Loading...

BGD902MI

NXP Semiconductors

BGD902MI by NXP Semiconductors

WIDE BAND HIGH POWER; Maximum Operating Temperature: 100 Cel; Construction: MODULE; Gain: 19 dB; Characteristic Impedance: 75 ohm; Additional Features: LOW NOISE, HIGH RELIABILITY;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,876 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,876

-

-

-

-

Digiode

USA . 2,886 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,886

-

-

-

-

Anansix

USA . 1,237 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,237

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 535 parts In-Stock

1+ parts

$0.174

100+ parts

-

1k+ parts

-

10k+ parts

$0.167

535

$0.174

-

-

$0.167

Northwest PG Solutions

USA . 608 parts In-Stock

1+ parts

$0.191

100+ parts

-

1k+ parts

-

10k+ parts

$0.169

608

$0.191

-

-

$0.169

One Stop Electronics

USA . 1,106 parts In-Stock

1+ parts

$14.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,106

$14.000

-

-

-

UNI Independent Distributors

Spain . 6,655 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,655

-

-

-

-

Corphita

USA . 395 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

395

-

-

-

-

Technical Specifications

RF & Microwave Amplifiers BGD902MI attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Characteristic Impedance:

75 ohm

Construction:

MODULE

Gain:

19 dB

Maximum Operating Frequency:

900 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

RF or Microwave Device Type:

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 13