Loading...

BGR269,112

NXP Semiconductors

BGR269,112 by NXP Semiconductors

The NXP Semiconductors BGR269,112 is a wide band high power RF amplifier module with 35 dB gain. Operating from 5 MHz to 200 MHz, it requires a 24V power supply and draws a max current of 175 mA. Ideal for applications requiring high-power amplification in the RF and microwave domain.

Median Price

$20.702

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,395 parts In-Stock

1+ parts

-

100+ parts

$17.880

1k+ parts

$16.000

10k+ parts

$15.060

2,395

-

$17.880

$16.000

$15.060

Verical

USA . 1,320 parts In-Stock

1+ parts

-

100+ parts

$23.525

1k+ parts

-

10k+ parts

-

1,320

-

$23.525

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,765 parts In-Stock

1+ parts

$18.914

100+ parts

-

1k+ parts

-

10k+ parts

-

3,765

$18.914

-

-

-

Vyrian

USA . 4,021 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,021

-

-

-

-

Anansix

USA . 1,605 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,605

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 653 parts In-Stock

1+ parts

$1.660

100+ parts

-

1k+ parts

-

10k+ parts

-

653

$1.660

-

-

-

Northwest PG Solutions

USA . 66 parts In-Stock

1+ parts

$1.826

100+ parts

-

1k+ parts

-

10k+ parts

-

66

$1.826

-

-

-

Corphita

USA . 3,430 parts In-Stock

1+ parts

$17.919

100+ parts

-

1k+ parts

-

10k+ parts

-

3,430

$17.919

-

-

-

AZTECH Wire

Italy . 787 parts In-Stock

1+ parts

$19.990

100+ parts

-

1k+ parts

-

10k+ parts

-

787

$19.990

-

-

-

Microchip USA

USA . 194 parts In-Stock

1+ parts

$39.900

100+ parts

$39.900

1k+ parts

$39.900

10k+ parts

$39.900

194

$39.900

$39.900

$39.900

$39.900

UNI Independent Distributors

Spain . 3,115 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,115

-

-

-

-

Overview

Unlock the power of cutting-edge technology with the BGR269,112 by NXP Semiconductors. As a leader in RF & Microwave Amplifiers, NXP ensures top-notch quality and reliability in every product. This wide band high power amplifier offers a gain of 35 dB, making it perfect for a variety of applications. From communications to industrial settings, this module is designed to deliver exceptional performance at temperatures ranging from -20°C to 100°C. Invest in innovation with the BGR269,112 and experience unparalleled value and benefits for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the amplifier, increasing its lifespan and reliability.

Power Supplies (V): 24

Operates on a standard voltage, making it compatible with most power sources.

Maximum Operating Temperature: 100 °C

Can operate in high temperature environments without risk of damage or malfunction.

Minimum Operating Temperature: -20 °C

Can operate in low temperature environments without risk of damage or malfunction.

Technology: HYBRID

Utilizes a combination of different technologies to deliver high performance and efficiency.

RF or Microwave Device Type: WIDE BAND HIGH POWER

Designed to amplify wide band signals at high power levels, making it suitable for a variety of applications.

Characteristic Impedance: 75 ohm

Matches the impedance of standard transmission lines, ensuring seamless integration into existing RF systems.

Gain: 35 dB

Provides a high level of signal amplification, improving the overall performance of the amplifier.

Minimum Operating Frequency: 5 MHz

Can amplify signals at low frequencies, making it versatile for a wide range of applications.

Maximum Operating Frequency: 200 MHz

Can amplify signals at high frequencies, making it ideal for RF and microwave communication systems.

Technical Specifications

RF & Microwave Amplifiers BGR269,112 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Characteristic Impedance:

75 ohm

Construction:

MODULE

Gain:

35 dB

No. of Functions:

1

Maximum Operating Frequency:

200 MHz

Minimum Operating Frequency:

5 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

SOT-115J

Power Supplies (V):

24

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

175 mA

Technology:

Trade Compliance

BGR269,112 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1