lead (Sn80Pb20)

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

NTB18N06 by Onsemi

NTB18N06

Onsemi

NTB18N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and 48.4W power dissipation in a SMALL OUTLINE package.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTP18N06 by Onsemi

NTP18N06

Onsemi

NTP18N06 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with built-in diode in a RECTANGULAR package. Operating in enhancement mode at up to 175 °C, this MOSFET has a max power dissipation of 48.4W.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB18N06LT4G by Onsemi

NTB18N06LT4G

Onsemi

NTB18N06LT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.1 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating at 175 °C max temp, it offers high power dissipation of 48.4W in a SMALL OUTLINE package.

LOGIC LEVEL COMPATIBLE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTP18N06G by Onsemi

NTP18N06G

Onsemi

NTP18N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS(on). It is used for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 48.4W at 175 °C.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTP18N06LG by Onsemi

NTP18N06LG

Onsemi

NTP18N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.

LOGIC LEVEL COMPATIBLE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

NTB18N06G by Onsemi

NTB18N06G

Onsemi

NTB18N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features GULL WING terminals in a SMALL OUTLINE package style for surface mount assembly.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTB18N06T4G by Onsemi

NTB18N06T4G

Onsemi

NTB18N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, GULL WING terminals, and 175 °C Max Temp make it suitable for various power electronics designs.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTB18N06LG by Onsemi

NTB18N06LG

Onsemi

NTB18N06LG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 45A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.1 ohm RDS(on), and 48.4W Pdiss in a small outline package.

LOGIC LEVEL COMPATIBLE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48.4 W

45 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

FDD9411L-F085 by Onsemi

FDD9411L-F085

Onsemi

FDD9411L-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 25A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.0115 ohm.

22 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

25 A

.0115 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48.4 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

36 ns

17 ns

FDD9511L-F085 by Onsemi

FDD9511L-F085

Onsemi

FDD9511L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 25A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an EAS of 25mJ.

25 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

25 A

.021 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

48.4 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

235 ns

45 ns