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SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Power Field Effect Transistors (FET) 15

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH020P120MNF1PG by Onsemi

NXH020P120MNF1PG

Onsemi

NXH020P120MNF1PG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 153A IDM, and 0.03ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode & thermistor. Operating in enhancement mode, this MOSFET has a max power dissipation of 119W and operates b/w -40 to 175 °C.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

51 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

19 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

119 W

153 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH040P120MNF1PG by Onsemi

NXH040P120MNF1PG

Onsemi

NXH040P120MNF1PG by Onsemi is an N-CHANNEL FET with 1200V DS breakdown voltage and 74A IDM. Ideal for switching applications, it features a package style of FLANGE MOUNT, operating temperature range of -40 to 175 °C, and 0.056 ohm max drain-source resistance.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

30 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

74 W

74 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

BSM300D12P2E001 by ROHM

BSM300D12P2E001

ROHM

ROHM BSM300D12P2E001 is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 600A IDM, and 300A ID. It features SERIES CONNECTED configuration for SWITCHING applications. The transistor has 2 elements with built-in diode and thermistor in a RECTANGULAR package style.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

300 A

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X11

2

11

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

600 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

FF11MR12W1M1B11BOMA1 by Infineon Technologies

FF11MR12W1M1B11BOMA1

Infineon Technologies

Infineon's FF11MR12W1M1B11BOMA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, 200A IDM, and -40°C min. operating temp. Ideal for switching applications, it features series connected elements with built-in diode and thermistor in a rectangular package style.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

100 A

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X18

2

18

ENHANCEMENT MODE

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

FF8MR12W2M1B11BOMA1 by Infineon Technologies

FF8MR12W2M1B11BOMA1

Infineon Technologies

Infineon's FF8MR12W2M1B11BOMA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features series connected, center tap configuration with 2 elements, built-in diode and thermistor. With max pulsed drain current of 300A, this MOSFET operates in enhancement mode at temperatures ranging from -40 to 150°C.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X35

2

35

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

FF45MR12W1M1B11BOMA1 by Infineon Technologies

FF45MR12W1M1B11BOMA1

Infineon Technologies

Infineon's FF45MR12W1M1B11BOMA1 is a N-Channel FET with 1200V DS Breakdown Voltage, 5.55V VCEsat, and 0.045ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with built-in diode and thermistor. Operating in enhancement mode, this FET has a max pulsed drain current of 50A and can withstand temperatures from -40 to 150°C.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

.045 ohm

METAL-OXIDE SEMICONDUCTOR

14 pF

20 V

R-XUFM-X10

2

10

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-Channel

50 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

55300 ns

14100 ns

5.55 V

FF6MR12W2M1B11BOMA1 by Infineon Technologies

FF6MR12W2M1B11BOMA1

Infineon Technologies

Infineon's FF6MR12W2M1B11BOMA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, 400A IDM, and 0.00563 ohm RDS(on). Ideal for high-power switching applications due to its series connected configuration, built-in diode, and thermistor. Operating in enhancement mode with fast turn-on/off times of 39.1ns and 92.6ns respectively.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

200 A

.00563 ohm

METAL-OXIDE SEMICONDUCTOR

112 pF

R-XUFM-X35

1

35

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

400 A

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

92.6 ns

39.1 ns

CAB760M12HM3 by Wolfspeed

CAB760M12HM3

Wolfspeed

Wolfspeed's CAB760M12HM3 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 2 elements with built-in diode and thermistor, max pulsed drain current of 1530A, and 0.00173 ohm max drain-source on resistance. Operates in enhancement mode at -40 to 175°C temperature range.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

.00173 ohm

METAL-OXIDE SEMICONDUCTOR

90 pF

R-XUFM-X9

2

9

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1530 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

CAB011M12FM3 by Wolfspeed

CAB011M12FM3

Wolfspeed

Wolfspeed's CAB011M12FM3 is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 0.014 ohm RDS(on), and 218A IDM. Ideal for SWITCHING applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode, and thermistor. Operating in ENHANCEMENT MODE, this FET has a max temp of 150°C and uses SILICON CARBIDE technology.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

.014 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

R-XUFM-X9

2

9

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

218 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH010P120MNF1PTNG by Onsemi

NXH010P120MNF1PTNG

Onsemi

NXH010P120MNF1PTNG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features SERIES CONNECTED configuration with METAL-OXIDE SEMICONDUCTOR technology. Operating from -40 to 175 °C, this RECTANGULAR package has 18 terminals and a max power dissipation of 250W.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

114 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

39 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

342 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH010P120MNF1PNG by Onsemi

NXH010P120MNF1PNG

Onsemi

NXH010P120MNF1PNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode & thermistor. Operating in enhancement mode, it has a max power dissipation of 250W and operates b/w -40 to 175 °C.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

114 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

39 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

342 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH006P120MNF2PTG by Onsemi

NXH006P120MNF2PTG

Onsemi

NXH006P120MNF2PTG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 912A IDM, and 0.0072 ohm RDS(on). It is used for switching applications in power systems. The transistor features a rectangular package shape, 36 terminals, and operates in enhancement mode up to 175°C.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

304 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

49 pF

R-XUFM-X36

2

36

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

950 W

912 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

MSCSM170AM11CT3AG by Microchip Technology

MSCSM170AM11CT3AG

Microchip Technology

MSCSM170AM11CT3AG by Microchip Technology is a N-CHANNEL FET with 1700V DS Breakdown Voltage, 480A IDM, and 0.0113 ohm RDS(on). It is used for SWITCHING applications in SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features METAL-OXIDE SEMICONDUCTOR technology and SILICON CARBIDE material.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1700 V

240 A

.0113 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-XUFM-X25

2

25

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

480 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH010P120MNF1PTG by Onsemi

NXH010P120MNF1PTG

Onsemi

NXH010P120MNF1PTG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 342A IDM, and 0.014 ohm RDS(on). It is used for SWITCHING applications in SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features METAL-OXIDE SEMICONDUCTOR tech and SILICON CARBIDE material.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

114 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

39 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

342 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH010P120MNF1PG by Onsemi

NXH010P120MNF1PG

Onsemi

NXH010P120MNF1PG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for switching applications in power electronics due to its SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features a METAL-OXIDE SEMICONDUCTOR technology and built-in diode & thermistor.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

114 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

39 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

342 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE