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CGY887A,112

NXP Semiconductors

CGY887A,112 by NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 240 mA; Gain: 25.7 dB; Additional Features: LOW NOISE, HIGH RELIABILITY;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,400 parts In-Stock

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7,400

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Digiode

USA . 4,077 parts In-Stock

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4,077

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Anansix

USA . 1,500 parts In-Stock

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1,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 705 parts In-Stock

1+ parts

$0.601

100+ parts

-

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705

$0.601

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Northwest PG Solutions

USA . 402 parts In-Stock

1+ parts

$0.661

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402

$0.661

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Corohmni

South Africa . 259 parts In-Stock

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$1.054

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259

$1.054

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$3.024

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$2.994

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$2.873

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50

$3.024

$2.994

$2.873

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One Stop Electronics

USA . 962 parts In-Stock

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$17.000

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962

$17.000

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AZTECH Wire

Italy . 981 parts In-Stock

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$20.430

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981

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Microchip USA

USA . 4,453 parts In-Stock

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4,453

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Corphita

USA . 2,069 parts In-Stock

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2,069

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UNI Independent Distributors

Spain . 1,694 parts In-Stock

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1,694

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Technical Specifications

RF & Microwave Amplifiers CGY887A,112 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Characteristic Impedance:

75 ohm

Construction:

MODULE

Gain:

25.7 dB

JESD-609 Code:

e4

Maximum Operating Frequency:

870 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

SOT-115J

Power Supplies (V):

24

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

240 mA

Technology:

Terminal Finish:

GOLD

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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