Loading...

75 A Insulated Gate Bipolar Transistors (IGBT) 39

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM75GAR120DN2HOSA1 by Infineon Technologies

BSM75GAR120DN2HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: UNSPECIFIED;

75 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

BSM75GB120DN2HOSA1 by Infineon Technologies

BSM75GB120DN2HOSA1

Infineon Technologies

Infineon's BSM75GB120DN2HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max Collector-Emitter Voltage of 1200V and Max Collector Current of 75A, it offers fast switching with Nominal Turn Off Time of 520ns and Nominal Turn On Time of 100ns. The package style is FLANGE MOUNT with 7 terminals in an ISOLATED case connection.

ISOLATED

75 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

520 ns

100 ns

FS50R12KE3BOSA1 by Infineon Technologies

FS50R12KE3BOSA1

Infineon Technologies

FS50R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 610 ns and ton of 140 ns, suitable for high-power applications. With a Vce of 1200V and IC of 75A, it operates at up to 150°C making it ideal for industrial power systems.

ISOLATED

75 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X28

6

28

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

140 ns

SIGC61T60NCX1SA1 by Infineon Technologies

SIGC61T60NCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;

75 A

600 V

SINGLE

R-XUUC-N4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

205 ns

90 ns

FP50R12KT3BOSA1 by Infineon Technologies

FP50R12KT3BOSA1

Infineon Technologies

Infineon's FP50R12KT3BOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 75A max collector current, and 610ns nominal turn off time. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.

ISOLATED

75 A

1200 V

COMPLEX

R-XUFM-X35

7

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

140 ns

IHW40T120FKSA1 by Infineon Technologies

IHW40T120FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;

COLLECTOR

75 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

700 ns

92 ns

BSM50GB60DLCHOSA1 by Infineon Technologies

BSM50GB60DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON; Nominal Turn Off Time (toff): 151 ns;

ISOLATED

75 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

151 ns

52 ns

IKW40N120T2FKSA1 by Infineon Technologies

IKW40N120T2FKSA1

Infineon Technologies

IKW40N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 75A IC, and 600ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures reliability in high-temp environments up to 175°C.

COLLECTOR

75 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

600 ns

60 ns

IGW40T120FKSA1 by Infineon Technologies

IGW40T120FKSA1

Infineon Technologies

IGW40T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 75A. It is designed for power control applications and has a nominal turn-off time of 700ns.

COLLECTOR

75 A

1200 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

700 ns

92 ns

FP50R12KE3BOSA1 by Infineon Technologies

FP50R12KE3BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Terminal Form: UNSPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

ISOLATED

75 A

1200 V

COMPLEX

R-XUFM-X35

7

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

135 ns

FS75R06KE3BOSA1 by Infineon Technologies

FS75R06KE3BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Terminal Form: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

ISOLATED

75 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X28

6

28

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

320 ns

45 ns

FP75R12KT4B15BOSA1 by Infineon Technologies

FP75R12KT4B15BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn Off Time (toff): 620 ns;

ISOLATED

75 A

1200 V

COMPLEX

R-XUFM-X35

7

35

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

210 ns

FP50R07U1E4BPSA1 by Infineon Technologies

FP50R07U1E4BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 650 V;

ISOLATED

75 A

650 V

COMPLEX

R-XUFM-X23

7

23

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

274 ns

40 ns

FS3L50R07W2H3FB11BOMA1 by Infineon Technologies

FS3L50R07W2H3FB11BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: UNSPECIFIED;

ISOLATED

75 A

650 V

COMPLEX

R-XUFM-X32

12

32

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

346 ns

84 ns

IXGM40N60A by IXYS Corporation

IXGM40N60A

IXYS Corporation

IXYS Corporation's IXGM40N60A is an N-CHANNEL IGBT with 600V VCE, 75A IC, and 3V VCEsat. Ideal for POWER CONTROL applications, it has a single configuration, 900ns toff, and 300ns ton. The METAL package with PIN/PEG terminals can handle up to 250W power dissipation at 150°C ambient temperature.

