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WIDE BAND HIGH POWER RF & Microwave Amplifiers 65

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
CMPA0060002F by Wolfspeed

CMPA0060002F

Wolfspeed

Wolfspeed's CMPA0060002F is a wide band high power RF module with 13.5 dB gain, operating from 20 MHz to 6 GHz. It has a VSWR of 5 and operates b/w -40°C to 150°C. Ideal for RF & microwave applications requiring high power amplification in a compact form factor.

50 ohm

MODULE

13.5 dB

6000 MHz

20 MHz

150 Cel

-40 Cel

WIDE BAND HIGH POWER

5

CMPA2560025F by Wolfspeed

CMPA2560025F

Wolfspeed

Wolfspeed's CMPA2560025F is a wide band high power RF amplifier module with 19.5 dB gain, operating from 2500 to 6000 MHz. It has a max VSWR of 5 and features a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in the RF & Microwave domain.

50 ohm

MODULE

19.5 dB

6000 MHz

2500 MHz

WIDE BAND HIGH POWER

5

MAAP-010168-000000 by M/a-com Technology Solutions

MAAP-010168-000000

M/a-com Technology Solutions

MAAP-010168-000000 by M/a-com Technology Solutions is a wide band high power RF module with 19 dB gain, operating from 500 MHz to 3000 MHz. It can handle up to 24 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & Microwave applications requiring high power amplification.

HIGH RELIABILITY

50 ohm

MODULE

19 dB

24 dBm

3000 MHz

500 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

TRF7610PWP by Texas Instruments

TRF7610PWP

Texas Instruments

TRF7610PWP by Texas Instruments is a wide band high power RF amplifier with 30 dB gain, operating from 800 MHz to 1000 MHz. It can handle up to 13 dBm CW input power with VSWR of 6. Ideal for applications requiring high power amplification in RF and microwave systems.

COMPONENT

30 dB

13 dBm

1000 MHz

800 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

6

ALM-32220-BLKG by Broadcom

ALM-32220-BLKG

Broadcom

ALM-32220-BLKG by Broadcom is a GAAS module with 13.5 dB gain, operating from 1700 to 2700 MHz. With a max input power of 28 dBm, it's ideal for wideband high-power RF applications requiring a 50 ohm impedance and 5V supply voltage.

50 ohm

MODULE

13.5 dB

28 dBm

1

2700 MHz

1700 MHz

PLASTIC/EPOXY

MODULE(UNSPEC)

5

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

930 mA

GAAS

ALM-32220-TR1G by Broadcom

ALM-32220-TR1G

Broadcom

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm; Power Supplies (V): 5; Maximum Supply Current: 930 mA;

50 ohm

MODULE

13.5 dB

28 dBm

1

2700 MHz

1700 MHz

PLASTIC/EPOXY

MODULE(UNSPEC)

5

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

930 mA

GAAS

ALM-32220-TR2G by Broadcom

ALM-32220-TR2G

Broadcom

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5; Maximum Supply Current: 930 mA; Gain: 13.5 dB;

50 ohm

MODULE

13.5 dB

28 dBm

1

2700 MHz

1700 MHz

PLASTIC/EPOXY

MODULE(UNSPEC)

5

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

930 mA

GAAS

BGD502,112 by NXP Semiconductors

BGD502,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Maximum Operating Frequency: 550 MHz; Package Equivalence Code: SOT-115J;

LOW NOISE

75 ohm

MODULE

18.8 dB

16.25 dBm

e4

550 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

Gold (Au)

BGD702N,112 by NXP Semiconductors

BGD702N,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Maximum Supply Current: 435 mA; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

BGD704,112 by NXP Semiconductors

BGD704,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Temperature: -20 Cel; Maximum Supply Current: 435 mA; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

BGD714,112 by NXP Semiconductors

BGD714,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 410 mA; Gain: 20.8 dB; Maximum Operating Frequency: 750 MHz;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20.8 dB

e4

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

Gold (Au)

BGD802,112 by NXP Semiconductors

BGD802,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Minimum Operating Temperature: -20 Cel; Maximum Operating Frequency: 860 MHz;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

BGD804,112 by NXP Semiconductors

BGD804,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; JESD-609 Code: e4; Maximum Operating Frequency: 860 MHz; Characteristic Impedance: 75 ohm;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20 dB

e4

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

Gold (Au)

BGD812,112 by NXP Semiconductors

BGD812,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Minimum Operating Frequency: 40 MHz; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

19 dB

870 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

BGD814,112 by NXP Semiconductors

BGD814,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Characteristic Impedance: 75 ohm; Minimum Operating Frequency: 40 MHz; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20.5 dB

21.25 dBm

870 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

BGD816L,112 by NXP Semiconductors

BGD816L,112

NXP Semiconductors

WIDE BAND HIGH POWER; Technology: HYBRID; Additional Features: LOW NOISE, HIGH RELIABILITY; Maximum Operating Frequency: 870 MHz; Package Equivalence Code: SOT-115J; Maximum Supply Current: 375 mA;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

