Loading...

WIDE BAND HIGH POWER RF & Microwave Amplifiers 65

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
HMC8205BF10 by Analog Devices

HMC8205BF10

Analog Devices

Analog Devices' HMC8205BF10 is a wideband high-power RF amplifier with 25 dB gain and 35 dBm CW input power. Operating from 300 MHz to 6 GHz, it features a characteristic impedance of 50 ohms. Ideal for applications requiring high-power amplification in RF and microwave systems.

50 ohm

COMPONENT

25 dB

35 dBm

e4

6000 MHz

300 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

GOLD OVER NICKEL

PTMA080152MV1AUMA1 by Infineon Technologies

PTMA080152MV1AUMA1

Infineon Technologies

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.

50 ohm

COMPONENT

29 dB

42 dBm

e3

1000 MHz

700 MHz

WIDE BAND HIGH POWER

Tin (Sn)

10

HMC1099PM5ETR by Analog Devices

HMC1099PM5ETR

Analog Devices

HMC1099PM5ETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC1099PM5E by Analog Devices

HMC1099PM5E

Analog Devices

HMC1099PM5E by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in temperatures ranging from -40°C to 85°C. The component features a plastic/epoxy package body material and surface mounting feature.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC8500PM5ETR by Analog Devices

HMC8500PM5ETR

Analog Devices

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC8500PM5E by Analog Devices

HMC8500PM5E

Analog Devices

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

A2I09VD050GNR1 by NXP Semiconductors

A2I09VD050GNR1

NXP Semiconductors

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

12

960 MHz

575 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

48

WIDE BAND HIGH POWER

LDMOS

TIN

10

CMPA5259050F by Wolfspeed

CMPA5259050F

Wolfspeed

The Wolfspeed CMPA5259050F is a ceramic RF amplifier with 31dB gain, operating b/w 5200-5900 MHz. It features PHEMT technology, 50 ohm impedance, and can handle up to 28V power supplies. Ideal for wideband high-power applications requiring surface mounting in temperatures ranging from -40 to 105°C.

50 ohm

COMPONENT

31 dB

SURFACE MOUNT

1

6

5900 MHz

5200 MHz

105 Cel

-40 Cel

CERAMIC

28

WIDE BAND HIGH POWER

1000 mA

PHEMT

3

HMC8415LP6GETR by Analog Devices

HMC8415LP6GETR

Analog Devices

Analog Devices' HMC8415LP6GETR is a wideband high-power RF amplifier with 25.5 dB gain, operating from 9-10.5 GHz. It can handle up to 30 dBm CW input power and operates in temperatures ranging from -40 °C to 85°C. Ideal for RF and microwave applications requiring high power amplification in a compact component design.

50 ohm

COMPONENT

25.5 dB

30 dBm

e3

10500 MHz

9000 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

MATTE TIN

HMC8415LP6GE by Analog Devices

HMC8415LP6GE

Analog Devices

Analog Devices' HMC8415LP6GE is a wide band high power RF amplifier with 25.5 dB gain, operating from 9-10.5 GHz. It can handle up to 30 dBm CW input power and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high power amplification in a compact component form factor.

50 ohm

COMPONENT

25.5 dB

30 dBm

e3

10500 MHz

9000 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

MATTE TIN

HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC8205BCHIPS by Analog Devices

HMC8205BCHIPS

Analog Devices

Analog Devices' HMC8205BCHIPS is a wide band high power RF amplifier with 24.5 dB gain, operating from 400 MHz to 6 GHz. It can handle up to 35 dBm CW input power and operates in temperatures ranging from -55°C to 85°C. Ideal for RF & microwave applications requiring high power amplification.

50 ohm

COMPONENT

24.5 dB

35 dBm

6000 MHz

400 MHz

85 Cel

-55 Cel

WIDE BAND HIGH POWER

ADCA3992AMLZ by Analog Devices

ADCA3992AMLZ

Analog Devices

ADCA3992AMLZ by Analog Devices is a wide band high power RF module with 26.7 dB gain, operating from 45 MHz to 1218 MHz. It has a characteristic impedance of 75 ohm and requires a power supply of 34 V with max current draw of 550 mA. Ideal for applications requiring high-power amplification in RF and microwave systems.

75 ohm

MODULE

26.7 dB

PANEL MOUNT

1

8

1218 MHz

45 MHz

85 Cel

-30 Cel

SOT-115J

34

WIDE BAND HIGH POWER

550 mA

HYBRID

ADCA3952AMLZ by Analog Devices

ADCA3952AMLZ

Analog Devices

ADCA3952AMLZ by Analog Devices is a wide band high power RF amplifier with 25 dB gain and max input power of 75 dBm. Operating from 45 MHz to 1218 MHz, it has a construction as a module with PHEMT technology. Ideal for applications requiring high power amplification in RF and microwave systems.

75 ohm

MODULE

25 dB

75 dBm

PANEL MOUNT

1

8

1218 MHz

45 MHz

85 Cel

-30 Cel

24

WIDE BAND HIGH POWER

490 mA

PHEMT

ADCA3950AMLZ by Analog Devices

ADCA3950AMLZ

Analog Devices

ADCA3950AMLZ by Analog Devices is a wide band high power RF amplifier with 25 dB gain, operating from 45 MHz to 1218 MHz. It has a max input power of 75 dBm and operates on a 24V supply with a max current draw of 490 mA. Ideal for applications requiring high power amplification in RF and microwave systems.

75 ohm

MODULE

25 dB

75 dBm

PANEL MOUNT

1

7

1218 MHz

45 MHz

85 Cel

-30 Cel

24

WIDE BAND HIGH POWER

490 mA

PHEMT

ADPA1107ACPZN by Analog Devices

ADPA1107ACPZN

Analog Devices

ADPA1107ACPZN by Analog Devices is a GAN technology RF amplifier with 27dB gain, operating b/w 4800-6000MHz. It has a max input power of 31dBm and VSWR of 1.54, suitable for wideband high-power applications in RF & microwave systems.

50 ohm

COMPONENT

27 dB

31 dBm

SURFACE MOUNT

1

40

6000 MHz

4800 MHz

85 Cel

-40 Cel

LCC40,.24SQ,20

WIDE BAND HIGH POWER

GAN

1.54

ADPA1107ACPZN-R7 by Analog Devices

ADPA1107ACPZN-R7

Analog Devices

ADPA1107ACPZN-R7 by Analog Devices is a GAN technology RF amplifier with 27dB gain, 50 ohm impedance, and 31dBm CW input power. It operates b/w 4800-6000MHz, suitable for wideband high-power applications in RF & microwave systems.

50 ohm

COMPONENT

27 dB

31 dBm

SURFACE MOUNT

1

40

6000 MHz

4800 MHz

85 Cel

-40 Cel

LCC40,.24SQ,20

WIDE BAND HIGH POWER

GAN

1.54