HIGH SPEED

COLLECTOR

75 A

600 V

SINGLE

5 V

20 V

TO-204AE

O-MBFM-P2

1

2

150 Cel

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

POWER CONTROL

SILICON

900 ns

300 ns

3 V

IXSH45N120 by IXYS Corporation

IXSH45N120

IXYS Corporation

IXYS Corporation's IXSH45N120 is an N-CHANNEL IGBT transistor with 1200V VCE, 75A IC, and 3V VCEsat. Ideal for MOTOR CONTROL applications, it has a toff of 1650ns and ton of 330ns, housed in a PLASTIC/EPOXY package with FLANGE MOUNT style.

COLLECTOR

75 A

1200 V

SINGLE

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

1650 ns

330 ns

3 V

IXSH45N100 by IXYS Corporation

IXSH45N100

IXYS Corporation

IXYS Corporation's IXSH45N100 is an N-CHANNEL IGBT with 1000V VCEsat, 75A IC, and 300W power dissipation. Ideal for POWER CONTROL applications, it has a turn-off time of 2750ns and operates up to 150°C.

COLLECTOR

75 A

1000 V

SINGLE

1500 ns

7 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

2750 ns

400 ns

2.7 V

IXGN50N60BD2 by IXYS Corporation

IXGN50N60BD2

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER;

FAST

ISOLATED

75 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

200 ns

50 ns

2.5 V

IXGH50N60A by IXYS Corporation

IXGH50N60A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Transistor Application: MOTOR CONTROL;

FAST

COLLECTOR

75 A

600 V

SINGLE

200 ns

5 V

20 V

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

880 ns

290 ns

2.7 V

FGH60N6S2 by Fairchild Semiconductor

FGH60N6S2

Fairchild Semiconductor

FGH60N6S2 by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 625W. It has a nominal turn-off time of 187ns, making it suitable for power control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, ideal for high-power applications in industrial settings.

LOW CONDUCTION LOSS

COLLECTOR

75 A

600 V

SINGLE

90 ns

5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

625 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

187 ns

59 ns

IXGH40N60B2D1 by IXYS Corporation

IXGH40N60B2D1

IXYS Corporation

IXGH40N60B2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 75A max collector current, and 38ns turn on time. Ideal for power control applications due to its single configuration with built-in diode and plastic/epoxy package body material.

COLLECTOR

75 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

38 ns

IXGH40N60B2 by IXYS Corporation

IXGH40N60B2

IXYS Corporation

IXGH40N60B2 by IXYS Corp is an N-CHANNEL IGBT with 600V VCE, 75A IC, and 38ns ton. Ideal for POWER CONTROL applications due to its fast switching speed and high collector current capacity. The PLASTIC/EPOXY package with FLANGE MOUNT style ensures reliable performance in various environments.

COLLECTOR

75 A

600 V

SINGLE

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

38 ns

IXGN60N60C2D1 by IXYS Corporation

IXGN60N60C2D1

IXYS Corporation

IXYS Corporation's IXGN60N60C2D1 is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 75A, and Pmax of 480W. Ideal for power control applications due to its fast turn-off time (toff) of 210ns and high operating temperature up to 150°C. The device features a built-in diode, UL recognized, and is flange mountable for efficient heat dissipation.

LOW CONDUCTION LOSS

ISOLATED

75 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

480 W

Not Qualified

UL RECOGNIZED

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

210 ns

43 ns

2.5 V

IKWH30N65WR5XKSA1 by Infineon Technologies

IKWH30N65WR5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 650 V;

75 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

190 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

416 ns

61 ns

1.7 V

MG1250H-XN2MM by Littelfuse

MG1250H-XN2MM

Littelfuse

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER; Transistor Element Material: SILICON;

ISOLATED

75 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X28

6

28

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

610 ns

140 ns

MG1250W-XBN2MM by Littelfuse

MG1250W-XBN2MM

Littelfuse

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; No. of Elements: 7; JESD-30 Code: R-XUFM-X24;

ISOLATED

75 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X24

7

24

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

140 ns

MG1750S-BN4MM by Littelfuse

MG1750S-BN4MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 1100 ns; JESD-30 Code: R-XUFM-X7;

ISOLATED

75 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

1100 ns

450 ns

F475R07W1H3B11ABOMA1 by Infineon Technologies

F475R07W1H3B11ABOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 275 W; Maximum Collector Current (IC): 75 A; Maximum Gate-Emitter Voltage: 20 V;