22 dB

1

870 MHz

40 MHz

100 Cel

-20 Cel

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

375 mA

HYBRID

BGD902,112 by NXP Semiconductors

BGD902,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 40 MHz; Power Supplies (V): 24; Maximum Supply Current: 435 mA;

LOW NOISE

75 ohm

COMPONENT

18.2 dB

16.25 dBm

900 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

BGD904,112 by NXP Semiconductors

BGD904,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Terminal Finish: Gold (Au); Maximum Input Power (CW): 21.25 dBm;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20.5 dB

21.25 dBm

e4

900 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

Gold (Au)

BGD906,112 by NXP Semiconductors

BGD906,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Terminal Finish: Gold (Au); JESD-609 Code: e4; Construction: MODULE;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

22 dB

e4

900 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

Gold (Au)

BGE788,112 by NXP Semiconductors

BGE788,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Frequency: 750 MHz; Power Supplies (V): 24; Minimum Operating Temperature: -20 Cel;

LOW NOISE

75 ohm

MODULE

34 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

320 mA

HYBRID

BGR269,112 by NXP Semiconductors

BGR269,112

NXP Semiconductors

The NXP Semiconductors BGR269,112 is a wide band high power RF amplifier module with 35 dB gain. Operating from 5 MHz to 200 MHz, it requires a 24V power supply and draws a max current of 175 mA. Ideal for applications requiring high-power amplification in the RF and microwave domain.

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

35 dB

1

200 MHz

5 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

175 mA

HYBRID

BGY1085A,112 by NXP Semiconductors

BGY1085A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Maximum Supply Current: 240 mA; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

1000 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

240 mA

HYBRID

BGY585A,112 by NXP Semiconductors

BGY585A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Frequency: 550 MHz; Maximum Supply Current: 240 mA; Package Equivalence Code: SOT-115J;

LOW NOISE

75 ohm

MODULE

18.8 dB

550 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

240 mA

HYBRID

BGY588N,112 by NXP Semiconductors

BGY588N,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Temperature: 100 Cel; Construction: MODULE; Maximum Operating Frequency: 550 MHz;

LOW NOISE

75 ohm

MODULE

35 dB

550 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

340 mA

HYBRID

BGY66B,112 by NXP Semiconductors

BGY66B,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Additional Features: LOW NOISE, HIGH RELIABILITY; Maximum Input Power (CW): 16.25 dBm;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

24.5 dB

16.25 dBm

120 MHz

5 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

135 mA

HYBRID

BGY67A,112 by NXP Semiconductors

BGY67A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Input Power (CW): 16.25 dBm; Package Equivalence Code: SOT-115J; Additional Features: LOW NOISE;

LOW NOISE

75 ohm

MODULE

23.5 dB

16.25 dBm

200 MHz

5 MHz

90 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

230 mA

HYBRID

BGY785A,112 by NXP Semiconductors

BGY785A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Characteristic Impedance: 75 ohm; Minimum Operating Temperature: -20 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

240 mA

HYBRID

BGY885A,112 by NXP Semiconductors

BGY885A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 40 MHz; Maximum Operating Temperature: 100 Cel; Maximum Supply Current: 240 mA;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

240 mA

HYBRID

BGY885B,112 by NXP Semiconductors

BGY885B,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 235 mA; Characteristic Impedance: 75 ohm; Terminal Finish: Gold (Au);

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20 dB

e4

1

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

235 mA

HYBRID

Gold (Au)

BGY887,112 by NXP Semiconductors

BGY887,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Maximum Supply Current: 235 mA; Package Equivalence Code: SOT-115J;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

21.5 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

235 mA

HYBRID

BGY887B,112 by NXP Semiconductors

BGY887B,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 40 MHz; Characteristic Impedance: 75 ohm; Maximum Operating Frequency: 860 MHz;

LOW NOISE

75 ohm

MODULE

29 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

340 mA

HYBRID

BGY888,112 by NXP Semiconductors

BGY888,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Characteristic Impedance: 75 ohm; Maximum Supply Current: 340 mA; Maximum Operating Frequency: 860 MHz;

LOW NOISE

75 ohm

MODULE

34 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

340 mA

HYBRID

CGD914,112 by NXP Semiconductors

CGD914,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; JESD-609 Code: e4; Package Equivalence Code: SOT-115J; Power Supplies (V): 24;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20.2 dB

19.75 dBm

e4

1

870 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

375 mA

HYBRID

Gold (Au)

CGD923,112 by NXP Semiconductors

CGD923,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Terminal Finish: GOLD; Minimum Operating Frequency: 40 MHz; Package Equivalence Code: SOT-115J;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

19.5 dB

e4

1

870 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

490 mA

HYBRID

GOLD

CGY887A,112 by NXP Semiconductors

CGY887A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 240 mA; Gain: 25.7 dB; Additional Features: LOW NOISE, HIGH RELIABILITY;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

25.7 dB

e4

870 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

240 mA

HYBRID

GOLD

CGY887B,112 by NXP Semiconductors

CGY887B,112

NXP Semiconductors

WIDE BAND HIGH POWER; Technology: HYBRID; Maximum Operating Temperature: 100 Cel; Construction: MODULE; No. of Functions: 1; Maximum Supply Current: 325 mA;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

28 dB

e4

1

870 MHz

40 MHz

100 Cel

-20 Cel

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

325 mA

HYBRID

GOLD

SKY65116-21 by Skyworks Solutions

SKY65116-21

Skyworks Solutions

SKY65116-21 by Skyworks Solutions is a RF & Microwave Amplifier with 35dB Gain, operating b/w 390-500MHz. It has a max supply current of 1300mA and operates at temperatures ranging from -40 to 85°C. Ideal for wideband high-power applications, it features a surface mounting feature and gold terminal finish.

