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30 W Power Bipolar Junction Transistors (BJT) 16

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TTC3710B by Toshiba

TTC3710B

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 12 A;

ISOLATED

12 A

80 V

SINGLE

40

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

80 MHz

2SD2396K by ROHM

2SD2396K

ROHM

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

ISOLATED

3 A

60 V

SINGLE

1000

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

30 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

40 MHz

BUL742CFP by STMicroelectronics

BUL742CFP

STMicroelectronics

BUL742CFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 30W, a collector-emitter voltage of 400V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

4 A

400 V

SINGLE

25

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

30 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BULD741-1 by STMicroelectronics

BULD741-1

STMicroelectronics

BULD741-1 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 30W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

2.5 A

400 V

SINGLE

25

TO-251

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BDW93CFTU by Fairchild Semiconductor

BDW93CFTU

Fairchild Semiconductor

Fairchild Semiconductor's BDW93CFTU is a NPN power BJT with 100V VCEO, 12A IC, and 30W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150°C, it offers high DC current gain of hFE ≥100.

ISOLATED

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE

100

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJF3055G by Onsemi

MJF3055G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 10 A;

ISOLATED

10 A

90 V

SINGLE

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

UL RECOGNIZED

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 MHz

D44C12G by Onsemi

D44C12G

Onsemi

D44C12G by Onsemi is a NPN Power BJT with 80V VCEO, 4A IC, and 30W Ptot. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. The transistor comes in a plastic package with through-hole terminals.

COLLECTOR

4 A

80 V

SINGLE

20

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

30 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

40 MHz

D45C12G by Onsemi

D45C12G

Onsemi

D45C12G by Onsemi is a PNP BJT transistor with 80V VCEO, 4A IC, and 30W power dissipation. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

4 A

80 V

SINGLE

20

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

30 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

40 MHz

MJF127G by Onsemi

MJF127G

Onsemi

The Onsemi MJF127G is a PNP Power BJT with Darlington configuration, built-in diode, and resistor. It has a max power dissipation of 30W and can handle up to 5A collector current. Ideal for switching applications in various industries due to its high DC current gain of 2000.

ISOLATED

5 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

30 W

Not Qualified

UL RECOGNIZED

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2N4918G by Onsemi

2N4918G

Onsemi

The Onsemi 2N4918G is a PNP power BJT with max. collector-emitter voltage of 40V, max. collector current of 3A, and max. power dissipation of 30W. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.

3 A

40 V

SINGLE

10

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

2N4921G by Onsemi

2N4921G

Onsemi

2N4921G by Onsemi is a NPN BJT transistor with max. power dissipation of 30W, max. collector-emitter voltage of 40V, and max. collector current of 3A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package shape.

3 A

40 V

SINGLE

10

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

2N6487G by Onsemi

2N6487G

Onsemi

The Onsemi 2N6487G is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 15A. It has a min. DC current gain of 5, suitable for switching applications with a max. power dissipation of 30W at an operating temp. of 150°C.

COLLECTOR

15 A

60 V

SINGLE

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

5 MHz

2N6490G by Onsemi

2N6490G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 15 A;

COLLECTOR

15 A

60 V

SINGLE

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

30 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

5 MHz

BD179G by Onsemi

BD179G

Onsemi

The Onsemi BD179G is a NPN BJT transistor with 3 terminals, capable of handling up to 30W power dissipation. With a max collector-emitter voltage of 80V and max current of 3A, it's ideal for amplifier applications. Operating at temperatures up to 150 °C, this silicon-based transistor has a transition frequency of 3MHz.

3 A

80 V

SINGLE

15

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

3 MHz

TIP30G by Onsemi

TIP30G

Onsemi

TIP30G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 30W, max collector-emitter voltage of 40V, and max collector current of 1A. With a min hFE of 15 and operating temp up to 150 °C, it's suitable for various electronic circuits requiring high power handling capabilities.

COLLECTOR

1 A

40 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

30 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP29CPBFREE by Central Semiconductor

TIP29CPBFREE

Central Semiconductor

TIP29CPBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.7V, hFE of 15, and IC of 1A. Ideal for switching applications, it has a max power dissipation of 30W and operates b/w -65 to 150°C. Its through-hole terminals make it suitable for various electronic devices.

1 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

30 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

.7 V