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BGD906,112

NXP Semiconductors

BGD906,112 by NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Terminal Finish: Gold (Au); JESD-609 Code: e4; Construction: MODULE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,108 parts In-Stock

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6,108

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Digiode

USA . 2,141 parts In-Stock

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2,141

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Anansix

USA . 1,177 parts In-Stock

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1,177

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 456 parts In-Stock

1+ parts

$0.664

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-

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456

$0.664

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Northwest PG Solutions

USA . 1,877 parts In-Stock

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$0.731

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1,877

$0.731

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.849

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$1.683

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$1.516

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2,500

$1.849

$1.683

$1.516

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Corohmni

South Africa . 281 parts In-Stock

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$2.638

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281

$2.638

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Microchip USA

USA . 271 parts In-Stock

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$4.878

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271

$4.878

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AZTECH Wire

Italy . 977 parts In-Stock

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$15.930

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One Stop Electronics

USA . 331 parts In-Stock

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$34.000

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UNI Independent Distributors

Spain . 2,787 parts In-Stock

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Corphita

USA . 1,078 parts In-Stock

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Technical Specifications

RF & Microwave Amplifiers BGD906,112 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Characteristic Impedance:

75 ohm

Construction:

MODULE

Gain:

22 dB

JESD-609 Code:

e4

Maximum Operating Frequency:

900 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

SOT-115J

Power Supplies (V):

24

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

435 mA

Technology:

Terminal Finish:

Gold (Au)

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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