HIGH RELIABILITY

50 ohm

COMPONENT

35 dB

e4

SURFACE MOUNT

1

12

500 MHz

390 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.32SQ,75/64

3.6

WIDE BAND HIGH POWER

1300 mA

BIPOLAR

Gold (Au)

HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC1114LP5DE by Analog Devices

HMC1114LP5DE

Analog Devices

HMC1114LP5DE by Analog Devices is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and operates at temperatures ranging from -40 °C to 85°C. Ideal for wideband high-power applications requiring a component construction with surface mounting feature.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC1087F10 by Analog Devices

HMC1087F10

Analog Devices

HMC1087F10 by Analog Devices is a GAN technology RF amplifier with 11dB gain, operating from 2-20GHz. It has a max input power of 34dBm and VSWR of 6, suitable for wideband high-power applications in RF & microwave systems. The ceramic package, surface mountable device operates b/w -40 to +85°C with a 28V supply.

50 ohm

COMPONENT

11 dB

34 dBm

SURFACE MOUNT

1

10

20000 MHz

2000 MHz

85 Cel

-40 Cel

CERAMIC

28

WIDE BAND HIGH POWER

GAN

6

HMC1099LP5DETR by Analog Devices

HMC1099LP5DETR

Analog Devices

HMC1099LP5DETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40 °C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC7748 by Analog Devices

HMC7748

Analog Devices

Analog Devices' HMC7748 is a wide band high power RF amplifier with 58 dB gain, operating from 2-6 GHz. It has a max input power of 8 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF & microwave systems. The component is constructed with plastic/epoxy package body material and can be surface mounted, making it versatile for various temperature environments.

50 ohm

COMPONENT

58 dB

8 dBm

SURFACE MOUNT

1

6

6000 MHz

2000 MHz

70 Cel

-40 Cel

PLASTIC/EPOXY

MODULE,6LEAD,2.9

12,28

WIDE BAND HIGH POWER

4000 mA

6

HMC1121LP6GETR by Analog Devices

HMC1121LP6GETR

Analog Devices

HMC1121LP6GETR by Analog Devices is a wide band high power RF amplifier with 25 dB gain and 50 ohm impedance. It operates b/w 5500-8500 MHz, handling up to 24 dBm CW input power. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40 to 85 °C.

50 ohm

COMPONENT

25 dB

24 dBm

e3

8500 MHz

5500 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

MATTE TIN

HMC1121LP6GE by Analog Devices

HMC1121LP6GE

Analog Devices

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

25 dB

24 dBm

e3

8500 MHz

5500 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

MATTE TIN

HMC1114LP5DETR by Analog Devices

HMC1114LP5DETR

Analog Devices

Analog Devices' HMC1114LP5DETR is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and requires a 28 V power supply, drawing up to 150 mA. This wideband high-power device is ideal for applications requiring surface mount construction in RF and microwave systems.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC8113 by Analog Devices

HMC8113

Analog Devices

Analog Devices' HMC8113 is a wide band high power RF module with 85 dB gain, operating from 2-6 GHz. It can handle up to 5 dBm CW input power and has a VSWR of 2. Ideal for RF & microwave applications requiring high power amplification in the temperature range of -10 °C to +50°C.

TTL COMPATIBLE

50 ohm

MODULE

85 dB

5 dBm

6000 MHz

2000 MHz

50 Cel

10 Cel

WIDE BAND HIGH POWER

2

HMC8114 by Analog Devices

HMC8114

Analog Devices

HMC8114 by Analog Devices is a wide band high power RF module with 53 dB gain, operating from 5800 MHz to 18000 MHz. It has a max input power of 5 dBm and VSWR of 2, suitable for RF & microwave applications requiring high power amplification in the temperature range of -20 °C to 64°C.

TTL COMPATIBLE

50 ohm

MODULE

53 dB

5 dBm

18000 MHz

5800 MHz

64 Cel

-20 Cel

WIDE BAND HIGH POWER

2

HMC7885FH18 by Analog Devices

HMC7885FH18

Analog Devices

Analog Devices' HMC7885FH18 is a wide band high power RF module with 21 dB gain, operating from 2-6 GHz. It can handle up to 36 dBm CW input power and has a VSWR of 2. Ideal for applications requiring high power amplification in the RF & Microwave domain.

50 ohm

MODULE

21 dB

36 dBm

6000 MHz

2000 MHz

60 Cel

-30 Cel

WIDE BAND HIGH POWER

2