ISOLATED

75 A

650 V

COMPLEX

6.5 V

20 V

R-XUFM-X20

4

20

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

275 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

213 ns

32 ns

1.85 V

FS3L50R07W2H3B11BPSA1 by Infineon Technologies

FS3L50R07W2H3B11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn On Time (ton): 84 ns; JESD-30 Code: R-XUFM-X32;

ISOLATED

75 A

650 V

COMPLEX

R-XUFM-X32

12

32

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

346 ns

84 ns

FS3L50R07W2H3FB11BPSA1 by Infineon Technologies

FS3L50R07W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Style (Meter): FLANGE MOUNT; Transistor Application: POWER CONTROL;

ISOLATED

75 A

650 V

COMPLEX

R-XUFM-X32

12

32

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

346 ns

84 ns

F475R07W2H3B51BOMA1 by Infineon Technologies

F475R07W2H3B51BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Terminal Form: UNSPECIFIED; No. of Terminals: 28;

ISOLATED

75 A

650 V

COMPLEX

R-XUFM-X28

4

28

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

300 ns

45 ns

F475R07W2H3B51BPSA1 by Infineon Technologies

F475R07W2H3B51BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER;

ISOLATED

75 A

650 V

COMPLEX

6.5 V

20 V

R-XUFM-X18

4

18

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

300 ns

45 ns

1.55 V

A2P75S12M3-F by STMicroelectronics

A2P75S12M3-F

STMicroelectronics

A2P75S12M3-F by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 75A. It is commonly used for power control applications due to its high power dissipation capability and wide operating temperature range (-40°C to 150°C).

ISOLATED

75 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X33

6

33

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

454.4 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

517 ns

235 ns

2.3 V

A2P75S12M3 by STMicroelectronics

A2P75S12M3

STMicroelectronics

A2P75S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.3V, supports up to 75A collector current, and operates at temperatures from -40 °C to 150 °C. Its bridge configuration with 6 elements ensures efficient performance.

ISOLATED

75 A

1200 V

BRIDGE, 6 ELEMENTS

7 V

20 V

R-XUFM-X33

6

33

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

454.5 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

517 ns

235 ns

2.3 V

NXH80T120L3Q0S3G by Onsemi

NXH80T120L3Q0S3G

Onsemi

NXH80T120L3Q0S3G by Onsemi is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max VCEsat of 2.4V and can handle up to 75A of collector current. Ideal for power control applications, it operates at temperatures ranging from -40 °C to 150°C.

ISOLATED

75 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X20

4

20

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

188 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

750 ns

98 ns

2.4 V

FPF2G75FH07BP by Onsemi

FPF2G75FH07BP

Onsemi

FPF2G75FH07BP by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.2V, and IC of 75A. Ideal for POWER CONTROL applications, it has a toff of 462ns and ton of 124ns. Operating b/w -40 °C to 150°C, it offers a max VCE of 650V and Pabs of 236W in a RECTANGULAR package style.

LOW CONDUCTION LOSS

75 A

650 V

COMPLEX

6.8 V

25 V

R-XUFM-X32

6

32

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

236 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

462 ns

124 ns

2.2 V

SNXH75M65L3F2STG by Onsemi

SNXH75M65L3F2STG

Onsemi

SNXH75M65L3F2STG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 75A IC, and 236W power dissipation. Ideal for general purpose switching applications due to its built-in diode and thermistor. Features include a fast turn-off time of 432ns and a max operating temperature of 150 °C.

LOW SWITCHING LOSSES

ISOLATED

75 A

650 V

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

6.8 V

25 V

R-PUFM-P32

1

32

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

236 W

NO

PIN/PEG

UPPER

GENERAL PURPOSE SWITCHING

SILICON

432 ns

129 ns

2.2 V

IXGA48N60C3-TRL by Littelfuse

IXGA48N60C3-TRL

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 75 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

75 A

600 V

SINGLE

5.5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

300 W

YES

MATTE TIN

GULL WING

SINGLE

10

POWER CONTROL

SILICON

187 ns

45 ns

2.5 V

FS75R12KT4B15BPSA1 by Infineon Technologies

FS75R12KT4B15BPSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 75 A; No. of Terminals: 28;

ISOLATED

75 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

R-XUFM-X28

6

28

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

385 W

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

490 ns

185 ns

2.15 V